JP2004297048A5 - - Google Patents

Download PDF

Info

Publication number
JP2004297048A5
JP2004297048A5 JP2004063307A JP2004063307A JP2004297048A5 JP 2004297048 A5 JP2004297048 A5 JP 2004297048A5 JP 2004063307 A JP2004063307 A JP 2004063307A JP 2004063307 A JP2004063307 A JP 2004063307A JP 2004297048 A5 JP2004297048 A5 JP 2004297048A5
Authority
JP
Japan
Prior art keywords
electrode
active layer
thin film
film transistor
channel formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004063307A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004297048A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004063307A priority Critical patent/JP2004297048A/ja
Priority claimed from JP2004063307A external-priority patent/JP2004297048A/ja
Publication of JP2004297048A publication Critical patent/JP2004297048A/ja
Publication of JP2004297048A5 publication Critical patent/JP2004297048A5/ja
Withdrawn legal-status Critical Current

Links

JP2004063307A 2003-03-11 2004-03-08 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法 Withdrawn JP2004297048A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004063307A JP2004297048A (ja) 2003-03-11 2004-03-08 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003065314 2003-03-11
JP2003065393 2003-03-11
JP2004063307A JP2004297048A (ja) 2003-03-11 2004-03-08 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011072882A Division JP2011205103A (ja) 2003-03-11 2011-03-29 半導体表示装置

Publications (2)

Publication Number Publication Date
JP2004297048A JP2004297048A (ja) 2004-10-21
JP2004297048A5 true JP2004297048A5 (enExample) 2007-04-19

Family

ID=33424763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004063307A Withdrawn JP2004297048A (ja) 2003-03-11 2004-03-08 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法

Country Status (1)

Country Link
JP (1) JP2004297048A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040228168A1 (en) * 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
WO2006085633A1 (en) * 2005-02-10 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
JP4967264B2 (ja) * 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
JP2007194267A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 半導体記憶装置
CN104576748B (zh) 2009-06-30 2019-03-15 株式会社半导体能源研究所 半导体装置的制造方法
KR101928897B1 (ko) * 2010-08-27 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US8709889B2 (en) * 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
CN109246363B (zh) * 2018-07-18 2020-08-04 中国科学院国家空间科学中心 一种dmd系统及其存取方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2848272B2 (ja) * 1995-05-12 1999-01-20 日本電気株式会社 半導体記憶装置
JP3618241B2 (ja) * 1999-02-02 2005-02-09 松下電器産業株式会社 半導体記憶装置
JP4216483B2 (ja) * 2001-02-15 2009-01-28 株式会社東芝 半導体メモリ装置
JP4354663B2 (ja) * 2001-03-15 2009-10-28 株式会社東芝 半導体メモリ装置
JP2003051599A (ja) * 2001-05-24 2003-02-21 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2003031693A (ja) * 2001-07-19 2003-01-31 Toshiba Corp 半導体メモリ装置

Similar Documents

Publication Publication Date Title
JP2002094029A5 (enExample)
KR100810614B1 (ko) 디램 셀 모드 및 비휘발성 메모리 셀 모드를 갖는 반도체메모리 소자 및 그 동작방법
US8441053B2 (en) Vertical capacitor-less DRAM cell, DRAM array and operation of the same
JP2007103629A5 (enExample)
JP2005079314A5 (enExample)
TWI243411B (en) Semiconductor memory device, display device, and portable electronic apparatus
JP2005243059A5 (enExample)
JP2013504208A (ja) フィンタイプデバイスシステム及び方法
JP2003031693A5 (enExample)
JP2003317961A5 (enExample)
JP2012256822A5 (ja) 半導体装置
JP2006012878A5 (enExample)
JP2011129893A5 (enExample)
JP2007081335A5 (enExample)
TW200717804A (en) Semiconductor device
JP2011170951A5 (enExample)
JP2011135065A5 (enExample)
JP2011192379A5 (ja) 半導体装置
JP2005266830A5 (enExample)
JP2006080247A5 (enExample)
JP2011187940A5 (enExample)
JP2019012844A (ja) 半導体装置
JP2006012382A5 (enExample)
JPH1187545A5 (ja) 半導体不揮発性記憶装置
JPWO2019186323A5 (enExample)