JP2006060030A5 - - Google Patents

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Publication number
JP2006060030A5
JP2006060030A5 JP2004240594A JP2004240594A JP2006060030A5 JP 2006060030 A5 JP2006060030 A5 JP 2006060030A5 JP 2004240594 A JP2004240594 A JP 2004240594A JP 2004240594 A JP2004240594 A JP 2004240594A JP 2006060030 A5 JP2006060030 A5 JP 2006060030A5
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JP
Japan
Prior art keywords
electrode
semiconductor substrate
charge storage
charge
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004240594A
Other languages
English (en)
Japanese (ja)
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JP2006060030A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004240594A priority Critical patent/JP2006060030A/ja
Priority claimed from JP2004240594A external-priority patent/JP2006060030A/ja
Priority to TW094123603A priority patent/TW200617969A/zh
Priority to US11/197,485 priority patent/US7184318B2/en
Publication of JP2006060030A publication Critical patent/JP2006060030A/ja
Priority to US11/652,023 priority patent/US7471563B2/en
Publication of JP2006060030A5 publication Critical patent/JP2006060030A5/ja
Withdrawn legal-status Critical Current

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JP2004240594A 2004-08-20 2004-08-20 半導体記憶装置 Withdrawn JP2006060030A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004240594A JP2006060030A (ja) 2004-08-20 2004-08-20 半導体記憶装置
TW094123603A TW200617969A (en) 2004-08-20 2005-07-12 Semiconductor memory device
US11/197,485 US7184318B2 (en) 2004-08-20 2005-08-05 Semiconductor memory device
US11/652,023 US7471563B2 (en) 2004-08-20 2007-01-11 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004240594A JP2006060030A (ja) 2004-08-20 2004-08-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2006060030A JP2006060030A (ja) 2006-03-02
JP2006060030A5 true JP2006060030A5 (enExample) 2007-05-10

Family

ID=35909435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004240594A Withdrawn JP2006060030A (ja) 2004-08-20 2004-08-20 半導体記憶装置

Country Status (3)

Country Link
US (2) US7184318B2 (enExample)
JP (1) JP2006060030A (enExample)
TW (1) TW200617969A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101091252B (zh) * 2004-12-28 2012-09-05 斯班逊有限公司 半导体装置以及控制半导体装置操作的方法
US7345917B2 (en) * 2005-12-05 2008-03-18 Macronix International Co., Ltd. Non-volatile memory package and method of reading stored data from a non-volatile memory array
US7463525B2 (en) * 2006-12-22 2008-12-09 Spansion Llc Negative wordline bias for reduction of leakage current during flash memory operation
KR100871606B1 (ko) 2007-06-18 2008-12-02 삼성전자주식회사 비휘발성 메모리 소자의 프로그래밍 방법 및 이를 이용한낸드 플래시 메모리 소자의 구동 방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8072072B2 (en) * 2007-09-20 2011-12-06 Qimonda Ag Integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit
US7619933B2 (en) * 2007-10-05 2009-11-17 Micron Technology, Inc. Reducing effects of program disturb in a memory device
US8355278B2 (en) 2007-10-05 2013-01-15 Micron Technology, Inc. Reducing effects of program disturb in a memory device
US20100277456A1 (en) * 2007-12-13 2010-11-04 Bridgestone Corporation Information display panel driving method and information display panel
US7672175B2 (en) * 2008-01-11 2010-03-02 Qualcomm Incorporated System and method of selectively applying negative voltage to wordlines during memory device read operation
US9461055B2 (en) * 2014-05-16 2016-10-04 Qualcomm Incorporated Advanced metal-nitride-oxide-silicon multiple-time programmable memory
JP6783447B2 (ja) * 2016-04-20 2020-11-11 株式会社フローディア 不揮発性半導体記憶装置のデータ書き込み方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3378879B2 (ja) * 1997-12-10 2003-02-17 松下電器産業株式会社 不揮発性半導体記憶装置及びその駆動方法
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
JP4058219B2 (ja) 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
JP3829088B2 (ja) * 2001-03-29 2006-10-04 株式会社東芝 半導体記憶装置
US6754105B1 (en) * 2003-05-06 2004-06-22 Advanced Micro Devices, Inc. Trench side wall charge trapping dielectric flash memory device
US7049651B2 (en) * 2003-11-17 2006-05-23 Infineon Technologies Ag Charge-trapping memory device including high permittivity strips
JP2005223234A (ja) * 2004-02-09 2005-08-18 Renesas Technology Corp 半導体記憶装置およびその製造方法

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