JP4309070B2 - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法 Download PDF

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Publication number
JP4309070B2
JP4309070B2 JP2001023973A JP2001023973A JP4309070B2 JP 4309070 B2 JP4309070 B2 JP 4309070B2 JP 2001023973 A JP2001023973 A JP 2001023973A JP 2001023973 A JP2001023973 A JP 2001023973A JP 4309070 B2 JP4309070 B2 JP 4309070B2
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Japan
Prior art keywords
memory cell
transistor
diffusion layer
insulating film
gate electrode
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Expired - Fee Related
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JP2001023973A
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Japanese (ja)
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JP2002231832A (ja
JP2002231832A5 (enExample
Inventor
利武 八重樫
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Toshiba Corp
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Toshiba Corp
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Priority to JP2001023973A priority Critical patent/JP4309070B2/ja
Priority to US10/058,343 priority patent/US6835987B2/en
Publication of JP2002231832A publication Critical patent/JP2002231832A/ja
Priority to US10/942,013 priority patent/US6949794B2/en
Priority to US11/225,094 priority patent/US7122869B2/en
Publication of JP2002231832A5 publication Critical patent/JP2002231832A5/ja
Priority to US11/538,944 priority patent/US7274075B2/en
Priority to US11/857,934 priority patent/US7737508B2/en
Application granted granted Critical
Publication of JP4309070B2 publication Critical patent/JP4309070B2/ja
Priority to US12/779,357 priority patent/US8338252B2/en
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  • Non-Volatile Memory (AREA)
JP2001023973A 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法 Expired - Fee Related JP4309070B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001023973A JP4309070B2 (ja) 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法
US10/058,343 US6835987B2 (en) 2001-01-31 2002-01-30 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US10/942,013 US6949794B2 (en) 2001-01-31 2004-09-16 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
US11/225,094 US7122869B2 (en) 2001-01-31 2005-09-14 Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributions
US11/538,944 US7274075B2 (en) 2001-01-31 2006-10-05 Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrations
US11/857,934 US7737508B2 (en) 2001-01-31 2007-09-19 Non-volatile semiconductor memory device and method of manufacturing the same
US12/779,357 US8338252B2 (en) 2001-01-31 2010-05-13 Non-volatile semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001023973A JP4309070B2 (ja) 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法

Publications (3)

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JP2002231832A JP2002231832A (ja) 2002-08-16
JP2002231832A5 JP2002231832A5 (enExample) 2005-10-06
JP4309070B2 true JP4309070B2 (ja) 2009-08-05

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JP2001023973A Expired - Fee Related JP4309070B2 (ja) 2001-01-31 2001-01-31 不揮発性半導体記憶装置およびその製造方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100524993B1 (ko) 2003-11-28 2005-10-31 삼성전자주식회사 높은 집적도 및 낮은 소스저항을 갖는 이이피롬셀,이이피롬소자 및 그 제조방법
JP2005327792A (ja) * 2004-05-12 2005-11-24 Toshiba Corp 半導体装置およびその製造方法
JP2009081202A (ja) 2007-09-25 2009-04-16 Toshiba Corp 半導体記憶装置及びその製造方法
KR100884344B1 (ko) 2007-10-10 2009-02-18 주식회사 하이닉스반도체 비대칭 소스/드레인 접합을 갖는 불휘발성 메모리소자 및그 제조방법
JP2010161301A (ja) 2009-01-09 2010-07-22 Toshiba Corp 半導体記憶装置及びその製造方法
JP2012059945A (ja) 2010-09-09 2012-03-22 Toshiba Corp 半導体装置およびその製造方法
JP2013187504A (ja) * 2012-03-09 2013-09-19 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

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