JP2017224666A5 - - Google Patents
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- Publication number
- JP2017224666A5 JP2017224666A5 JP2016117617A JP2016117617A JP2017224666A5 JP 2017224666 A5 JP2017224666 A5 JP 2017224666A5 JP 2016117617 A JP2016117617 A JP 2016117617A JP 2016117617 A JP2016117617 A JP 2016117617A JP 2017224666 A5 JP2017224666 A5 JP 2017224666A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- semiconductor device
- protrusion
- source
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 24
- 229910021332 silicide Inorganic materials 0.000 claims description 20
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000010438 heat treatment Methods 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 229910021334 nickel silicide Inorganic materials 0.000 claims 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000002784 hot electron Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016117617A JP6652451B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置およびその製造方法 |
| US15/482,239 US9899403B2 (en) | 2016-06-14 | 2017-04-07 | Semiconductor device and method of manufacturing the same |
| CN201710356508.9A CN107507864B (zh) | 2016-06-14 | 2017-05-19 | 半导体器件及其制造方法 |
| TW106118450A TW201810677A (zh) | 2016-06-14 | 2017-06-05 | 半導體裝置及其製造方法 |
| US15/879,257 US10229925B2 (en) | 2016-06-14 | 2018-01-24 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016117617A JP6652451B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017224666A JP2017224666A (ja) | 2017-12-21 |
| JP2017224666A5 true JP2017224666A5 (enExample) | 2018-12-27 |
| JP6652451B2 JP6652451B2 (ja) | 2020-02-26 |
Family
ID=60574221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016117617A Active JP6652451B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9899403B2 (enExample) |
| JP (1) | JP6652451B2 (enExample) |
| CN (1) | CN107507864B (enExample) |
| TW (1) | TW201810677A (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10163901B1 (en) * | 2017-06-23 | 2018-12-25 | Globalfoundries Singapore Pte. Ltd. | Method and device for embedding flash memory and logic integration in FinFET technology |
| US10700207B2 (en) * | 2017-11-30 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device integrating backside power grid and related integrated circuit and fabrication method |
| DE102018127448B4 (de) | 2017-11-30 | 2023-06-22 | Taiwan Semiconductor Manufacturing Co. Ltd. | Metallschienenleiter für nicht-planare Halbleiter-Bauelemente |
| JP2019117855A (ja) * | 2017-12-27 | 2019-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2019117913A (ja) * | 2017-12-27 | 2019-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6920192B2 (ja) * | 2017-12-28 | 2021-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US10515954B2 (en) * | 2018-03-18 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having fin structures of varying dimensions |
| US10312247B1 (en) * | 2018-03-22 | 2019-06-04 | Silicon Storage Technology, Inc. | Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication |
| JP6998267B2 (ja) * | 2018-05-08 | 2022-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7053388B2 (ja) * | 2018-06-28 | 2022-04-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN110828380B (zh) * | 2018-08-14 | 2022-06-17 | 中芯国际集成电路制造(上海)有限公司 | 静态存储单元的形成方法及静态存储单元 |
| CN110828460B (zh) * | 2018-08-14 | 2022-07-19 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其形成方法 |
| US11195923B2 (en) * | 2018-12-21 | 2021-12-07 | Applied Materials, Inc. | Method of fabricating a semiconductor device having reduced contact resistance |
| JP7232081B2 (ja) * | 2019-03-01 | 2023-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7200054B2 (ja) * | 2019-06-24 | 2023-01-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2021027096A (ja) * | 2019-08-01 | 2021-02-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR102624201B1 (ko) * | 2019-09-06 | 2024-01-15 | 에스케이하이닉스 주식회사 | 저항 변화 메모리층을 구비하는 비휘발성 메모리 장치 |
| CN112490128B (zh) * | 2019-09-12 | 2024-11-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
| US20220051905A1 (en) * | 2020-08-12 | 2022-02-17 | Tokyo Electron Limited | Formation of low-temperature and high-temperature in-situ doped source and drain epitaxy using selective heating for wrap-around contact and vertically stacked device architectures |
| CN114334817A (zh) * | 2020-09-30 | 2022-04-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335945B2 (en) * | 2003-12-26 | 2008-02-26 | Electronics And Telecommunications Research Institute | Multi-gate MOS transistor and method of manufacturing the same |
| KR100532353B1 (ko) * | 2004-03-11 | 2005-11-30 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터 및 그 제조방법 |
| JP2006041354A (ja) | 2004-07-29 | 2006-02-09 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP2006066564A (ja) * | 2004-08-26 | 2006-03-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR100672826B1 (ko) * | 2004-12-03 | 2007-01-22 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터 및 그 제조방법 |
| KR100645065B1 (ko) * | 2005-06-23 | 2006-11-10 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터와 이를 구비하는 비휘발성 메모리장치 및 그 형성 방법 |
| JP4921755B2 (ja) * | 2005-09-16 | 2012-04-25 | 株式会社東芝 | 半導体装置 |
| JP4791868B2 (ja) * | 2006-03-28 | 2011-10-12 | 株式会社東芝 | Ｆｉｎ−ＮＡＮＤ型フラッシュメモリ |
| KR100745766B1 (ko) * | 2006-06-23 | 2007-08-02 | 삼성전자주식회사 | 네 개의 스토리지 노드막을 구비하는 비휘발성 메모리 소자및 그 동작 방법 |
| US8068370B2 (en) * | 2008-04-18 | 2011-11-29 | Macronix International Co., Ltd. | Floating gate memory device with interpoly charge trapping structure |
| JP5305969B2 (ja) * | 2009-02-17 | 2013-10-02 | 株式会社東芝 | 半導体装置 |
| US20110001169A1 (en) | 2009-07-01 | 2011-01-06 | International Business Machines Corporation | Forming uniform silicide on 3d structures |
| JP5538975B2 (ja) | 2010-03-29 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2012234885A (ja) * | 2011-04-28 | 2012-11-29 | Toshiba Corp | 半導体装置及びその製造方法 |
| US9129827B2 (en) * | 2012-04-13 | 2015-09-08 | Intel Corporation | Conversion of strain-inducing buffer to electrical insulator |
| US8716803B2 (en) * | 2012-10-04 | 2014-05-06 | Flashsilicon Incorporation | 3-D single floating gate non-volatile memory device |
| US9299840B2 (en) * | 2013-03-08 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
| US20150194433A1 (en) * | 2014-01-08 | 2015-07-09 | Broadcom Corporation | Gate substantial contact based one-time programmable device |
| JP2015185613A (ja) * | 2014-03-20 | 2015-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN106030812B (zh) * | 2014-03-27 | 2019-09-24 | 英特尔公司 | 锗锡沟道晶体管 |
| KR102248475B1 (ko) * | 2014-09-19 | 2021-05-06 | 인텔 코포레이션 | 인듐 풍부 표면들을 갖는 인듐 갈륨 비화물 활성 채널을 생성하는 장치 및 방법 |
| KR102245133B1 (ko) * | 2014-10-13 | 2021-04-28 | 삼성전자 주식회사 | 이종 게이트 구조의 finFET를 구비한 반도체 소자 및 그 제조방법 |
| US10002876B2 (en) * | 2014-10-29 | 2018-06-19 | International Business Machines Corporation | FinFET vertical flash memory |
| KR102217246B1 (ko) * | 2014-11-12 | 2021-02-18 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
-
2016
- 2016-06-14 JP JP2016117617A patent/JP6652451B2/ja active Active
-
2017
- 2017-04-07 US US15/482,239 patent/US9899403B2/en active Active
- 2017-05-19 CN CN201710356508.9A patent/CN107507864B/zh active Active
- 2017-06-05 TW TW106118450A patent/TW201810677A/zh unknown
-
2018
- 2018-01-24 US US15/879,257 patent/US10229925B2/en active Active
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