CN100474592C - 半导体存储器件 - Google Patents

半导体存储器件 Download PDF

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Publication number
CN100474592C
CN100474592C CNB2005100781929A CN200510078192A CN100474592C CN 100474592 C CN100474592 C CN 100474592C CN B2005100781929 A CNB2005100781929 A CN B2005100781929A CN 200510078192 A CN200510078192 A CN 200510078192A CN 100474592 C CN100474592 C CN 100474592C
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CN
China
Prior art keywords
transistor
mentioned
storage unit
transistorized
semiconductor storage
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Expired - Fee Related
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CNB2005100781929A
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English (en)
Chinese (zh)
Other versions
CN1713387A (zh
Inventor
石井智之
峰利之
佐野聪明
龟代典史
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Renesas Electronics Corp
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Renesas Technology Corp
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Publication of CN1713387A publication Critical patent/CN1713387A/zh
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Publication of CN100474592C publication Critical patent/CN100474592C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
CNB2005100781929A 2004-06-22 2005-06-16 半导体存储器件 Expired - Fee Related CN100474592C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004183338A JP4927321B2 (ja) 2004-06-22 2004-06-22 半導体記憶装置
JP183338/2004 2004-06-22

Publications (2)

Publication Number Publication Date
CN1713387A CN1713387A (zh) 2005-12-28
CN100474592C true CN100474592C (zh) 2009-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100781929A Expired - Fee Related CN100474592C (zh) 2004-06-22 2005-06-16 半导体存储器件

Country Status (4)

Country Link
US (1) US7375399B2 (enExample)
JP (1) JP4927321B2 (enExample)
CN (1) CN100474592C (enExample)
TW (1) TW200620286A (enExample)

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WO2011114905A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101884031B1 (ko) * 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101904445B1 (ko) 2010-04-16 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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TWI501226B (zh) * 2011-05-20 2015-09-21 Semiconductor Energy Lab 記憶體裝置及驅動記憶體裝置的方法
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
CN104321967B (zh) * 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
KR102027443B1 (ko) * 2013-03-28 2019-11-04 에스케이하이닉스 주식회사 불휘발성 메모리소자 및 그 동작방법
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20160137148A (ko) * 2015-05-22 2016-11-30 에스케이하이닉스 주식회사 전자 장치
WO2017130082A1 (en) 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN109643572A (zh) 2016-09-12 2019-04-16 株式会社半导体能源研究所 存储装置及其工作方法、半导体装置、电子构件以及电子设备
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CN108172545A (zh) * 2016-12-08 2018-06-15 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
CN108269758B (zh) * 2016-12-29 2019-08-23 联华电子股份有限公司 半导体元件的制作方法
CN108573926B (zh) * 2017-03-09 2020-01-21 联华电子股份有限公司 半导体存储装置以及其制作方法
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CN114256251B (zh) * 2020-09-21 2025-05-13 硅存储技术股份有限公司 形成具有存储器单元、高压器件和逻辑器件的设备的方法
US12433014B2 (en) * 2022-04-12 2025-09-30 Globalfoundries U.S. Inc. Structure having different gate dielectric widths in different regions of substrate
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Also Published As

Publication number Publication date
JP4927321B2 (ja) 2012-05-09
JP2006012878A (ja) 2006-01-12
TW200620286A (en) 2006-06-16
US20050280000A1 (en) 2005-12-22
TWI365453B (enExample) 2012-06-01
US7375399B2 (en) 2008-05-20
CN1713387A (zh) 2005-12-28

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