CN107507864B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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CN107507864B
CN107507864B CN201710356508.9A CN201710356508A CN107507864B CN 107507864 B CN107507864 B CN 107507864B CN 201710356508 A CN201710356508 A CN 201710356508A CN 107507864 B CN107507864 B CN 107507864B
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gate electrode
film
protrusion
region
insulating film
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CN107507864A (zh
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山口直
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
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JP7053388B2 (ja) * 2018-06-28 2022-04-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN110828380B (zh) * 2018-08-14 2022-06-17 中芯国际集成电路制造(上海)有限公司 静态存储单元的形成方法及静态存储单元
CN110828460B (zh) * 2018-08-14 2022-07-19 中芯国际集成电路制造(北京)有限公司 半导体器件及其形成方法
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JP7232081B2 (ja) * 2019-03-01 2023-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7200054B2 (ja) * 2019-06-24 2023-01-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2021027096A (ja) * 2019-08-01 2021-02-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102624201B1 (ko) * 2019-09-06 2024-01-15 에스케이하이닉스 주식회사 저항 변화 메모리층을 구비하는 비휘발성 메모리 장치
CN112490128B (zh) * 2019-09-12 2024-11-19 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
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CN114334817A (zh) * 2020-09-30 2022-04-12 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

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