GB0603985D0 - Multi-bit memory cell structures and devices - Google Patents

Multi-bit memory cell structures and devices

Info

Publication number
GB0603985D0
GB0603985D0 GBGB0603985.3A GB0603985A GB0603985D0 GB 0603985 D0 GB0603985 D0 GB 0603985D0 GB 0603985 A GB0603985 A GB 0603985A GB 0603985 D0 GB0603985 D0 GB 0603985D0
Authority
GB
United Kingdom
Prior art keywords
devices
memory cell
bit memory
cell structures
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0603985.3A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge University Technical Services Ltd CUTS
Original Assignee
Cambridge University Technical Services Ltd CUTS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge University Technical Services Ltd CUTS filed Critical Cambridge University Technical Services Ltd CUTS
Priority to GBGB0603985.3A priority Critical patent/GB0603985D0/en
Priority to PCT/GB2006/050045 priority patent/WO2007099277A1/en
Publication of GB0603985D0 publication Critical patent/GB0603985D0/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
GBGB0603985.3A 2006-02-28 2006-02-28 Multi-bit memory cell structures and devices Ceased GB0603985D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0603985.3A GB0603985D0 (en) 2006-02-28 2006-02-28 Multi-bit memory cell structures and devices
PCT/GB2006/050045 WO2007099277A1 (en) 2006-02-28 2006-03-02 Multi-bit memory cell structures and devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0603985.3A GB0603985D0 (en) 2006-02-28 2006-02-28 Multi-bit memory cell structures and devices

Publications (1)

Publication Number Publication Date
GB0603985D0 true GB0603985D0 (en) 2006-04-05

Family

ID=36178929

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0603985.3A Ceased GB0603985D0 (en) 2006-02-28 2006-02-28 Multi-bit memory cell structures and devices

Country Status (2)

Country Link
GB (1) GB0603985D0 (en)
WO (1) WO2007099277A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7656700B2 (en) * 2007-09-17 2010-02-02 Seagate Technology Llc Magnetoresistive sensor memory with multiferroic material
TW201027715A (en) * 2008-12-23 2010-07-16 Ibm Memory element
US8280210B2 (en) 2009-07-07 2012-10-02 Alcatel Lucent Apparatus employing multiferroic materials for tunable permittivity or permeability
US8310868B2 (en) 2010-09-17 2012-11-13 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8358534B2 (en) 2010-09-17 2013-01-22 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US9666639B2 (en) 2010-09-17 2017-05-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8300454B2 (en) 2010-09-17 2012-10-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
FR2973163B1 (en) * 2011-03-23 2013-10-25 Thales Sa DEVICE COMPRISING DIFFERENT THIN LAYERS AND USE OF SUCH A DEVICE
GB2576174B (en) * 2018-08-07 2021-06-16 Ip2Ipo Innovations Ltd Memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3873935B2 (en) * 2003-06-18 2007-01-31 セイコーエプソン株式会社 Ferroelectric memory device

Also Published As

Publication number Publication date
WO2007099277A1 (en) 2007-09-07

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)