JP2005011490A5 - - Google Patents
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- Publication number
- JP2005011490A5 JP2005011490A5 JP2004129233A JP2004129233A JP2005011490A5 JP 2005011490 A5 JP2005011490 A5 JP 2005011490A5 JP 2004129233 A JP2004129233 A JP 2004129233A JP 2004129233 A JP2004129233 A JP 2004129233A JP 2005011490 A5 JP2005011490 A5 JP 2005011490A5
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- semiconductor device
- diffusion layer
- gate electrode
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 18
- 238000009792 diffusion process Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 4
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 claims 2
- 239000002784 hot electron Substances 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 235000003392 Curcuma domestica Nutrition 0.000 claims 1
- 244000008991 Curcuma longa Species 0.000 claims 1
- 235000003373 curcuma longa Nutrition 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 235000013976 turmeric Nutrition 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004129233A JP4593159B2 (ja) | 2003-05-28 | 2004-04-26 | 半導体装置 |
| US10/852,150 US8054680B2 (en) | 2003-05-28 | 2004-05-25 | Semiconductor device |
| TW093114807A TW200506952A (en) | 2003-05-28 | 2004-05-25 | Semiconductor device |
| CNA2004100455022A CN1574062A (zh) | 2003-05-28 | 2004-05-28 | 半导体器件 |
| KR1020040038120A KR20040103781A (ko) | 2003-05-28 | 2004-05-28 | 반도체 장치 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003150226 | 2003-05-28 | ||
| JP2004129233A JP4593159B2 (ja) | 2003-05-28 | 2004-04-26 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005011490A JP2005011490A (ja) | 2005-01-13 |
| JP2005011490A5 true JP2005011490A5 (enExample) | 2007-05-17 |
| JP4593159B2 JP4593159B2 (ja) | 2010-12-08 |
Family
ID=33566714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004129233A Expired - Fee Related JP4593159B2 (ja) | 2003-05-28 | 2004-04-26 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8054680B2 (enExample) |
| JP (1) | JP4593159B2 (enExample) |
| KR (1) | KR20040103781A (enExample) |
| CN (1) | CN1574062A (enExample) |
| TW (1) | TW200506952A (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007193862A (ja) * | 2006-01-17 | 2007-08-02 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP4965948B2 (ja) * | 2006-09-21 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5068053B2 (ja) * | 2006-10-02 | 2012-11-07 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
| JP2008270343A (ja) * | 2007-04-17 | 2008-11-06 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| JP5238208B2 (ja) | 2007-09-27 | 2013-07-17 | 株式会社東芝 | 不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置 |
| US7643349B2 (en) * | 2007-10-18 | 2010-01-05 | Macronix International Co., Ltd. | Efficient erase algorithm for SONOS-type NAND flash |
| JP5166095B2 (ja) * | 2008-03-31 | 2013-03-21 | 株式会社東芝 | 不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置 |
| US8432732B2 (en) | 2010-07-09 | 2013-04-30 | Sandisk Technologies Inc. | Detection of word-line leakage in memory arrays |
| US8514630B2 (en) | 2010-07-09 | 2013-08-20 | Sandisk Technologies Inc. | Detection of word-line leakage in memory arrays: current based approach |
| US8379454B2 (en) * | 2011-05-05 | 2013-02-19 | Sandisk Technologies Inc. | Detection of broken word-lines in memory arrays |
| US8775901B2 (en) | 2011-07-28 | 2014-07-08 | SanDisk Technologies, Inc. | Data recovery for defective word lines during programming of non-volatile memory arrays |
| US8750042B2 (en) | 2011-07-28 | 2014-06-10 | Sandisk Technologies Inc. | Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures |
| US8730722B2 (en) | 2012-03-02 | 2014-05-20 | Sandisk Technologies Inc. | Saving of data in cases of word-line to word-line short in memory arrays |
| US9165683B2 (en) | 2013-09-23 | 2015-10-20 | Sandisk Technologies Inc. | Multi-word line erratic programming detection |
| KR102170975B1 (ko) * | 2013-10-31 | 2020-10-28 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 불량 워드라인 탐지 방법 |
| US9443612B2 (en) | 2014-07-10 | 2016-09-13 | Sandisk Technologies Llc | Determination of bit line to low voltage signal shorts |
| US9484086B2 (en) | 2014-07-10 | 2016-11-01 | Sandisk Technologies Llc | Determination of word line to local source line shorts |
| US9514835B2 (en) | 2014-07-10 | 2016-12-06 | Sandisk Technologies Llc | Determination of word line to word line shorts between adjacent blocks |
| US9460809B2 (en) | 2014-07-10 | 2016-10-04 | Sandisk Technologies Llc | AC stress mode to screen out word line to word line shorts |
| US9202593B1 (en) | 2014-09-02 | 2015-12-01 | Sandisk Technologies Inc. | Techniques for detecting broken word lines in non-volatile memories |
| US9240249B1 (en) | 2014-09-02 | 2016-01-19 | Sandisk Technologies Inc. | AC stress methods to screen out bit line defects |
| US9449694B2 (en) | 2014-09-04 | 2016-09-20 | Sandisk Technologies Llc | Non-volatile memory with multi-word line select for defect detection operations |
| US9659666B2 (en) | 2015-08-31 | 2017-05-23 | Sandisk Technologies Llc | Dynamic memory recovery at the sub-block level |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3882469A (en) * | 1971-11-30 | 1975-05-06 | Texas Instruments Inc | Non-volatile variable threshold memory cell |
| JPH02137196A (ja) * | 1988-11-17 | 1990-05-25 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
| JP3123921B2 (ja) * | 1995-05-18 | 2001-01-15 | 三洋電機株式会社 | 半導体装置および不揮発性半導体メモリ |
| US6469343B1 (en) * | 1998-04-02 | 2002-10-22 | Nippon Steel Corporation | Multi-level type nonvolatile semiconductor memory device |
| JPH11134881A (ja) * | 1997-10-31 | 1999-05-21 | Sanyo Electric Co Ltd | 不揮発性多値メモリ装置及びそのデータの消去方法 |
| JP2000021181A (ja) * | 1998-06-30 | 2000-01-21 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
| KR100357644B1 (ko) * | 1999-02-19 | 2002-10-25 | 미쓰비시덴키 가부시키가이샤 | 비휘발성 반도체 기억장치 및 그 구동방법, 동작방법 및제조방법 |
| TW546840B (en) * | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
| JP3980874B2 (ja) * | 2001-11-30 | 2007-09-26 | スパンション エルエルシー | 半導体記憶装置及びその駆動方法 |
| JP2003257192A (ja) * | 2002-03-06 | 2003-09-12 | Mitsubishi Electric Corp | 半導体記憶装置および不揮発性半導体記憶装置 |
| KR100456596B1 (ko) * | 2002-05-08 | 2004-11-09 | 삼성전자주식회사 | 부유트랩형 비휘발성 기억소자의 소거 방법 |
| US6894931B2 (en) * | 2002-06-20 | 2005-05-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
| JP2004303918A (ja) * | 2003-03-31 | 2004-10-28 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
-
2004
- 2004-04-26 JP JP2004129233A patent/JP4593159B2/ja not_active Expired - Fee Related
- 2004-05-25 TW TW093114807A patent/TW200506952A/zh unknown
- 2004-05-25 US US10/852,150 patent/US8054680B2/en not_active Expired - Lifetime
- 2004-05-28 CN CNA2004100455022A patent/CN1574062A/zh active Pending
- 2004-05-28 KR KR1020040038120A patent/KR20040103781A/ko not_active Ceased
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