JP2002231832A5 - - Google Patents

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Publication number
JP2002231832A5
JP2002231832A5 JP2001023973A JP2001023973A JP2002231832A5 JP 2002231832 A5 JP2002231832 A5 JP 2002231832A5 JP 2001023973 A JP2001023973 A JP 2001023973A JP 2001023973 A JP2001023973 A JP 2001023973A JP 2002231832 A5 JP2002231832 A5 JP 2002231832A5
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JP
Japan
Prior art keywords
memory cell
transistor
diffusion layer
gate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001023973A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002231832A (ja
JP4309070B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001023973A external-priority patent/JP4309070B2/ja
Priority to JP2001023973A priority Critical patent/JP4309070B2/ja
Priority to US10/058,343 priority patent/US6835987B2/en
Publication of JP2002231832A publication Critical patent/JP2002231832A/ja
Priority to US10/942,013 priority patent/US6949794B2/en
Priority to US11/225,094 priority patent/US7122869B2/en
Publication of JP2002231832A5 publication Critical patent/JP2002231832A5/ja
Priority to US11/538,944 priority patent/US7274075B2/en
Priority to US11/857,934 priority patent/US7737508B2/en
Publication of JP4309070B2 publication Critical patent/JP4309070B2/ja
Application granted granted Critical
Priority to US12/779,357 priority patent/US8338252B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001023973A 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法 Expired - Fee Related JP4309070B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001023973A JP4309070B2 (ja) 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法
US10/058,343 US6835987B2 (en) 2001-01-31 2002-01-30 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US10/942,013 US6949794B2 (en) 2001-01-31 2004-09-16 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US11/225,094 US7122869B2 (en) 2001-01-31 2005-09-14 Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributions
US11/538,944 US7274075B2 (en) 2001-01-31 2006-10-05 Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrations
US11/857,934 US7737508B2 (en) 2001-01-31 2007-09-19 Non-volatile semiconductor memory device and method of manufacturing the same
US12/779,357 US8338252B2 (en) 2001-01-31 2010-05-13 Non-volatile semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001023973A JP4309070B2 (ja) 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2002231832A JP2002231832A (ja) 2002-08-16
JP2002231832A5 true JP2002231832A5 (enExample) 2005-10-06
JP4309070B2 JP4309070B2 (ja) 2009-08-05

Family

ID=18889180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001023973A Expired - Fee Related JP4309070B2 (ja) 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法

Country Status (1)

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JP (1) JP4309070B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100524993B1 (ko) 2003-11-28 2005-10-31 삼성전자주식회사 높은 집적도 및 낮은 소스저항을 갖는 이이피롬셀,이이피롬소자 및 그 제조방법
JP2005327792A (ja) * 2004-05-12 2005-11-24 Toshiba Corp 半導体装置およびその製造方法
JP2009081202A (ja) 2007-09-25 2009-04-16 Toshiba Corp 半導体記憶装置及びその製造方法
KR100884344B1 (ko) 2007-10-10 2009-02-18 주식회사 하이닉스반도체 비대칭 소스/드레인 접합을 갖는 불휘발성 메모리소자 및그 제조방법
JP2010161301A (ja) 2009-01-09 2010-07-22 Toshiba Corp 半導体記憶装置及びその製造方法
JP2012059945A (ja) 2010-09-09 2012-03-22 Toshiba Corp 半導体装置およびその製造方法
JP2013187504A (ja) * 2012-03-09 2013-09-19 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

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