JP2006100531A5 - - Google Patents

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Publication number
JP2006100531A5
JP2006100531A5 JP2004284123A JP2004284123A JP2006100531A5 JP 2006100531 A5 JP2006100531 A5 JP 2006100531A5 JP 2004284123 A JP2004284123 A JP 2004284123A JP 2004284123 A JP2004284123 A JP 2004284123A JP 2006100531 A5 JP2006100531 A5 JP 2006100531A5
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JP
Japan
Prior art keywords
nonvolatile memory
semiconductor device
gate electrode
gate
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004284123A
Other languages
English (en)
Japanese (ja)
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JP2006100531A (ja
JP4795660B2 (ja
Filing date
Publication date
Priority claimed from JP2004284123A external-priority patent/JP4795660B2/ja
Priority to JP2004284123A priority Critical patent/JP4795660B2/ja
Application filed filed Critical
Priority to CNB2005100828003A priority patent/CN100552957C/zh
Priority to US11/181,721 priority patent/US7349250B2/en
Publication of JP2006100531A publication Critical patent/JP2006100531A/ja
Publication of JP2006100531A5 publication Critical patent/JP2006100531A5/ja
Priority to US12/020,393 priority patent/US7719052B2/en
Priority to US12/764,090 priority patent/US8576634B2/en
Publication of JP4795660B2 publication Critical patent/JP4795660B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004284123A 2004-09-29 2004-09-29 半導体装置 Expired - Lifetime JP4795660B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004284123A JP4795660B2 (ja) 2004-09-29 2004-09-29 半導体装置
CNB2005100828003A CN100552957C (zh) 2004-09-29 2005-07-07 一种半导体器件
US11/181,721 US7349250B2 (en) 2004-09-29 2005-07-15 Semiconductor device
US12/020,393 US7719052B2 (en) 2004-09-29 2008-01-25 Semiconductor device
US12/764,090 US8576634B2 (en) 2004-09-29 2010-04-20 Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004284123A JP4795660B2 (ja) 2004-09-29 2004-09-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007236437A Division JP4937866B2 (ja) 2007-09-12 2007-09-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2006100531A JP2006100531A (ja) 2006-04-13
JP2006100531A5 true JP2006100531A5 (enExample) 2007-11-01
JP4795660B2 JP4795660B2 (ja) 2011-10-19

Family

ID=36145061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004284123A Expired - Lifetime JP4795660B2 (ja) 2004-09-29 2004-09-29 半導体装置

Country Status (3)

Country Link
US (3) US7349250B2 (enExample)
JP (1) JP4795660B2 (enExample)
CN (1) CN100552957C (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557008B2 (en) * 2007-01-23 2009-07-07 Freescale Semiconductor, Inc. Method of making a non-volatile memory device
JP2009301600A (ja) * 2008-06-10 2009-12-24 Panasonic Corp 不揮発性半導体記憶装置および信号処理システム
JP2010282987A (ja) 2009-06-02 2010-12-16 Renesas Technology Corp 半導体装置およびその製造方法
CN103828048B (zh) * 2011-09-27 2017-03-01 惠普发展公司，有限责任合伙企业 单独和并行地选择eprom的电路
US9218881B2 (en) * 2012-10-23 2015-12-22 Sandisk Technologies Inc. Flash memory blocks with extended data retention
US10147784B2 (en) 2014-05-15 2018-12-04 Texas Instruments Incorporated High voltage galvanic isolation device
US9299697B2 (en) * 2014-05-15 2016-03-29 Texas Instruments Incorporated High breakdown voltage microelectronic device isolation structure with improved reliability
JP2016181312A (ja) 2015-03-23 2016-10-13 ルネサスエレクトロニクス株式会社 半導体装置およびその動作方法
JP2017045947A (ja) * 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2017053794A (ja) * 2015-09-11 2017-03-16 株式会社東芝 電気化学センサ
US9922986B2 (en) * 2016-05-16 2018-03-20 Globalfoundries Inc. Semiconductor structure including a plurality of pairs of nonvolatile memory cells and an edge cell and method for the formation thereof
WO2019133534A1 (en) * 2017-12-28 2019-07-04 Sunrise Memory Corporation 3-dimensional nor memory array with very fine pitch: device and method
US11222945B2 (en) 2017-12-29 2022-01-11 Texas Instruments Incorporated High voltage isolation structure and method
US11751391B2 (en) 2018-07-12 2023-09-05 Sunrise Memory Corporation Methods for fabricating a 3-dimensional memory structure of nor memory strings
US11937424B2 (en) 2020-08-31 2024-03-19 Sunrise Memory Corporation Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same
JP2022076545A (ja) * 2020-11-10 2022-05-20 ルネサスエレクトロニクス株式会社 半導体装置
JP7458960B2 (ja) 2020-11-10 2024-04-01 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419584A (en) 1987-07-15 1989-01-23 Hitachi Ltd Semiconductor memory device
JPS6419584U (enExample) 1987-07-28 1989-01-31
US5282161A (en) * 1990-12-31 1994-01-25 Sgs-Thomson Microelectronics S.R.L. Eeprom cell having a read interface isolated from the write/erase interface
EP0493640B1 (en) 1990-12-31 1995-04-19 STMicroelectronics S.r.l. EEPROM cell with single metal level gate having a (read) interface toward the external circuitry isolated from the (write/erase) interface toward the programming circuitry
JPH04337666A (ja) * 1991-05-14 1992-11-25 Citizen Watch Co Ltd 半導体不揮発性メモリとその書き込み方法
JPH0613627A (ja) * 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH05275657A (ja) * 1992-03-26 1993-10-22 Toshiba Corp 半導体記憶装置
KR0169419B1 (ko) 1995-09-28 1999-02-01 김광호 불휘발성 반도체 메모리의 독출방법 및 장치
US5845441A (en) * 1996-07-01 1998-12-08 Swartz; Paul D. Premanufactured portable concrete house
JP2977023B2 (ja) * 1996-09-30 1999-11-10 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
US5732017A (en) * 1997-03-31 1998-03-24 Atmel Corporation Combined program and data nonvolatile memory with concurrent program-read/data write capability
US6591327B1 (en) * 1999-06-22 2003-07-08 Silicon Storage Technology, Inc. Flash memory with alterable erase sector size
JP2001110185A (ja) * 1999-10-07 2001-04-20 Mitsubishi Electric Corp クロック同期型半導体記憶装置
JP3913971B2 (ja) 1999-12-16 2007-05-09 株式会社東芝 磁気メモリ装置
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
JP4530464B2 (ja) 2000-03-09 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路
JP4058232B2 (ja) 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
JP4083975B2 (ja) * 2000-12-11 2008-04-30 株式会社ルネサステクノロジ 半導体装置
JP2002237191A (ja) * 2001-02-13 2002-08-23 Seiko Instruments Inc 相補型不揮発性記憶回路
JP2003249578A (ja) 2001-09-29 2003-09-05 Toshiba Corp 半導体集積回路装置
US6925008B2 (en) 2001-09-29 2005-08-02 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistors
JP4370749B2 (ja) 2002-01-07 2009-11-25 ソニー株式会社 不揮発性半導体メモリ装置およびその動作方法
JP2004158084A (ja) * 2002-11-05 2004-06-03 Renesas Technology Corp 半導体集積回路装置
JP4601287B2 (ja) * 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US6815764B2 (en) 2003-03-17 2004-11-09 Samsung Electronics Co., Ltd. Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
JP3878573B2 (ja) 2003-04-16 2007-02-07 株式会社東芝 不揮発性半導体記憶装置
JP2005020349A (ja) * 2003-06-26 2005-01-20 Renesas Technology Corp 半導体集積回路および電子システム
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
JP2007005448A (ja) 2005-06-22 2007-01-11 Nec Electronics Corp 不揮発性半導体記憶装置
JP5191633B2 (ja) * 2006-04-04 2013-05-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5205011B2 (ja) * 2007-08-24 2013-06-05 ルネサスエレクトロニクス株式会社 不揮発性半導体装置およびその製造方法

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