JP4795660B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4795660B2
JP4795660B2 JP2004284123A JP2004284123A JP4795660B2 JP 4795660 B2 JP4795660 B2 JP 4795660B2 JP 2004284123 A JP2004284123 A JP 2004284123A JP 2004284123 A JP2004284123 A JP 2004284123A JP 4795660 B2 JP4795660 B2 JP 4795660B2
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JP
Japan
Prior art keywords
nonvolatile memory
gate electrode
gate
semiconductor device
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004284123A
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English (en)
Japanese (ja)
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JP2006100531A (ja
JP2006100531A5 (enExample
Inventor
文俊 伊藤
祥之 川嶋
健志 坂井
泰之 石井
恭弘 金丸
孝司 橋本
真 水野
幸裕 奥山
由起子 眞邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004284123A priority Critical patent/JP4795660B2/ja
Priority to CNB2005100828003A priority patent/CN100552957C/zh
Priority to US11/181,721 priority patent/US7349250B2/en
Publication of JP2006100531A publication Critical patent/JP2006100531A/ja
Publication of JP2006100531A5 publication Critical patent/JP2006100531A5/ja
Priority to US12/020,393 priority patent/US7719052B2/en
Priority to US12/764,090 priority patent/US8576634B2/en
Application granted granted Critical
Publication of JP4795660B2 publication Critical patent/JP4795660B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2004284123A 2004-09-29 2004-09-29 半導体装置 Expired - Lifetime JP4795660B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004284123A JP4795660B2 (ja) 2004-09-29 2004-09-29 半導体装置
CNB2005100828003A CN100552957C (zh) 2004-09-29 2005-07-07 一种半导体器件
US11/181,721 US7349250B2 (en) 2004-09-29 2005-07-15 Semiconductor device
US12/020,393 US7719052B2 (en) 2004-09-29 2008-01-25 Semiconductor device
US12/764,090 US8576634B2 (en) 2004-09-29 2010-04-20 Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004284123A JP4795660B2 (ja) 2004-09-29 2004-09-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007236437A Division JP4937866B2 (ja) 2007-09-12 2007-09-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2006100531A JP2006100531A (ja) 2006-04-13
JP2006100531A5 JP2006100531A5 (enExample) 2007-11-01
JP4795660B2 true JP4795660B2 (ja) 2011-10-19

Family

ID=36145061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004284123A Expired - Lifetime JP4795660B2 (ja) 2004-09-29 2004-09-29 半導体装置

Country Status (3)

Country Link
US (3) US7349250B2 (enExample)
JP (1) JP4795660B2 (enExample)
CN (1) CN100552957C (enExample)

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US7557008B2 (en) * 2007-01-23 2009-07-07 Freescale Semiconductor, Inc. Method of making a non-volatile memory device
JP2009301600A (ja) * 2008-06-10 2009-12-24 Panasonic Corp 不揮発性半導体記憶装置および信号処理システム
JP2010282987A (ja) 2009-06-02 2010-12-16 Renesas Technology Corp 半導体装置およびその製造方法
CN103828048B (zh) * 2011-09-27 2017-03-01 惠普发展公司，有限责任合伙企业 单独和并行地选择eprom的电路
US9218881B2 (en) * 2012-10-23 2015-12-22 Sandisk Technologies Inc. Flash memory blocks with extended data retention
US10147784B2 (en) 2014-05-15 2018-12-04 Texas Instruments Incorporated High voltage galvanic isolation device
US9299697B2 (en) * 2014-05-15 2016-03-29 Texas Instruments Incorporated High breakdown voltage microelectronic device isolation structure with improved reliability
JP2016181312A (ja) 2015-03-23 2016-10-13 ルネサスエレクトロニクス株式会社 半導体装置およびその動作方法
JP2017045947A (ja) * 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2017053794A (ja) * 2015-09-11 2017-03-16 株式会社東芝 電気化学センサ
US9922986B2 (en) * 2016-05-16 2018-03-20 Globalfoundries Inc. Semiconductor structure including a plurality of pairs of nonvolatile memory cells and an edge cell and method for the formation thereof
WO2019133534A1 (en) * 2017-12-28 2019-07-04 Sunrise Memory Corporation 3-dimensional nor memory array with very fine pitch: device and method
US11222945B2 (en) 2017-12-29 2022-01-11 Texas Instruments Incorporated High voltage isolation structure and method
US11751391B2 (en) 2018-07-12 2023-09-05 Sunrise Memory Corporation Methods for fabricating a 3-dimensional memory structure of nor memory strings
US11937424B2 (en) 2020-08-31 2024-03-19 Sunrise Memory Corporation Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same
JP2022076545A (ja) * 2020-11-10 2022-05-20 ルネサスエレクトロニクス株式会社 半導体装置
JP7458960B2 (ja) 2020-11-10 2024-04-01 ルネサスエレクトロニクス株式会社 半導体装置

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JPS6419584A (en) 1987-07-15 1989-01-23 Hitachi Ltd Semiconductor memory device
JPS6419584U (enExample) 1987-07-28 1989-01-31
US5282161A (en) * 1990-12-31 1994-01-25 Sgs-Thomson Microelectronics S.R.L. Eeprom cell having a read interface isolated from the write/erase interface
EP0493640B1 (en) 1990-12-31 1995-04-19 STMicroelectronics S.r.l. EEPROM cell with single metal level gate having a (read) interface toward the external circuitry isolated from the (write/erase) interface toward the programming circuitry
JPH04337666A (ja) * 1991-05-14 1992-11-25 Citizen Watch Co Ltd 半導体不揮発性メモリとその書き込み方法
JPH0613627A (ja) * 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH05275657A (ja) * 1992-03-26 1993-10-22 Toshiba Corp 半導体記憶装置
KR0169419B1 (ko) 1995-09-28 1999-02-01 김광호 불휘발성 반도체 메모리의 독출방법 및 장치
US5845441A (en) * 1996-07-01 1998-12-08 Swartz; Paul D. Premanufactured portable concrete house
JP2977023B2 (ja) * 1996-09-30 1999-11-10 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
US5732017A (en) * 1997-03-31 1998-03-24 Atmel Corporation Combined program and data nonvolatile memory with concurrent program-read/data write capability
US6591327B1 (en) * 1999-06-22 2003-07-08 Silicon Storage Technology, Inc. Flash memory with alterable erase sector size
JP2001110185A (ja) * 1999-10-07 2001-04-20 Mitsubishi Electric Corp クロック同期型半導体記憶装置
JP3913971B2 (ja) 1999-12-16 2007-05-09 株式会社東芝 磁気メモリ装置
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
JP4530464B2 (ja) 2000-03-09 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路
JP4058232B2 (ja) 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
JP4083975B2 (ja) * 2000-12-11 2008-04-30 株式会社ルネサステクノロジ 半導体装置
JP2002237191A (ja) * 2001-02-13 2002-08-23 Seiko Instruments Inc 相補型不揮発性記憶回路
JP2003249578A (ja) 2001-09-29 2003-09-05 Toshiba Corp 半導体集積回路装置
US6925008B2 (en) 2001-09-29 2005-08-02 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with a memory unit including not more than two memory cell transistors
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JP2004158084A (ja) * 2002-11-05 2004-06-03 Renesas Technology Corp 半導体集積回路装置
JP4601287B2 (ja) * 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US6815764B2 (en) 2003-03-17 2004-11-09 Samsung Electronics Co., Ltd. Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same
JP3878573B2 (ja) 2003-04-16 2007-02-07 株式会社東芝 不揮発性半導体記憶装置
JP2005020349A (ja) * 2003-06-26 2005-01-20 Renesas Technology Corp 半導体集積回路および電子システム
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
JP2007005448A (ja) 2005-06-22 2007-01-11 Nec Electronics Corp 不揮発性半導体記憶装置
JP5191633B2 (ja) * 2006-04-04 2013-05-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5205011B2 (ja) * 2007-08-24 2013-06-05 ルネサスエレクトロニクス株式会社 不揮発性半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2006100531A (ja) 2006-04-13
US20080151629A1 (en) 2008-06-26
CN100552957C (zh) 2009-10-21
US20060077713A1 (en) 2006-04-13
US7349250B2 (en) 2008-03-25
US20100202205A1 (en) 2010-08-12
US8576634B2 (en) 2013-11-05
US7719052B2 (en) 2010-05-18
CN1755934A (zh) 2006-04-05

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