EP1869709A4 - Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications - Google Patents

Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications

Info

Publication number
EP1869709A4
EP1869709A4 EP06749815A EP06749815A EP1869709A4 EP 1869709 A4 EP1869709 A4 EP 1869709A4 EP 06749815 A EP06749815 A EP 06749815A EP 06749815 A EP06749815 A EP 06749815A EP 1869709 A4 EP1869709 A4 EP 1869709A4
Authority
EP
European Patent Office
Prior art keywords
trench
density
random access
memory cells
volatile random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06749815A
Other languages
German (de)
French (fr)
Other versions
EP1869709A2 (en
Inventor
Jack Mandelman
Herbert Ho
Tak Ning
Yoichi Otani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP1869709A2 publication Critical patent/EP1869709A2/en
Publication of EP1869709A4 publication Critical patent/EP1869709A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
EP06749815A 2005-04-12 2006-04-12 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications Withdrawn EP1869709A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/907,686 US7816728B2 (en) 2005-04-12 2005-04-12 Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications
PCT/US2006/013561 WO2006110781A2 (en) 2005-04-12 2006-04-12 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications

Publications (2)

Publication Number Publication Date
EP1869709A2 EP1869709A2 (en) 2007-12-26
EP1869709A4 true EP1869709A4 (en) 2008-07-16

Family

ID=37082387

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06749815A Withdrawn EP1869709A4 (en) 2005-04-12 2006-04-12 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications

Country Status (6)

Country Link
US (2) US7816728B2 (en)
EP (1) EP1869709A4 (en)
JP (1) JP5241485B2 (en)
CN (1) CN101147263A (en)
TW (1) TW200707765A (en)
WO (1) WO2006110781A2 (en)

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JP2007201220A (en) * 2006-01-27 2007-08-09 Mitsubishi Electric Corp Semiconductor device
US9299568B2 (en) 2007-05-25 2016-03-29 Cypress Semiconductor Corporation SONOS ONO stack scaling
US8614124B2 (en) 2007-05-25 2013-12-24 Cypress Semiconductor Corporation SONOS ONO stack scaling
US7951666B2 (en) 2007-10-16 2011-05-31 International Business Machines Corporation Deep trench capacitor and method
US9431549B2 (en) 2007-12-12 2016-08-30 Cypress Semiconductor Corporation Nonvolatile charge trap memory device having a high dielectric constant blocking region
US8120095B2 (en) * 2007-12-13 2012-02-21 International Business Machines Corporation High-density, trench-based non-volatile random access SONOS memory SOC applications
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US8071453B1 (en) 2009-04-24 2011-12-06 Cypress Semiconductor Corporation Method of ONO integration into MOS flow
US9102522B2 (en) 2009-04-24 2015-08-11 Cypress Semiconductor Corporation Method of ONO integration into logic CMOS flow
KR20110045632A (en) * 2009-10-27 2011-05-04 삼성전자주식회사 Semiconductor chip, stack module and memory card
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US9646869B2 (en) 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8692381B1 (en) * 2011-01-06 2014-04-08 Xilinx, Inc. Integrated circuits with a resistance to single event upset occurrence and methods for providing the same
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8435859B2 (en) 2011-02-16 2013-05-07 Micron Technology, Inc. Methods of forming electrical contacts
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US8421127B2 (en) * 2011-07-15 2013-04-16 Windbond Electronics Corp. Semiconductor device and method for fabricating the same
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
CN103022041B (en) * 2011-09-22 2015-10-14 上海华虹宏力半导体制造有限公司 SONOS non-volatility memorizer
CN103137194A (en) * 2011-11-23 2013-06-05 上海华虹Nec电子有限公司 Memory cell circuit structure of flash memory
US9006100B2 (en) * 2012-08-07 2015-04-14 Globalfoundries Inc. Middle-of-the-line constructs using diffusion contact structures
US8796098B1 (en) * 2013-02-26 2014-08-05 Cypress Semiconductor Corporation Embedded SONOS based memory cells
US20150171104A1 (en) 2013-12-12 2015-06-18 Cypress Semiconductor Corporation Complementary sonos integration into cmos flow
US9508844B2 (en) * 2014-01-06 2016-11-29 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and formation thereof
US8916432B1 (en) 2014-01-21 2014-12-23 Cypress Semiconductor Corporation Methods to integrate SONOS into CMOS flow
US9349634B2 (en) * 2014-02-21 2016-05-24 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and formation thereof
US9209187B1 (en) 2014-08-18 2015-12-08 Micron Technology, Inc. Methods of forming an array of gated devices
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KR102298775B1 (en) * 2015-01-21 2021-09-07 에스케이하이닉스 주식회사 Single poly non-volatile memory device and method of fabricating the same
US9484431B1 (en) * 2015-07-29 2016-11-01 International Business Machines Corporation Pure boron for silicide contact
FR3059458B1 (en) * 2016-11-25 2019-03-29 Stmicroelectronics (Rousset) Sas COMPACTED NON-VOLATILE MEMORY DEVICE OF THE CHARGE TRAP TYPE IN A DIELECTRIC INTERFACE
WO2019005135A1 (en) * 2017-06-30 2019-01-03 Intel Corporation Usage of trench contact in read only memory programming
JP2019102520A (en) * 2017-11-29 2019-06-24 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method
CN108269808B (en) * 2018-01-11 2020-09-25 上海华虹宏力半导体制造有限公司 SONOS device and manufacturing method thereof
CN108878439A (en) * 2018-06-29 2018-11-23 上海华虹宏力半导体制造有限公司 SONOS non-volatility memorizer and its manufacturing method
TWI679752B (en) * 2018-12-18 2019-12-11 力晶積成電子製造股份有限公司 Memory device and manufacturing method thereof
US10991702B2 (en) * 2019-05-15 2021-04-27 Nanya Technology Corporation Semiconductor device and method of preparing the same
CN111403400B (en) * 2020-03-31 2023-05-26 长江存储科技有限责任公司 Array common source of memory and forming method thereof
TWI745919B (en) * 2020-04-08 2021-11-11 旺宏電子股份有限公司 Memory device
US11889684B2 (en) 2020-11-18 2024-01-30 Sandisk Technologies Llc Three-dimensional memory device with separated source-side lines and method of making the same
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Also Published As

Publication number Publication date
EP1869709A2 (en) 2007-12-26
WO2006110781A3 (en) 2007-04-19
US7816728B2 (en) 2010-10-19
US20060226474A1 (en) 2006-10-12
US7807526B2 (en) 2010-10-05
JP2008536336A (en) 2008-09-04
US20080057647A1 (en) 2008-03-06
TW200707765A (en) 2007-02-16
WO2006110781A2 (en) 2006-10-19
JP5241485B2 (en) 2013-07-17
CN101147263A (en) 2008-03-19

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