JP2011170951A5 - - Google Patents

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Publication number
JP2011170951A5
JP2011170951A5 JP2011008033A JP2011008033A JP2011170951A5 JP 2011170951 A5 JP2011170951 A5 JP 2011170951A5 JP 2011008033 A JP2011008033 A JP 2011008033A JP 2011008033 A JP2011008033 A JP 2011008033A JP 2011170951 A5 JP2011170951 A5 JP 2011170951A5
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JP
Japan
Prior art keywords
memory
transistor
redundant
memory cell
semiconductor
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JP2011008033A
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Japanese (ja)
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JP5695914B2 (ja
JP2011170951A (ja
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Publication of JP2011170951A5 publication Critical patent/JP2011170951A5/ja
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JP2011008033A 2010-01-20 2011-01-18 半導体装置 Expired - Fee Related JP5695914B2 (ja)

Priority Applications (1)

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JP2011008033A JP5695914B2 (ja) 2010-01-20 2011-01-18 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010010522 2010-01-20
JP2010010522 2010-01-20
JP2011008033A JP5695914B2 (ja) 2010-01-20 2011-01-18 半導体装置

Related Child Applications (1)

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JP2014221412A Division JP5913524B2 (ja) 2010-01-20 2014-10-30 半導体装置

Publications (3)

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JP2011170951A JP2011170951A (ja) 2011-09-01
JP2011170951A5 true JP2011170951A5 (enExample) 2014-01-16
JP5695914B2 JP5695914B2 (ja) 2015-04-08

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JP2011008033A Expired - Fee Related JP5695914B2 (ja) 2010-01-20 2011-01-18 半導体装置
JP2014221412A Active JP5913524B2 (ja) 2010-01-20 2014-10-30 半導体装置

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US (1) US8514642B2 (enExample)
JP (2) JP5695914B2 (enExample)
KR (1) KR101787734B1 (enExample)
TW (1) TWI525621B (enExample)
WO (1) WO2011089835A1 (enExample)

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JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
JP6773453B2 (ja) * 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
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US10490116B2 (en) * 2016-07-06 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and display system
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JP7467430B2 (ja) 2019-04-30 2024-04-15 株式会社半導体エネルギー研究所 記憶装置
JP7407203B2 (ja) 2019-05-17 2023-12-28 長江存儲科技有限責任公司 スタティックランダムアクセスメモリを有する３次元メモリデバイスのキャッシュプログラム動作
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JP7583722B2 (ja) 2019-08-09 2024-11-14 株式会社半導体エネルギー研究所 記憶装置
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JP7653416B2 (ja) * 2020-04-17 2025-03-28 株式会社半導体エネルギー研究所 半導体装置

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