JP2006012382A5 - - Google Patents

Download PDF

Info

Publication number
JP2006012382A5
JP2006012382A5 JP2005062063A JP2005062063A JP2006012382A5 JP 2006012382 A5 JP2006012382 A5 JP 2006012382A5 JP 2005062063 A JP2005062063 A JP 2005062063A JP 2005062063 A JP2005062063 A JP 2005062063A JP 2006012382 A5 JP2006012382 A5 JP 2006012382A5
Authority
JP
Japan
Prior art keywords
channel
field effect
effect transistor
semiconductor substrate
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005062063A
Other languages
English (en)
Japanese (ja)
Other versions
JP4664707B2 (ja
JP2006012382A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005062063A external-priority patent/JP4664707B2/ja
Priority to JP2005062063A priority Critical patent/JP4664707B2/ja
Priority to TW094114586A priority patent/TWI390535B/zh
Priority to KR1020050043978A priority patent/KR101064765B1/ko
Priority to US11/137,518 priority patent/US7212444B2/en
Priority to CN2010101130343A priority patent/CN101847437B/zh
Priority to CN200510074348A priority patent/CN100595923C/zh
Publication of JP2006012382A publication Critical patent/JP2006012382A/ja
Priority to US11/727,592 priority patent/US7443731B2/en
Publication of JP2006012382A5 publication Critical patent/JP2006012382A5/ja
Priority to US12/233,670 priority patent/US7751255B2/en
Priority to US12/787,158 priority patent/US8064261B2/en
Publication of JP4664707B2 publication Critical patent/JP4664707B2/ja
Application granted granted Critical
Priority to US13/269,425 priority patent/US8472258B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2005062063A 2004-05-27 2005-03-07 半導体記憶装置 Expired - Lifetime JP4664707B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2005062063A JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置
TW094114586A TWI390535B (zh) 2004-05-27 2005-05-05 半導體記憶裝置
KR1020050043978A KR101064765B1 (ko) 2004-05-27 2005-05-25 반도체 기억 장치
US11/137,518 US7212444B2 (en) 2004-05-27 2005-05-26 Semiconductor nonvolatile memory device
CN2010101130343A CN101847437B (zh) 2004-05-27 2005-05-27 半导体存储器件的操作方法
CN200510074348A CN100595923C (zh) 2004-05-27 2005-05-27 集成半导体非易失性存储器的控制方法
US11/727,592 US7443731B2 (en) 2004-05-27 2007-03-27 Semiconductor nonvolatile memory device
US12/233,670 US7751255B2 (en) 2004-05-27 2008-09-19 Semiconductor nonvolatile memory device
US12/787,158 US8064261B2 (en) 2004-05-27 2010-05-25 Semiconductor nonvolatile memory device
US13/269,425 US8472258B2 (en) 2004-05-27 2011-10-07 Semiconductor nonvolatile memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004157209 2004-05-27
JP2005062063A JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008000095A Division JP2008153678A (ja) 2004-05-27 2008-01-04 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2006012382A JP2006012382A (ja) 2006-01-12
JP2006012382A5 true JP2006012382A5 (enExample) 2008-02-21
JP4664707B2 JP4664707B2 (ja) 2011-04-06

Family

ID=35425012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005062063A Expired - Lifetime JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置

Country Status (5)

Country Link
US (5) US7212444B2 (enExample)
JP (1) JP4664707B2 (enExample)
KR (1) KR101064765B1 (enExample)
CN (1) CN101847437B (enExample)
TW (1) TWI390535B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4664707B2 (ja) 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5038741B2 (ja) * 2007-02-27 2012-10-03 ルネサスエレクトロニクス株式会社 不揮発性メモリ用電圧生成回路及び不揮発性メモリの書込み及び消去の方法
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN101652816B (zh) * 2007-04-05 2013-10-09 Nxp股份有限公司 存储器单元、存储器阵列和对存储器单元进行编程的方法
JP2008270343A (ja) * 2007-04-17 2008-11-06 Renesas Technology Corp 不揮発性半導体記憶装置
KR101401558B1 (ko) 2007-08-20 2014-06-09 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 및 소거 방법들,그리고 그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8565019B2 (en) * 2007-11-20 2013-10-22 Kabushiki Kaisha Toshiba Method for controlling threshold value in nonvolatile semiconductor memory device
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
JP5422886B2 (ja) * 2007-12-25 2014-02-19 凸版印刷株式会社 半導体装置
JP5365028B2 (ja) * 2008-03-03 2013-12-11 富士通セミコンダクター株式会社 半導体記憶装置
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
JP2010267341A (ja) * 2009-05-15 2010-11-25 Renesas Electronics Corp 半導体装置
JP5316299B2 (ja) * 2009-08-07 2013-10-16 富士通セミコンダクター株式会社 半導体メモリ、システムおよび半導体メモリの動作方法
JP2011076685A (ja) * 2009-10-01 2011-04-14 Fujitsu Semiconductor Ltd 不揮発性半導体記憶装置及びその書き込み方法
JP2011210969A (ja) 2010-03-30 2011-10-20 Renesas Electronics Corp 半導体装置およびその製造方法
KR101177215B1 (ko) 2010-10-26 2012-08-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
EP2498258B1 (en) * 2011-03-11 2016-01-13 eMemory Technology Inc. Non-volatile memory device with program current clamp and related method
US9894501B2 (en) * 2012-03-30 2018-02-13 Arris Enterprises Llc Handover of on-hold session between fixed packet network and cellular network
US9378821B1 (en) 2013-01-18 2016-06-28 Cypress Semiconductor Corporation Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
JP5596822B2 (ja) * 2013-06-18 2014-09-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN103700399A (zh) * 2014-01-07 2014-04-02 上海华虹宏力半导体制造有限公司 闪存及对应的编程方法、读取方法和擦除方法
WO2016133753A1 (en) * 2015-02-20 2016-08-25 Magna International Inc. Vehicle twist axle assembly
WO2016164229A1 (en) * 2015-04-09 2016-10-13 Silicon Storage Technology, Inc. System and method for programming split-gate, non-volatile memory cells
CN106158027B (zh) * 2015-04-09 2020-02-07 硅存储技术公司 用于对分离栅式非易失性存储器单元编程的系统和方法
JP2018049674A (ja) 2016-09-21 2018-03-29 ルネサスエレクトロニクス株式会社 半導体装置
TWI733626B (zh) * 2020-07-07 2021-07-11 旺宏電子股份有限公司 記憶體裝置之操作方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7A (en) * 1836-08-10 Thomas Blanchard Machine for boring holes and cutting lanyard-scores in deadeyes
US4799207A (en) * 1985-08-14 1989-01-17 Staar, S.A. Apparatus and method for maintaining progression of recovery of recorded information
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
JP3626221B2 (ja) * 1993-12-13 2005-03-02 株式会社東芝 不揮発性半導体記憶装置
US5914896A (en) * 1996-08-01 1999-06-22 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices
US5969383A (en) 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
JPH1187658A (ja) 1997-09-05 1999-03-30 Mitsubishi Electric Corp メモリセルおよびそれを備える不揮発性半導体記憶装置
FR2770326B1 (fr) * 1997-10-28 2001-12-28 Sgs Thomson Microelectronics Procede d'ecriture dans une memoire non volatile modifiable electriquement
US6215148B1 (en) 1998-05-20 2001-04-10 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
KR100290474B1 (ko) * 1998-06-11 2001-06-01 박종섭 다단계 펄스 발생 회로 및 이를 이용한 플래쉬 메모리 셀의소거 방법
JP2000251485A (ja) * 1999-02-26 2000-09-14 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
JP2002109890A (ja) * 2000-10-03 2002-04-12 Hitachi Ltd 不揮発性半導体メモリ
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
US6958940B2 (en) * 2002-02-28 2005-10-25 Renesas Technology Corp. Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array
JP2003346484A (ja) * 2002-05-23 2003-12-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2004023044A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 不揮発性半導体記憶装置
US6894931B2 (en) 2002-06-20 2005-05-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP2004071094A (ja) * 2002-08-08 2004-03-04 Renesas Technology Corp 不揮発性半導体記憶装置
JP4601287B2 (ja) 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7035147B2 (en) * 2003-06-17 2006-04-25 Macronix International Co., Ltd. Overerase protection of memory cells for nonvolatile memory
US7187590B2 (en) * 2004-04-26 2007-03-06 Macronix International Co., Ltd. Method and system for self-convergent erase in charge trapping memory cells
US7313649B2 (en) * 2004-04-28 2007-12-25 Matsushita Electric Industrial Co., Ltd. Flash memory and program verify method for flash memory
JP4664707B2 (ja) * 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置

Similar Documents

Publication Publication Date Title
JP2006012382A5 (enExample)
TWI531049B (zh) 反及快閃記憶體及其熱載子生成和寫入方法
CN103514952B (zh) Nand闪存及对其施加偏压的方法
TWI387968B (zh) 記憶體中記憶胞的程式化方法以及利用此方法的記憶體裝置
US20110080768A1 (en) Write current compensation using word line boosting circuitry
JP2009033177A5 (enExample)
US9818484B2 (en) Systems, methods, and apparatus for memory cells with common source lines
JP2011187940A5 (enExample)
JP2012079399A5 (enExample)
JP2004221554A5 (enExample)
JP2011135065A5 (enExample)
JP2011129893A5 (enExample)
JP2011192982A5 (ja) 半導体メモリ装置及び半導体メモリ装置の駆動方法
JP2005183619A5 (enExample)
JP2012064753A (ja) 不揮発性半導体記憶装置
TWI384483B (zh) 矽－氧化物－氮化物－氧化物－矽（ｓｏｎｏｓ）型反及閘快閃記憶體及其高效能抹除法
US10818685B2 (en) Non-volatile memory with pool capacitor
JP5281455B2 (ja) 不揮発性半導体記憶装置及びその駆動方法
JP2009080922A5 (enExample)
US20090147580A1 (en) One-transistor floating-body dram cell device with non-volatile function
JP2006060030A5 (enExample)
JPWO2019145814A5 (ja) 半導体装置および記憶装置
JP2013012724A5 (enExample)
KR101385735B1 (ko) 강유전체 메모리 소자 및 그 제조 방법
TWI489465B (zh) 使用兩階段源極端偏壓進行反及閘快閃記憶體之低電壓程式化