CN101147263A - 用于soc应用的高密度沟槽式非易失性随机访问sonos存储单元的结构及制造方法 - Google Patents

用于soc应用的高密度沟槽式非易失性随机访问sonos存储单元的结构及制造方法 Download PDF

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Publication number
CN101147263A
CN101147263A CNA2006800097797A CN200680009779A CN101147263A CN 101147263 A CN101147263 A CN 101147263A CN A2006800097797 A CNA2006800097797 A CN A2006800097797A CN 200680009779 A CN200680009779 A CN 200680009779A CN 101147263 A CN101147263 A CN 101147263A
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China
Prior art keywords
groove structure
transistor
memory cell
random access
selection
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Pending
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CNA2006800097797A
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English (en)
Chinese (zh)
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J·曼德尔曼
H·霍
T·宁格
大谷洋一
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN101147263A publication Critical patent/CN101147263A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/693—Vertical IGFETs having charge trapping gate insulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNA2006800097797A 2005-04-12 2006-04-12 用于soc应用的高密度沟槽式非易失性随机访问sonos存储单元的结构及制造方法 Pending CN101147263A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/907,686 2005-04-12
US10/907,686 US7816728B2 (en) 2005-04-12 2005-04-12 Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications

Publications (1)

Publication Number Publication Date
CN101147263A true CN101147263A (zh) 2008-03-19

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US (2) US7816728B2 (enExample)
EP (1) EP1869709A4 (enExample)
JP (1) JP5241485B2 (enExample)
CN (1) CN101147263A (enExample)
TW (1) TW200707765A (enExample)
WO (1) WO2006110781A2 (enExample)

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CN102130135A (zh) * 2009-12-25 2011-07-20 三洋电机株式会社 非易失性半导体存储装置及其制造方法
CN103022041A (zh) * 2011-09-22 2013-04-03 上海华虹Nec电子有限公司 Sonos非挥发性存储器
CN103137194A (zh) * 2011-11-23 2013-06-05 上海华虹Nec电子有限公司 闪存存储器的存储单元电路结构
CN111341783A (zh) * 2018-12-18 2020-06-26 力晶科技股份有限公司 内存组件及其制造方法
CN111403400A (zh) * 2020-03-31 2020-07-10 长江存储科技有限责任公司 存储器的阵列共源极及其形成方法
CN114242719A (zh) * 2015-03-11 2022-03-25 瑞萨电子株式会社 半导体器件及其制造方法

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101983423A (zh) * 2008-03-31 2011-03-02 富士通半导体股份有限公司 半导体器件
CN101983423B (zh) * 2008-03-31 2014-03-26 富士通半导体股份有限公司 半导体器件
CN102130135A (zh) * 2009-12-25 2011-07-20 三洋电机株式会社 非易失性半导体存储装置及其制造方法
CN102130135B (zh) * 2009-12-25 2013-08-07 三洋电机株式会社 非易失性半导体存储装置及其制造方法
CN103022041A (zh) * 2011-09-22 2013-04-03 上海华虹Nec电子有限公司 Sonos非挥发性存储器
CN103022041B (zh) * 2011-09-22 2015-10-14 上海华虹宏力半导体制造有限公司 Sonos非挥发性存储器
CN103137194A (zh) * 2011-11-23 2013-06-05 上海华虹Nec电子有限公司 闪存存储器的存储单元电路结构
CN114242719A (zh) * 2015-03-11 2022-03-25 瑞萨电子株式会社 半导体器件及其制造方法
CN111341783A (zh) * 2018-12-18 2020-06-26 力晶科技股份有限公司 内存组件及其制造方法
CN111403400A (zh) * 2020-03-31 2020-07-10 长江存储科技有限责任公司 存储器的阵列共源极及其形成方法
CN111403400B (zh) * 2020-03-31 2023-05-26 长江存储科技有限责任公司 存储器的阵列共源极及其形成方法

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Publication number Publication date
JP5241485B2 (ja) 2013-07-17
WO2006110781A3 (en) 2007-04-19
US20060226474A1 (en) 2006-10-12
WO2006110781A2 (en) 2006-10-19
TW200707765A (en) 2007-02-16
US20080057647A1 (en) 2008-03-06
EP1869709A4 (en) 2008-07-16
US7816728B2 (en) 2010-10-19
JP2008536336A (ja) 2008-09-04
EP1869709A2 (en) 2007-12-26
US7807526B2 (en) 2010-10-05

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