JP2006080247A5 - - Google Patents

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Publication number
JP2006080247A5
JP2006080247A5 JP2004261751A JP2004261751A JP2006080247A5 JP 2006080247 A5 JP2006080247 A5 JP 2006080247A5 JP 2004261751 A JP2004261751 A JP 2004261751A JP 2004261751 A JP2004261751 A JP 2004261751A JP 2006080247 A5 JP2006080247 A5 JP 2006080247A5
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JP
Japan
Prior art keywords
semiconductor device
misfet
gate electrode
well
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004261751A
Other languages
English (en)
Japanese (ja)
Other versions
JP4881552B2 (ja
JP2006080247A (ja
Filing date
Publication date
Priority claimed from JP2004261751A external-priority patent/JP4881552B2/ja
Priority to JP2004261751A priority Critical patent/JP4881552B2/ja
Application filed filed Critical
Priority to TW094116894A priority patent/TWI424532B/zh
Priority to US11/206,968 priority patent/US7313026B2/en
Priority to KR1020050076135A priority patent/KR101067093B1/ko
Publication of JP2006080247A publication Critical patent/JP2006080247A/ja
Publication of JP2006080247A5 publication Critical patent/JP2006080247A5/ja
Priority to US11/925,106 priority patent/US7466599B2/en
Priority to US12/270,346 priority patent/US20090154253A1/en
Publication of JP4881552B2 publication Critical patent/JP4881552B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004261751A 2004-09-09 2004-09-09 半導体装置 Expired - Fee Related JP4881552B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004261751A JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置
TW094116894A TWI424532B (zh) 2004-09-09 2005-05-24 半導體裝置
US11/206,968 US7313026B2 (en) 2004-09-09 2005-08-19 Semiconductor device
KR1020050076135A KR101067093B1 (ko) 2004-09-09 2005-08-19 반도체 장치
US11/925,106 US7466599B2 (en) 2004-09-09 2007-10-26 Semiconductor device
US12/270,346 US20090154253A1 (en) 2004-09-09 2008-11-13 semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004261751A JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2006080247A JP2006080247A (ja) 2006-03-23
JP2006080247A5 true JP2006080247A5 (enExample) 2007-10-18
JP4881552B2 JP4881552B2 (ja) 2012-02-22

Family

ID=35996040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004261751A Expired - Fee Related JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置

Country Status (4)

Country Link
US (3) US7313026B2 (enExample)
JP (1) JP4881552B2 (enExample)
KR (1) KR101067093B1 (enExample)
TW (1) TWI424532B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
JP4800109B2 (ja) * 2005-09-13 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2007123830A (ja) * 2005-09-29 2007-05-17 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
KR100735753B1 (ko) * 2005-10-04 2007-07-06 삼성전자주식회사 공유된 비트라인을 갖는 플래쉬 메모리 소자 및 그의제조방법
JP4901325B2 (ja) 2006-06-22 2012-03-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5228195B2 (ja) * 2007-04-20 2013-07-03 インターチップ株式会社 不揮発性メモリ内蔵シフトレジスタ
US8072035B2 (en) 2007-06-11 2011-12-06 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP5280716B2 (ja) * 2007-06-11 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI358067B (en) * 2007-12-19 2012-02-11 Powerchip Technology Corp Integrated circuits and discharge circuits
US7639536B2 (en) * 2008-03-07 2009-12-29 United Microelectronics Corp. Storage unit of single-conductor non-volatile memory cell and method of erasing the same
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2010087357A (ja) * 2008-10-01 2010-04-15 Toshiba Corp 不揮発性半導体記憶装置
US10046141B2 (en) 2008-12-30 2018-08-14 Biosense Webster, Inc. Deflectable sheath introducer
KR20110047819A (ko) * 2009-10-30 2011-05-09 주식회사 하이닉스반도체 반도체 장치의 단위 블록 회로
CA2789440C (en) * 2010-03-10 2020-03-24 Probiodrug Ag Heterocyclic inhibitors of glutaminyl cyclase (qc, ec 2.3.2.5)
US8958245B2 (en) 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
US9042174B2 (en) 2010-06-17 2015-05-26 Ememory Technology Inc. Non-volatile memory cell
JP5705053B2 (ja) * 2011-07-26 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2013102119A (ja) * 2011-11-07 2013-05-23 Ememory Technology Inc 不揮発性メモリーセル
US9361982B2 (en) * 2014-02-04 2016-06-07 Stmicroelectronics S.R.L. Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
US20250063728A1 (en) * 2023-08-15 2025-02-20 Ememory Technology Inc. Antifuse-type one time programming memory and associated bias voltage control method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3083547B2 (ja) 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
DE4311358C2 (de) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
JPH07240473A (ja) * 1994-03-01 1995-09-12 Fujitsu Ltd 半導体記憶装置およびその製造方法
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5892709A (en) * 1997-05-09 1999-04-06 Motorola, Inc. Single level gate nonvolatile memory device and method for accessing the same
JP4212178B2 (ja) * 1999-03-12 2009-01-21 株式会社東芝 半導体集積回路の製造方法
JP2002541669A (ja) * 1999-03-31 2002-12-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性メモリセルを有する半導体デバイス
JP2001185633A (ja) * 1999-12-15 2001-07-06 Texas Instr Inc <Ti> Ｅｅｐｒｏｍデバイス
JP4072300B2 (ja) 1999-12-22 2008-04-09 日本特殊陶業株式会社 セラミック積層構造の配線基板
JP4530464B2 (ja) * 2000-03-09 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
US6788574B1 (en) * 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell
FR2838554B1 (fr) * 2002-04-15 2004-07-09 St Microelectronics Sa Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
CN1669155A (zh) 2002-05-09 2005-09-14 伊皮杰有限公司 伪非易失性直接隧穿浮栅器件
JP3957561B2 (ja) * 2002-05-24 2007-08-15 株式会社リコー 半導体装置
JP4601287B2 (ja) * 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム

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