JP4481632B2 - 薄膜集積回路 - Google Patents

薄膜集積回路 Download PDF

Info

Publication number
JP4481632B2
JP4481632B2 JP2003423840A JP2003423840A JP4481632B2 JP 4481632 B2 JP4481632 B2 JP 4481632B2 JP 2003423840 A JP2003423840 A JP 2003423840A JP 2003423840 A JP2003423840 A JP 2003423840A JP 4481632 B2 JP4481632 B2 JP 4481632B2
Authority
JP
Japan
Prior art keywords
thin film
integrated circuit
electrically connected
chip
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003423840A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005182551A5 (enExample
JP2005182551A (ja
Inventor
清 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003423840A priority Critical patent/JP4481632B2/ja
Publication of JP2005182551A publication Critical patent/JP2005182551A/ja
Publication of JP2005182551A5 publication Critical patent/JP2005182551A5/ja
Application granted granted Critical
Publication of JP4481632B2 publication Critical patent/JP4481632B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2003423840A 2003-12-19 2003-12-19 薄膜集積回路 Expired - Fee Related JP4481632B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003423840A JP4481632B2 (ja) 2003-12-19 2003-12-19 薄膜集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003423840A JP4481632B2 (ja) 2003-12-19 2003-12-19 薄膜集積回路

Publications (3)

Publication Number Publication Date
JP2005182551A JP2005182551A (ja) 2005-07-07
JP2005182551A5 JP2005182551A5 (enExample) 2007-02-08
JP4481632B2 true JP4481632B2 (ja) 2010-06-16

Family

ID=34784211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003423840A Expired - Fee Related JP4481632B2 (ja) 2003-12-19 2003-12-19 薄膜集積回路

Country Status (1)

Country Link
JP (1) JP4481632B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120039764A (ko) 2004-07-14 2012-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 무선 프로세서, 무선 메모리, 정보 처리 시스템
JP5303096B2 (ja) * 2004-07-14 2013-10-02 株式会社半導体エネルギー研究所 プロセッサ
US20070126556A1 (en) * 2005-12-07 2007-06-07 Kovio, Inc. Printed radio frequency identification (RFID) tag using tags-talk-first (TTF) protocol
JP2007201437A (ja) * 2005-12-27 2007-08-09 Semiconductor Energy Lab Co Ltd 半導体装置
JP2007226578A (ja) * 2006-02-23 2007-09-06 Chugoku Electric Power Co Inc:The 計量器用表示装置及び計量器並びに計量器検針用ユニット
JP2007294082A (ja) * 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd Ｎａｎｄ型不揮発性メモリのデータ消去方法
US7554854B2 (en) 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
KR100843887B1 (ko) * 2006-06-02 2008-07-03 주식회사 하이닉스반도체 집적회로 및 그 정보 기록 방법
FR2906078B1 (fr) * 2006-09-19 2009-02-13 Commissariat Energie Atomique Procede de fabrication d'une structure micro-technologique mixte et une structure ainsi obtenue
US9814387B2 (en) * 2013-06-28 2017-11-14 Verily Life Sciences, LLC Device identification

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007290A (ja) * 1999-06-24 2001-01-12 Mitsubishi Electric Corp 半導体装置、半導体装置の製造方法、および、通信方法
JP2003203994A (ja) * 2001-10-22 2003-07-18 Mitsubishi Electric Corp 半導体装置、ロボット、宝籤の運営方法、記録媒体、ソフトウェアの供給方法、電子透かし方法、被認識物の認識方法、位置検出方法、データベース、位置情報提供方法、並びに環境状況送信装置
JP4159779B2 (ja) * 2001-12-28 2008-10-01 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP2003288573A (ja) * 2002-03-27 2003-10-10 Seiko Epson Corp Ｉｃカード及びその製造方法

Also Published As

Publication number Publication date
JP2005182551A (ja) 2005-07-07

Similar Documents

Publication Publication Date Title
KR101298962B1 (ko) 반도체 장치 및 반도체 장치를 제조하는 방법
CN100507941C (zh) 半导体器件及其驱动方法
JP4536496B2 (ja) 半導体装置及び半導体装置の駆動方法
US7968427B2 (en) Manufacturing method of semiconductor device
US7808098B2 (en) Semiconductor device and manufacturing method thereof
JP4860160B2 (ja) 半導体装置
US20110220725A1 (en) Semiconductor device
TW201320313A (zh) 薄膜積體電路，積體電路標籤，包含薄膜積體電路之容器，薄膜積體電路裝置之製造方法，該容器之製造方法，以及製造具有該容器之產品的方法
JP4481632B2 (ja) 薄膜集積回路
JP4776941B2 (ja) 半導体装置の製造方法、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ及び衣類
KR20060041894A (ko) 반도체 디바이스, ｉｃ카드, ｉｃ 태그, ｒｆｉｄ, 트랜스폰더, 지폐, 유가 증권, 여권, 전자 기기, 가방 및 의복
JP4718850B2 (ja) 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ及び衣類
JP2005203763A (ja) 半導体集積回路、並びに半導体装置、及び該半導体集積回路の作製方法
KR101205195B1 (ko) 반도체 장치
JP4836466B2 (ja) 半導体装置
CN101140796B (zh) 半导体装置
JP5121119B2 (ja) チップ搭載物
JP4624093B2 (ja) 半導体装置及びｉｄタグ
JP5296349B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061215

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061215

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090703

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090707

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090807

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100316

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100318

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130326

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130326

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130326

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140326

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees