CN101494222B - 半导体存储器器件、半导体存储器阵列及写入方法 - Google Patents
半导体存储器器件、半导体存储器阵列及写入方法 Download PDFInfo
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- CN101494222B CN101494222B CN200810043070XA CN200810043070A CN101494222B CN 101494222 B CN101494222 B CN 101494222B CN 200810043070X A CN200810043070X A CN 200810043070XA CN 200810043070 A CN200810043070 A CN 200810043070A CN 101494222 B CN101494222 B CN 101494222B
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
字线电压/V | 位线电压/V | 源线电压/V | |
写″1″ | -2.8 | 1.8 | 0 |
写″0″ | 2.5 | 0 | 0 |
读 | 2.5 | 1 | 0 |
挂起 | 0 | 0.5 | 0 |
Claims (17)
Priority Applications (2)
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CN200810043070XA CN101494222B (zh) | 2008-01-23 | 2008-01-23 | 半导体存储器器件、半导体存储器阵列及写入方法 |
US12/285,619 US8089801B2 (en) | 2008-01-23 | 2008-10-09 | Semiconductor memory device and method of forming the same |
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CN200810043070XA CN101494222B (zh) | 2008-01-23 | 2008-01-23 | 半导体存储器器件、半导体存储器阵列及写入方法 |
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CN101494222A CN101494222A (zh) | 2009-07-29 |
CN101494222B true CN101494222B (zh) | 2010-08-25 |
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US (1) | US8089801B2 (zh) |
CN (1) | CN101494222B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9472561B2 (en) | 2013-09-06 | 2016-10-18 | Su Zhou Oriental Semiconductor Co., Ltd. | Manufacturing method for semi-floating gate device |
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US20100044760A1 (en) * | 2006-11-16 | 2010-02-25 | Nxp, B.V. | Self-aligned impact-ionization field effect transistor |
KR101565797B1 (ko) * | 2009-02-16 | 2015-11-05 | 삼성전자주식회사 | 콘택 플러그를 포함하는 반도체 장치 |
US8138541B2 (en) * | 2009-07-02 | 2012-03-20 | Micron Technology, Inc. | Memory cells |
DE102009038709B4 (de) * | 2009-08-25 | 2017-05-11 | Infineon Technologies Austria Ag | Halbleiterbauelement mit dielektrischem Schichtstapel |
CN101707202B (zh) * | 2009-11-20 | 2012-01-11 | 苏州东微半导体有限公司 | 半导体感光器件及其制造方法和应用 |
US8325531B2 (en) * | 2010-01-07 | 2012-12-04 | Spansion Llc | Memory device |
CN102169882B (zh) * | 2010-02-26 | 2015-02-25 | 苏州东微半导体有限公司 | 半导体存储器器件及其制造方法 |
US9489989B2 (en) | 2010-06-22 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Voltage regulators, memory circuits, and operating methods thereof |
WO2011162104A1 (en) * | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
TWI565001B (zh) * | 2010-07-28 | 2017-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
CN102376711B (zh) * | 2010-08-16 | 2015-08-05 | 苏州东微半导体有限公司 | 半导体存储器器件及其制造方法 |
US8228730B2 (en) * | 2010-08-31 | 2012-07-24 | Micron Technology, Inc. | Memory cell structures and methods |
CN102593064B (zh) * | 2012-03-11 | 2014-01-22 | 复旦大学 | 一种栅控二极管半导体存储器器件的制造方法 |
US9099492B2 (en) * | 2012-03-26 | 2015-08-04 | Globalfoundries Inc. | Methods of forming replacement gate structures with a recessed channel |
CN104103678A (zh) * | 2013-04-02 | 2014-10-15 | 苏州东微半导体有限公司 | 一种u形沟道的半导体器件及其制造方法 |
CN104103640B (zh) * | 2013-04-09 | 2017-02-01 | 苏州东微半导体有限公司 | 一种u形沟道的半导体器件及其制造方法 |
CN103247626A (zh) * | 2013-05-02 | 2013-08-14 | 复旦大学 | 一种半浮栅器件及其制造方法 |
CN104425522B (zh) * | 2013-09-10 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
CN104576665B (zh) * | 2013-10-25 | 2017-09-05 | 苏州东微半导体有限公司 | U形沟道半导体感光器件及其制造方法 |
CN103579126B (zh) * | 2013-11-06 | 2016-05-11 | 复旦大学 | 一种u型结构的半浮栅器件及其制造方法 |
CN104637945B (zh) * | 2013-11-08 | 2018-08-03 | 苏州东微半导体有限公司 | 半浮栅存储器及其制造方法和半浮栅存储器阵列 |
CN104979355B (zh) * | 2014-04-01 | 2018-08-03 | 苏州东微半导体有限公司 | 半浮栅存储器单元及半浮栅存储器阵列 |
CN105336622B (zh) * | 2014-07-30 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 半浮栅器件及其形成方法 |
CN104167450B (zh) * | 2014-08-17 | 2017-01-11 | 复旦大学 | 一种半浮栅功率器件 |
CN105118779B (zh) * | 2015-07-22 | 2018-05-11 | 上海华力集成电路制造有限公司 | 一种y型结构的半浮栅器件的制造方法 |
CN105070660B (zh) * | 2015-08-12 | 2019-01-22 | 上海华力微电子有限公司 | 一种∑型结构的半浮栅器件的制造方法 |
US9881926B1 (en) | 2016-10-24 | 2018-01-30 | International Business Machines Corporation | Static random access memory (SRAM) density scaling by using middle of line (MOL) flow |
CN109994497B (zh) * | 2019-03-27 | 2020-01-24 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
US11183242B1 (en) | 2020-05-18 | 2021-11-23 | Micron Technology, Inc. | Preventing parasitic current during program operations in memory |
EP4395490A1 (en) | 2022-04-02 | 2024-07-03 | Beijing Superstring Academy of Memory Technology | Semiconductor memory device and manufacturing method and read/write method therefor, and electronic device and memory circuit |
CN114709211B (zh) * | 2022-04-02 | 2022-11-15 | 北京超弦存储器研究院 | 动态存储器及其制作、读写方法、电子设备、存储电路 |
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- 2008-01-23 CN CN200810043070XA patent/CN101494222B/zh active Active
- 2008-10-09 US US12/285,619 patent/US8089801B2/en active Active
Patent Citations (1)
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CN1841753A (zh) * | 2005-03-29 | 2006-10-04 | 联华电子股份有限公司 | 单层多晶硅电可擦可编程只读存储器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9472561B2 (en) | 2013-09-06 | 2016-10-18 | Su Zhou Oriental Semiconductor Co., Ltd. | Manufacturing method for semi-floating gate device |
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CN101494222A (zh) | 2009-07-29 |
US20090185426A1 (en) | 2009-07-23 |
US8089801B2 (en) | 2012-01-03 |
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Effective date of registration: 20090612 Address after: Xinghu street in Suzhou City, Jiangsu Province Industrial Park No. 218 biological nano science and Technology Park Group C1 building B Applicant after: Suzhou Dongwei Semiconductor Co., Ltd. Address before: Room 102, room 1895, No. 49, Hualing Road, Baoshan District, Shanghai Applicant before: Pecky Wong Co-applicant before: Gong Die |
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Address after: 215125 building B, group C1, Biological Nanotechnology Park, 218 Xinghu street, Suzhou Industrial Park, Jiangsu Province Patentee after: Suzhou Dongwei Semiconductor Co.,Ltd. Address before: 215125 building B, group C1, Biological Nanotechnology Park, 218 Xinghu street, Suzhou Industrial Park, Jiangsu Province Patentee before: SU ZHOU ORIENTAL SEMICONDUCTOR Co.,Ltd. |
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