JP2004297048A - 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法 - Google Patents

集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法 Download PDF

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JP2004297048A
JP2004297048A JP2004063307A JP2004063307A JP2004297048A JP 2004297048 A JP2004297048 A JP 2004297048A JP 2004063307 A JP2004063307 A JP 2004063307A JP 2004063307 A JP2004063307 A JP 2004063307A JP 2004297048 A JP2004297048 A JP 2004297048A
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Prior art keywords
electrode
active layer
thin film
film transistor
integrated circuit
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JP2004063307A
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Japanese (ja)
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JP2004297048A5 (enExample
Inventor
Kiyoshi Kato
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004063307A priority Critical patent/JP2004297048A/ja
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Publication of JP2004297048A5 publication Critical patent/JP2004297048A5/ja
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  • Thin Film Transistor (AREA)
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JP2004063307A 2003-03-11 2004-03-08 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法 Withdrawn JP2004297048A (ja)

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JP2004063307A JP2004297048A (ja) 2003-03-11 2004-03-08 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法

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JP2003065314 2003-03-11
JP2003065393 2003-03-11
JP2004063307A JP2004297048A (ja) 2003-03-11 2004-03-08 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法

Related Child Applications (1)

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JP2011072882A Division JP2011205103A (ja) 2003-03-11 2011-03-29 半導体表示装置

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JP2004297048A true JP2004297048A (ja) 2004-10-21
JP2004297048A5 JP2004297048A5 (enExample) 2007-04-19

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019357A (ja) * 2005-07-11 2007-01-25 Hitachi Ltd 半導体装置
JP2007503678A (ja) * 2003-05-13 2007-02-22 イノヴァティーヴ シリコン， インコーポレーテッド 半導体メモリ素子及び該素子を動作させる方法
JP2007194267A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 半導体記憶装置
JP2012212907A (ja) * 2005-02-10 2012-11-01 Semiconductor Energy Lab Co Ltd 半導体装置
KR20120129785A (ko) * 2011-05-19 2012-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 제작 방법
JP2017005271A (ja) * 2009-06-30 2017-01-05 株式会社半導体エネルギー研究所 半導体装置
CN109246363A (zh) * 2018-07-18 2019-01-18 中国科学院国家空间科学中心 一种dmd系统及其存取方法
JP2020061581A (ja) * 2010-08-27 2020-04-16 株式会社半導体エネルギー研究所 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316337A (ja) * 1995-05-12 1996-11-29 Nec Corp 半導体記憶装置
JP2000223589A (ja) * 1999-02-02 2000-08-11 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2002246571A (ja) * 2001-02-15 2002-08-30 Toshiba Corp 半導体メモリ装置
JP2002343886A (ja) * 2001-03-15 2002-11-29 Toshiba Corp 半導体メモリ装置
JP2003031693A (ja) * 2001-07-19 2003-01-31 Toshiba Corp 半導体メモリ装置
JP2003051599A (ja) * 2001-05-24 2003-02-21 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316337A (ja) * 1995-05-12 1996-11-29 Nec Corp 半導体記憶装置
JP2000223589A (ja) * 1999-02-02 2000-08-11 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2002246571A (ja) * 2001-02-15 2002-08-30 Toshiba Corp 半導体メモリ装置
JP2002343886A (ja) * 2001-03-15 2002-11-29 Toshiba Corp 半導体メモリ装置
JP2003051599A (ja) * 2001-05-24 2003-02-21 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2003031693A (ja) * 2001-07-19 2003-01-31 Toshiba Corp 半導体メモリ装置

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007503678A (ja) * 2003-05-13 2007-02-22 イノヴァティーヴ シリコン， インコーポレーテッド 半導体メモリ素子及び該素子を動作させる方法
US8604547B2 (en) 2005-02-10 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
JP2012212907A (ja) * 2005-02-10 2012-11-01 Semiconductor Energy Lab Co Ltd 半導体装置
JP2007019357A (ja) * 2005-07-11 2007-01-25 Hitachi Ltd 半導体装置
JP2007194267A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 半導体記憶装置
US12302645B2 (en) 2009-06-30 2025-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10790383B2 (en) 2009-06-30 2020-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2017005271A (ja) * 2009-06-30 2017-01-05 株式会社半導体エネルギー研究所 半導体装置
US9985118B2 (en) 2009-06-30 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20180233589A1 (en) 2009-06-30 2018-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11417754B2 (en) 2009-06-30 2022-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10418467B2 (en) 2009-06-30 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2021073738A (ja) * 2010-08-27 2021-05-13 株式会社半導体エネルギー研究所 半導体装置
JP2020061581A (ja) * 2010-08-27 2020-04-16 株式会社半導体エネルギー研究所 半導体装置
KR20120129785A (ko) * 2011-05-19 2012-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 제작 방법
KR102035988B1 (ko) 2011-05-19 2019-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 제작 방법
JP2012256877A (ja) * 2011-05-19 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体記憶装置およびその作製方法
CN109246363A (zh) * 2018-07-18 2019-01-18 中国科学院国家空间科学中心 一种dmd系统及其存取方法

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