TW201810677A - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
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- TW201810677A TW201810677A TW106118450A TW106118450A TW201810677A TW 201810677 A TW201810677 A TW 201810677A TW 106118450 A TW106118450 A TW 106118450A TW 106118450 A TW106118450 A TW 106118450A TW 201810677 A TW201810677 A TW 201810677A
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
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- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Applications Claiming Priority (2)
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| JP2016117617A JP6652451B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置およびその製造方法 |
| JP2016-117617 | 2016-06-14 |
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| TW201810677A true TW201810677A (zh) | 2018-03-16 |
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| JP (1) | JP6652451B2 (enExample) |
| CN (1) | CN107507864B (enExample) |
| TW (1) | TW201810677A (enExample) |
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| US10163901B1 (en) * | 2017-06-23 | 2018-12-25 | Globalfoundries Singapore Pte. Ltd. | Method and device for embedding flash memory and logic integration in FinFET technology |
| US10700207B2 (en) * | 2017-11-30 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device integrating backside power grid and related integrated circuit and fabrication method |
| DE102018127448B4 (de) | 2017-11-30 | 2023-06-22 | Taiwan Semiconductor Manufacturing Co. Ltd. | Metallschienenleiter für nicht-planare Halbleiter-Bauelemente |
| JP2019117855A (ja) * | 2017-12-27 | 2019-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2019117913A (ja) * | 2017-12-27 | 2019-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6920192B2 (ja) * | 2017-12-28 | 2021-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US10515954B2 (en) * | 2018-03-18 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having fin structures of varying dimensions |
| US10312247B1 (en) * | 2018-03-22 | 2019-06-04 | Silicon Storage Technology, Inc. | Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication |
| JP6998267B2 (ja) * | 2018-05-08 | 2022-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7053388B2 (ja) * | 2018-06-28 | 2022-04-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN110828380B (zh) * | 2018-08-14 | 2022-06-17 | 中芯国际集成电路制造(上海)有限公司 | 静态存储单元的形成方法及静态存储单元 |
| CN110828460B (zh) * | 2018-08-14 | 2022-07-19 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其形成方法 |
| US11195923B2 (en) * | 2018-12-21 | 2021-12-07 | Applied Materials, Inc. | Method of fabricating a semiconductor device having reduced contact resistance |
| JP7232081B2 (ja) * | 2019-03-01 | 2023-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP7200054B2 (ja) * | 2019-06-24 | 2023-01-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2021027096A (ja) * | 2019-08-01 | 2021-02-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR102624201B1 (ko) * | 2019-09-06 | 2024-01-15 | 에스케이하이닉스 주식회사 | 저항 변화 메모리층을 구비하는 비휘발성 메모리 장치 |
| CN112490128B (zh) * | 2019-09-12 | 2024-11-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
| US20220051905A1 (en) * | 2020-08-12 | 2022-02-17 | Tokyo Electron Limited | Formation of low-temperature and high-temperature in-situ doped source and drain epitaxy using selective heating for wrap-around contact and vertically stacked device architectures |
| CN114334817A (zh) * | 2020-09-30 | 2022-04-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
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| US7335945B2 (en) * | 2003-12-26 | 2008-02-26 | Electronics And Telecommunications Research Institute | Multi-gate MOS transistor and method of manufacturing the same |
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| JP2006041354A (ja) | 2004-07-29 | 2006-02-09 | Renesas Technology Corp | 半導体装置及びその製造方法 |
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| KR100672826B1 (ko) * | 2004-12-03 | 2007-01-22 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터 및 그 제조방법 |
| KR100645065B1 (ko) * | 2005-06-23 | 2006-11-10 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터와 이를 구비하는 비휘발성 메모리장치 및 그 형성 방법 |
| JP4921755B2 (ja) * | 2005-09-16 | 2012-04-25 | 株式会社東芝 | 半導体装置 |
| JP4791868B2 (ja) * | 2006-03-28 | 2011-10-12 | 株式会社東芝 | Ｆｉｎ−ＮＡＮＤ型フラッシュメモリ |
| KR100745766B1 (ko) * | 2006-06-23 | 2007-08-02 | 삼성전자주식회사 | 네 개의 스토리지 노드막을 구비하는 비휘발성 메모리 소자및 그 동작 방법 |
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| JP5305969B2 (ja) * | 2009-02-17 | 2013-10-02 | 株式会社東芝 | 半導体装置 |
| US20110001169A1 (en) | 2009-07-01 | 2011-01-06 | International Business Machines Corporation | Forming uniform silicide on 3d structures |
| JP5538975B2 (ja) | 2010-03-29 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2012234885A (ja) * | 2011-04-28 | 2012-11-29 | Toshiba Corp | 半導体装置及びその製造方法 |
| US9129827B2 (en) * | 2012-04-13 | 2015-09-08 | Intel Corporation | Conversion of strain-inducing buffer to electrical insulator |
| US8716803B2 (en) * | 2012-10-04 | 2014-05-06 | Flashsilicon Incorporation | 3-D single floating gate non-volatile memory device |
| US9299840B2 (en) * | 2013-03-08 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
| US20150194433A1 (en) * | 2014-01-08 | 2015-07-09 | Broadcom Corporation | Gate substantial contact based one-time programmable device |
| JP2015185613A (ja) * | 2014-03-20 | 2015-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN106030812B (zh) * | 2014-03-27 | 2019-09-24 | 英特尔公司 | 锗锡沟道晶体管 |
| KR102248475B1 (ko) * | 2014-09-19 | 2021-05-06 | 인텔 코포레이션 | 인듐 풍부 표면들을 갖는 인듐 갈륨 비화물 활성 채널을 생성하는 장치 및 방법 |
| KR102245133B1 (ko) * | 2014-10-13 | 2021-04-28 | 삼성전자 주식회사 | 이종 게이트 구조의 finFET를 구비한 반도체 소자 및 그 제조방법 |
| US10002876B2 (en) * | 2014-10-29 | 2018-06-19 | International Business Machines Corporation | FinFET vertical flash memory |
| KR102217246B1 (ko) * | 2014-11-12 | 2021-02-18 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
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2016
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2017
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- 2017-06-05 TW TW106118450A patent/TW201810677A/zh unknown
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2018
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| JP2017224666A (ja) | 2017-12-21 |
| JP6652451B2 (ja) | 2020-02-26 |
| US9899403B2 (en) | 2018-02-20 |
| US20180166459A1 (en) | 2018-06-14 |
| CN107507864B (zh) | 2022-09-20 |
| US20170358592A1 (en) | 2017-12-14 |
| US10229925B2 (en) | 2019-03-12 |
| CN107507864A (zh) | 2017-12-22 |
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