JP2003031693A5 - - Google Patents

Download PDF

Info

Publication number
JP2003031693A5
JP2003031693A5 JP2001220461A JP2001220461A JP2003031693A5 JP 2003031693 A5 JP2003031693 A5 JP 2003031693A5 JP 2001220461 A JP2001220461 A JP 2001220461A JP 2001220461 A JP2001220461 A JP 2001220461A JP 2003031693 A5 JP2003031693 A5 JP 2003031693A5
Authority
JP
Japan
Prior art keywords
channel body
misfet
memory device
gate
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001220461A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003031693A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001220461A priority Critical patent/JP2003031693A/ja
Priority claimed from JP2001220461A external-priority patent/JP2003031693A/ja
Priority to US09/964,851 priority patent/US6617651B2/en
Priority to EP01123208A priority patent/EP1280205A3/en
Priority to TW090126711A priority patent/TW519751B/zh
Priority to KR10-2001-0069942A priority patent/KR100440188B1/ko
Priority to CN011435461A priority patent/CN1217415C/zh
Publication of JP2003031693A publication Critical patent/JP2003031693A/ja
Priority to US10/617,737 priority patent/US6897531B2/en
Publication of JP2003031693A5 publication Critical patent/JP2003031693A5/ja
Pending legal-status Critical Current

Links

JP2001220461A 2001-07-19 2001-07-19 半導体メモリ装置 Pending JP2003031693A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001220461A JP2003031693A (ja) 2001-07-19 2001-07-19 半導体メモリ装置
US09/964,851 US6617651B2 (en) 2001-07-19 2001-09-28 Semiconductor memory device
EP01123208A EP1280205A3 (en) 2001-07-19 2001-10-01 Semiconductor memory device
TW090126711A TW519751B (en) 2001-07-19 2001-10-29 Semiconductor memory device
KR10-2001-0069942A KR100440188B1 (ko) 2001-07-19 2001-11-10 반도체 메모리 장치
CN011435461A CN1217415C (zh) 2001-07-19 2001-12-11 半导体存储器件
US10/617,737 US6897531B2 (en) 2001-07-19 2003-07-14 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001220461A JP2003031693A (ja) 2001-07-19 2001-07-19 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JP2003031693A JP2003031693A (ja) 2003-01-31
JP2003031693A5 true JP2003031693A5 (enExample) 2005-07-21

Family

ID=19054277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001220461A Pending JP2003031693A (ja) 2001-07-19 2001-07-19 半導体メモリ装置

Country Status (6)

Country Link
US (2) US6617651B2 (enExample)
EP (1) EP1280205A3 (enExample)
JP (1) JP2003031693A (enExample)
KR (1) KR100440188B1 (enExample)
CN (1) CN1217415C (enExample)
TW (1) TW519751B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7184298B2 (en) 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7736959B2 (en) 2003-07-22 2010-06-15 Innovative Silicon Isi Sa Integrated circuit device, and method of fabricating same
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device

Families Citing this family (143)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI230392B (en) 2001-06-18 2005-04-01 Innovative Silicon Sa Semiconductor device
US6642133B2 (en) * 2001-12-20 2003-11-04 Intel Corporation Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering
JP2003309182A (ja) * 2002-04-17 2003-10-31 Hitachi Ltd 半導体装置の製造方法及び半導体装置
EP1357603A3 (en) 2002-04-18 2004-01-14 Innovative Silicon SA Semiconductor device
EP1355316B1 (en) 2002-04-18 2007-02-21 Innovative Silicon SA Data storage device and refreshing method for use with such device
US6865407B2 (en) * 2002-07-11 2005-03-08 Optical Sensors, Inc. Calibration technique for non-invasive medical devices
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US7042027B2 (en) * 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US7710771B2 (en) * 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
JP4850387B2 (ja) * 2002-12-09 2012-01-11 ルネサスエレクトロニクス株式会社 半導体装置
JP2004297048A (ja) * 2003-03-11 2004-10-21 Semiconductor Energy Lab Co Ltd 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法
US7541614B2 (en) * 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
US7085153B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US6912150B2 (en) 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US20040228168A1 (en) 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
JP4282388B2 (ja) 2003-06-30 2009-06-17 株式会社東芝 半導体記憶装置
FR2857150A1 (fr) * 2003-07-01 2005-01-07 St Microelectronics Sa Element integre de memoire dynamique a acces aleatoire, matrice et procede de fabrication de tels elements
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US7119393B1 (en) * 2003-07-28 2006-10-10 Actel Corporation Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit
JP4077381B2 (ja) 2003-08-29 2008-04-16 株式会社東芝 半導体集積回路装置
US7191380B2 (en) * 2003-09-10 2007-03-13 Hewlett-Packard Development Company, L.P. Defect-tolerant and fault-tolerant circuit interconnections
JP4443886B2 (ja) * 2003-09-30 2010-03-31 株式会社東芝 半導体記憶装置
JP4044510B2 (ja) 2003-10-30 2008-02-06 株式会社東芝 半導体集積回路装置
JP4058403B2 (ja) 2003-11-21 2008-03-12 株式会社東芝 半導体装置
US7002842B2 (en) * 2003-11-26 2006-02-21 Intel Corporation Floating-body dynamic random access memory with purge line
JP4559728B2 (ja) * 2003-12-26 2010-10-13 株式会社東芝 半導体記憶装置
JP4342970B2 (ja) 2004-02-02 2009-10-14 株式会社東芝 半導体メモリ装置及びその製造方法
JP4028499B2 (ja) * 2004-03-01 2007-12-26 株式会社東芝 半導体記憶装置
JP4002900B2 (ja) 2004-03-02 2007-11-07 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
JP4110115B2 (ja) * 2004-04-15 2008-07-02 株式会社東芝 半導体記憶装置
JP3962729B2 (ja) 2004-06-03 2007-08-22 株式会社東芝 半導体装置
US7518182B2 (en) 2004-07-20 2009-04-14 Micron Technology, Inc. DRAM layout with vertical FETs and method of formation
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
US7158410B2 (en) * 2004-08-27 2007-01-02 Micron Technology, Inc. Integrated DRAM-NVRAM multi-level memory
US7271433B1 (en) 2004-09-02 2007-09-18 Micron Technology, Inc. High-density single transistor vertical memory gain cell
US7285812B2 (en) * 2004-09-02 2007-10-23 Micron Technology, Inc. Vertical transistors
US7259415B1 (en) 2004-09-02 2007-08-21 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US7271052B1 (en) 2004-09-02 2007-09-18 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
JP2006073939A (ja) * 2004-09-06 2006-03-16 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法
JP4083160B2 (ja) * 2004-10-04 2008-04-30 株式会社東芝 半導体記憶装置およびfbcメモリセルの駆動方法
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
US7251164B2 (en) 2004-11-10 2007-07-31 Innovative Silicon S.A. Circuitry for and method of improving statistical distribution of integrated circuits
JP4081071B2 (ja) * 2004-11-26 2008-04-23 株式会社東芝 半導体記憶装置とその製造方法
US7199419B2 (en) * 2004-12-13 2007-04-03 Micron Technology, Inc. Memory structure for reduced floating body effect
US7301838B2 (en) 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
JP4470171B2 (ja) * 2004-12-15 2010-06-02 エルピーダメモリ株式会社 半導体チップ、その製造方法およびその用途
US7301803B2 (en) 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
KR100955720B1 (ko) * 2004-12-28 2010-05-03 스펜션 엘엘씨 반도체 장치
JP2006269535A (ja) * 2005-03-22 2006-10-05 Toshiba Corp 半導体記憶装置および半導体記憶装置の製造方法
KR100663359B1 (ko) 2005-03-31 2007-01-02 삼성전자주식회사 리세스 채널 트랜지스터 구조를 갖는 단일 트랜지스터플로팅 바디 디램 셀 및 그 제조방법
US7371627B1 (en) 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7120046B1 (en) * 2005-05-13 2006-10-10 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US7538389B2 (en) * 2005-06-08 2009-05-26 Micron Technology, Inc. Capacitorless DRAM on bulk silicon
US7517741B2 (en) * 2005-06-30 2009-04-14 Freescale Semiconductor, Inc. Single transistor memory cell with reduced recombination rates
US7238555B2 (en) * 2005-06-30 2007-07-03 Freescale Semiconductor, Inc. Single transistor memory cell with reduced programming voltages
JP2007018588A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体記憶装置および半導体記憶装置の駆動方法
US7888721B2 (en) * 2005-07-06 2011-02-15 Micron Technology, Inc. Surround gate access transistors with grown ultra-thin bodies
US7768051B2 (en) * 2005-07-25 2010-08-03 Micron Technology, Inc. DRAM including a vertical surround gate transistor
US20070023833A1 (en) * 2005-07-28 2007-02-01 Serguei Okhonin Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same
US7696567B2 (en) 2005-08-31 2010-04-13 Micron Technology, Inc Semiconductor memory device
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
JP4664777B2 (ja) * 2005-09-07 2011-04-06 株式会社東芝 半導体装置
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US20070085140A1 (en) * 2005-10-19 2007-04-19 Cedric Bassin One transistor memory cell having strained electrically floating body region, and method of operating same
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
JP2007189017A (ja) * 2006-01-12 2007-07-26 Toshiba Corp 半導体装置
JP2007194259A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 半導体装置及びその製造方法
US7542345B2 (en) 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
JP4373986B2 (ja) * 2006-02-16 2009-11-25 株式会社東芝 半導体記憶装置
JP2007242950A (ja) * 2006-03-09 2007-09-20 Toshiba Corp 半導体記憶装置
US8501581B2 (en) 2006-03-29 2013-08-06 Micron Technology, Inc. Methods of forming semiconductor constructions
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
WO2007128738A1 (en) 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US7608898B2 (en) * 2006-10-31 2009-10-27 Freescale Semiconductor, Inc. One transistor DRAM cell structure
JP2008117489A (ja) * 2006-11-07 2008-05-22 Toshiba Corp 半導体記憶装置
JP2008124302A (ja) * 2006-11-14 2008-05-29 Toshiba Corp 半導体記憶装置およびその製造方法
US8217435B2 (en) 2006-12-22 2012-07-10 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions
JP2008177273A (ja) * 2007-01-17 2008-07-31 Toshiba Corp 半導体記憶装置及び半導体記憶装置の製造方法
KR101277402B1 (ko) 2007-01-26 2013-06-20 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 dram 트랜지스터
JP5019436B2 (ja) * 2007-02-22 2012-09-05 ルネサスエレクトロニクス株式会社 半導体集積回路
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP5130571B2 (ja) * 2007-06-19 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置
KR100881825B1 (ko) * 2007-07-27 2009-02-03 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
JP2009093708A (ja) * 2007-10-04 2009-04-30 Toshiba Corp 半導体記憶装置およびその駆動方法
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
KR101593612B1 (ko) * 2008-01-04 2016-02-12 상뜨르 나쇼날 드 라 러쉐르쉬 샹띠피끄 더블게이트 플로팅 바디 메모리 다바이스
CN101494222B (zh) 2008-01-23 2010-08-25 苏州东微半导体有限公司 半导体存储器器件、半导体存储器阵列及写入方法
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
JP5121475B2 (ja) * 2008-01-28 2013-01-16 株式会社東芝 半導体記憶装置
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
KR101505494B1 (ko) 2008-04-30 2015-03-24 한양대학교 산학협력단 무 커패시터 메모리 소자
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
JP4751432B2 (ja) * 2008-09-26 2011-08-17 シャープ株式会社 半導体記憶装置
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
KR20100062212A (ko) * 2008-12-01 2010-06-10 삼성전자주식회사 반도체 메모리 장치
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
JP2010157580A (ja) * 2008-12-26 2010-07-15 Toshiba Corp 半導体記憶装置
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US7929343B2 (en) * 2009-04-07 2011-04-19 Micron Technology, Inc. Methods, devices, and systems relating to memory cells having a floating body
US8148780B2 (en) * 2009-03-24 2012-04-03 Micron Technology, Inc. Devices and systems relating to a memory cell having a floating body
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8138541B2 (en) * 2009-07-02 2012-03-20 Micron Technology, Inc. Memory cells
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
JP5564918B2 (ja) * 2009-12-03 2014-08-06 ソニー株式会社 撮像素子およびカメラシステム
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
WO2011115893A2 (en) 2010-03-15 2011-09-22 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8421156B2 (en) * 2010-06-25 2013-04-16 International Business Machines Corporation FET with self-aligned back gate
KR101027702B1 (ko) * 2010-10-04 2011-04-12 주식회사 하이닉스반도체 플로팅 바디 캐패시터를 구비한 반도체 메모리 소자 및 그 제조방법
DE102011004757B4 (de) 2011-02-25 2012-12-20 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Vertikale Speichertransistoren mit einem sich frei einstellenden Körperpotential, die in Vollsubstratbauelementen hergestellt sind und vergrabene Abfrage- und Wortleitungen aufweisen und Verfahren zur Herstellung der Speichertransistoren
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US8742481B2 (en) 2011-08-16 2014-06-03 Micron Technology, Inc. Apparatuses and methods comprising a channel region having different minority carrier lifetimes
US9401363B2 (en) 2011-08-23 2016-07-26 Micron Technology, Inc. Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices
JP2021077831A (ja) * 2019-11-13 2021-05-20 ルネサスエレクトロニクス株式会社 半導体装置
JP7057032B1 (ja) * 2020-12-25 2022-04-19 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
CN113594163B (zh) * 2021-07-05 2023-12-19 长鑫存储技术有限公司 存储器及其制造方法
US11985808B2 (en) 2021-07-05 2024-05-14 Changxin Memory Technologies, Inc. Memory and method for manufacturing same
US12108588B2 (en) 2021-07-05 2024-10-01 Changxin Memory Technologies, Inc. Memory and method for manufacturing same
CN115099170B (zh) * 2022-06-24 2024-07-26 哈尔滨工程大学 一种基于流动拟态与寻优及结构反向构建的设计方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34855A (en) * 1862-04-01 Improved brake for railroad-cars
US51378A (en) * 1865-12-05 Improved means of raising jrtonitor-turrets by hydraulic pressure
JPH03171768A (ja) 1989-11-30 1991-07-25 Toshiba Corp 半導体記憶装置
JPH0799251A (ja) * 1992-12-10 1995-04-11 Sony Corp 半導体メモリセル
JPH0730001A (ja) * 1993-07-09 1995-01-31 Mitsubishi Electric Corp 半導体装置
JP2734962B2 (ja) * 1993-12-27 1998-04-02 日本電気株式会社 薄膜トランジスタ及びその製造方法
JPH07321332A (ja) * 1994-05-21 1995-12-08 Sony Corp Mis型半導体装置及びその製造方法
US5592077A (en) * 1995-02-13 1997-01-07 Cirrus Logic, Inc. Circuits, systems and methods for testing ASIC and RAM memory devices
JP2848272B2 (ja) * 1995-05-12 1999-01-20 日本電気株式会社 半導体記憶装置
KR100257765B1 (ko) * 1997-12-30 2000-06-01 김영환 기억소자 및 그 제조 방법
JP2001051292A (ja) * 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
US6185712B1 (en) * 1998-07-02 2001-02-06 International Business Machines Corporation Chip performance optimization with self programmed built in self test
US6621725B2 (en) * 2000-08-17 2003-09-16 Kabushiki Kaisha Toshiba Semiconductor memory device with floating storage bulk region and method of manufacturing the same
JP4064607B2 (ja) * 2000-09-08 2008-03-19 株式会社東芝 半導体メモリ装置
US6686630B2 (en) * 2001-02-07 2004-02-03 International Business Machines Corporation Damascene double-gate MOSFET structure and its fabrication method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7736959B2 (en) 2003-07-22 2010-06-15 Innovative Silicon Isi Sa Integrated circuit device, and method of fabricating same
US7184298B2 (en) 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device

Similar Documents

Publication Publication Date Title
JP2003031693A5 (enExample)
US8705278B2 (en) One-transistor cell semiconductor on insulator random access memory
US6144579A (en) Ferroelectric memory device
US7551491B2 (en) Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof
KR980006291A (ko) 강유전체 메모리
JP2002246571A5 (enExample)
JP2005079314A5 (enExample)
JP2002094029A5 (enExample)
TWI793973B (zh) 半導體元件記憶裝置
CN1551363A (zh) 半导体存储装置
KR20080018040A (ko) 디램 셀 모드 및 비휘발성 메모리 셀 모드를 갖는 반도체메모리 소자 및 그 동작방법
KR880002181A (ko) 반도체 기억장치
WO2005055243A3 (en) Low voltage eeprom memory arrays with isolated wells for each colum
JP3554666B2 (ja) 半導体メモリ装置
JP2006080247A5 (enExample)
TW200428490A (en) Semiconductor memory device, display device, and portable electronic apparatus
TWI242775B (en) Method for operating nor-array memory module composed of p-type memory cells
CN110880537B (zh) 排列电路
KR920000137A (ko) 불휘발성 반도체기억장치
CN1949391B (zh) 具有金属绝缘体转换膜电阻器的半导体存储器件
TWI793968B (zh) 半導體元件記憶裝置
CN100379026C (zh) 沙漏随机访问存储器
US7710759B2 (en) Nonvolatile ferroelectric memory device
JP4889268B2 (ja) Eepromとeepromの駆動方法
WO2023181172A1 (ja) 半導体メモリ装置