KR101787734B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR101787734B1
KR101787734B1 KR1020127021125A KR20127021125A KR101787734B1 KR 101787734 B1 KR101787734 B1 KR 101787734B1 KR 1020127021125 A KR1020127021125 A KR 1020127021125A KR 20127021125 A KR20127021125 A KR 20127021125A KR 101787734 B1 KR101787734 B1 KR 101787734B1
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KR
South Korea
Prior art keywords
memory
transistor
memory cell
cell array
address information
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Expired - Fee Related
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KR1020127021125A
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English (en)
Korean (ko)
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KR20120115394A (ko
Inventor
준 고야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20120115394A publication Critical patent/KR20120115394A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
KR1020127021125A 2010-01-20 2010-12-21 반도체 기억 장치 Expired - Fee Related KR101787734B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-010522 2010-01-20
JP2010010522 2010-01-20
PCT/JP2010/073662 WO2011089835A1 (en) 2010-01-20 2010-12-21 Semiconductor memory device

Publications (2)

Publication Number Publication Date
KR20120115394A KR20120115394A (ko) 2012-10-17
KR101787734B1 true KR101787734B1 (ko) 2017-10-18

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KR1020127021125A Expired - Fee Related KR101787734B1 (ko) 2010-01-20 2010-12-21 반도체 기억 장치

Country Status (5)

Country Link
US (1) US8514642B2 (enExample)
JP (2) JP5695914B2 (enExample)
KR (1) KR101787734B1 (enExample)
TW (1) TWI525621B (enExample)
WO (1) WO2011089835A1 (enExample)

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WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096270A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US8767443B2 (en) * 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120120769A (ko) * 2011-04-25 2012-11-02 에스케이하이닉스 주식회사 메모리와 메모리 콘트롤러를 포함하는 메모리 시스템, 및 이의 동작방법
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP5378574B1 (ja) * 2012-06-13 2013-12-25 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9054678B2 (en) * 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9612795B2 (en) 2013-03-14 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Data processing device, data processing method, and computer program
TWI640014B (zh) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 記憶體裝置、半導體裝置及電子裝置
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6395143B2 (ja) * 2014-03-31 2018-09-26 株式会社三共 遊技機、遊技機のリサイクル方法及びデータ書込装置
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
JP6773453B2 (ja) * 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
WO2017068478A1 (en) 2015-10-22 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device including the semiconductor device
US10008502B2 (en) 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US10490116B2 (en) * 2016-07-06 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and display system
US11568229B2 (en) 2018-07-11 2023-01-31 Silicon Storage Technology, Inc. Redundant memory access for rows or columns containing faulty memory cells in analog neural memory in deep learning artificial neural network
WO2020222068A1 (ja) 2019-04-30 2020-11-05 株式会社半導体エネルギー研究所 冗長メモリセルを有する記憶装置、半導体装置、および、電子機器
CN110291631A (zh) 2019-05-17 2019-09-27 长江存储科技有限责任公司 具有静态随机存取存储器的三维存储器件
EP3909048B1 (en) 2019-05-17 2025-08-20 Yangtze Memory Technologies Co., Ltd. Cache program operation of three-dimensional memory device with static random-access memory
JP7583722B2 (ja) 2019-08-09 2024-11-14 株式会社半導体エネルギー研究所 記憶装置
TWI730725B (zh) * 2020-04-15 2021-06-11 力晶積成電子製造股份有限公司 半導體結構以及積體電路及半導體結構
CN115443505A (zh) * 2020-04-17 2022-12-06 株式会社半导体能源研究所 半导体装置

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JP2001189094A (ja) * 1999-12-28 2001-07-10 Toshiba Corp メモリ空間制御装置、半導体集積回路装置及び集積回路システム
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Also Published As

Publication number Publication date
US20110176377A1 (en) 2011-07-21
US8514642B2 (en) 2013-08-20
TW201203255A (en) 2012-01-16
JP2015053104A (ja) 2015-03-19
JP5695914B2 (ja) 2015-04-08
WO2011089835A1 (en) 2011-07-28
JP5913524B2 (ja) 2016-04-27
TWI525621B (zh) 2016-03-11
KR20120115394A (ko) 2012-10-17
JP2011170951A (ja) 2011-09-01

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