JP2006012878A5 - - Google Patents

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Publication number
JP2006012878A5
JP2006012878A5 JP2004183338A JP2004183338A JP2006012878A5 JP 2006012878 A5 JP2006012878 A5 JP 2006012878A5 JP 2004183338 A JP2004183338 A JP 2004183338A JP 2004183338 A JP2004183338 A JP 2004183338A JP 2006012878 A5 JP2006012878 A5 JP 2006012878A5
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JP
Japan
Prior art keywords
transistor
memory device
semiconductor memory
channel region
write transistor
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Application number
JP2004183338A
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English (en)
Japanese (ja)
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JP4927321B2 (ja
JP2006012878A (ja
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Publication date
Application filed filed Critical
Priority to JP2004183338A priority Critical patent/JP4927321B2/ja
Priority claimed from JP2004183338A external-priority patent/JP4927321B2/ja
Priority to TW094117706A priority patent/TW200620286A/zh
Priority to CNB2005100781929A priority patent/CN100474592C/zh
Priority to US11/156,558 priority patent/US7375399B2/en
Publication of JP2006012878A publication Critical patent/JP2006012878A/ja
Publication of JP2006012878A5 publication Critical patent/JP2006012878A5/ja
Application granted granted Critical
Publication of JP4927321B2 publication Critical patent/JP4927321B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004183338A 2004-06-22 2004-06-22 半導体記憶装置 Expired - Fee Related JP4927321B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004183338A JP4927321B2 (ja) 2004-06-22 2004-06-22 半導体記憶装置
TW094117706A TW200620286A (en) 2004-06-22 2005-05-30 Semiconductor storage device
CNB2005100781929A CN100474592C (zh) 2004-06-22 2005-06-16 半导体存储器件
US11/156,558 US7375399B2 (en) 2004-06-22 2005-06-21 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004183338A JP4927321B2 (ja) 2004-06-22 2004-06-22 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2006012878A JP2006012878A (ja) 2006-01-12
JP2006012878A5 true JP2006012878A5 (enExample) 2007-09-06
JP4927321B2 JP4927321B2 (ja) 2012-05-09

Family

ID=35479701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004183338A Expired - Fee Related JP4927321B2 (ja) 2004-06-22 2004-06-22 半導体記憶装置

Country Status (4)

Country Link
US (1) US7375399B2 (enExample)
JP (1) JP4927321B2 (enExample)
CN (1) CN100474592C (enExample)
TW (1) TW200620286A (enExample)

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TWI501226B (zh) * 2011-05-20 2015-09-21 Semiconductor Energy Lab 記憶體裝置及驅動記憶體裝置的方法
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
CN104321967B (zh) * 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
KR102027443B1 (ko) * 2013-03-28 2019-11-04 에스케이하이닉스 주식회사 불휘발성 메모리소자 및 그 동작방법
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
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CN109643572A (zh) 2016-09-12 2019-04-16 株式会社半导体能源研究所 存储装置及其工作方法、半导体装置、电子构件以及电子设备
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CN108573926B (zh) * 2017-03-09 2020-01-21 联华电子股份有限公司 半导体存储装置以及其制作方法
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CN114256251B (zh) * 2020-09-21 2025-05-13 硅存储技术股份有限公司 形成具有存储器单元、高压器件和逻辑器件的设备的方法
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