JP2008536336A5 - - Google Patents

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Publication number
JP2008536336A5
JP2008536336A5 JP2008506611A JP2008506611A JP2008536336A5 JP 2008536336 A5 JP2008536336 A5 JP 2008536336A5 JP 2008506611 A JP2008506611 A JP 2008506611A JP 2008506611 A JP2008506611 A JP 2008506611A JP 2008536336 A5 JP2008536336 A5 JP 2008536336A5
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JP
Japan
Prior art keywords
transistor
trench
forming
select
random access
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Granted
Application number
JP2008506611A
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English (en)
Japanese (ja)
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JP5241485B2 (ja
JP2008536336A (ja
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Priority claimed from US10/907,686 external-priority patent/US7816728B2/en
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Publication of JP2008536336A publication Critical patent/JP2008536336A/ja
Publication of JP2008536336A5 publication Critical patent/JP2008536336A5/ja
Application granted granted Critical
Publication of JP5241485B2 publication Critical patent/JP5241485B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008506611A 2005-04-12 2006-04-12 Ｓｏｃ用途のための高密度トレンチ・ベース不揮発性ランダム・アクセスｓｏｎｏｓメモリ・セルの構造及びこれを製造する方法 Expired - Fee Related JP5241485B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/907,686 2005-04-12
US10/907,686 US7816728B2 (en) 2005-04-12 2005-04-12 Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications
PCT/US2006/013561 WO2006110781A2 (en) 2005-04-12 2006-04-12 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications

Publications (3)

Publication Number Publication Date
JP2008536336A JP2008536336A (ja) 2008-09-04
JP2008536336A5 true JP2008536336A5 (enExample) 2009-02-19
JP5241485B2 JP5241485B2 (ja) 2013-07-17

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Family Applications (1)

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JP2008506611A Expired - Fee Related JP5241485B2 (ja) 2005-04-12 2006-04-12 Ｓｏｃ用途のための高密度トレンチ・ベース不揮発性ランダム・アクセスｓｏｎｏｓメモリ・セルの構造及びこれを製造する方法

Country Status (6)

Country Link
US (2) US7816728B2 (enExample)
EP (1) EP1869709A4 (enExample)
JP (1) JP5241485B2 (enExample)
CN (1) CN101147263A (enExample)
TW (1) TW200707765A (enExample)
WO (1) WO2006110781A2 (enExample)

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