JP6652451B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP6652451B2
JP6652451B2 JP2016117617A JP2016117617A JP6652451B2 JP 6652451 B2 JP6652451 B2 JP 6652451B2 JP 2016117617 A JP2016117617 A JP 2016117617A JP 2016117617 A JP2016117617 A JP 2016117617A JP 6652451 B2 JP6652451 B2 JP 6652451B2
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film
gate electrode
region
semiconductor device
insulating film
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JP2017224666A5 (enExample
JP2017224666A (ja
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直 山口
直 山口
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2016117617A priority Critical patent/JP6652451B2/ja
Priority to US15/482,239 priority patent/US9899403B2/en
Priority to CN201710356508.9A priority patent/CN107507864B/zh
Priority to TW106118450A priority patent/TW201810677A/zh
Publication of JP2017224666A publication Critical patent/JP2017224666A/ja
Priority to US15/879,257 priority patent/US10229925B2/en
Publication of JP2017224666A5 publication Critical patent/JP2017224666A5/ja
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  • Semiconductor Memories (AREA)
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  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2016117617A 2016-06-14 2016-06-14 半導体装置およびその製造方法 Active JP6652451B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016117617A JP6652451B2 (ja) 2016-06-14 2016-06-14 半導体装置およびその製造方法
US15/482,239 US9899403B2 (en) 2016-06-14 2017-04-07 Semiconductor device and method of manufacturing the same
CN201710356508.9A CN107507864B (zh) 2016-06-14 2017-05-19 半导体器件及其制造方法
TW106118450A TW201810677A (zh) 2016-06-14 2017-06-05 半導體裝置及其製造方法
US15/879,257 US10229925B2 (en) 2016-06-14 2018-01-24 Semiconductor device and method of manufacturing the same

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JP2016117617A JP6652451B2 (ja) 2016-06-14 2016-06-14 半導体装置およびその製造方法

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JP2017224666A JP2017224666A (ja) 2017-12-21
JP2017224666A5 JP2017224666A5 (enExample) 2018-12-27
JP6652451B2 true JP6652451B2 (ja) 2020-02-26

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JP (1) JP6652451B2 (enExample)
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US10163901B1 (en) * 2017-06-23 2018-12-25 Globalfoundries Singapore Pte. Ltd. Method and device for embedding flash memory and logic integration in FinFET technology
DE102018127448B4 (de) 2017-11-30 2023-06-22 Taiwan Semiconductor Manufacturing Co. Ltd. Metallschienenleiter für nicht-planare Halbleiter-Bauelemente
US10700207B2 (en) 2017-11-30 2020-06-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device integrating backside power grid and related integrated circuit and fabrication method
JP2019117913A (ja) * 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2019117855A (ja) * 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6920192B2 (ja) * 2017-12-28 2021-08-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10515954B2 (en) * 2018-03-18 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having fin structures of varying dimensions
US10312247B1 (en) * 2018-03-22 2019-06-04 Silicon Storage Technology, Inc. Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication
JP6998267B2 (ja) * 2018-05-08 2022-01-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7053388B2 (ja) * 2018-06-28 2022-04-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN110828380B (zh) * 2018-08-14 2022-06-17 中芯国际集成电路制造(上海)有限公司 静态存储单元的形成方法及静态存储单元
CN110828460B (zh) * 2018-08-14 2022-07-19 中芯国际集成电路制造(北京)有限公司 半导体器件及其形成方法
US11195923B2 (en) * 2018-12-21 2021-12-07 Applied Materials, Inc. Method of fabricating a semiconductor device having reduced contact resistance
JP7232081B2 (ja) * 2019-03-01 2023-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7200054B2 (ja) * 2019-06-24 2023-01-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2021027096A (ja) * 2019-08-01 2021-02-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102624201B1 (ko) * 2019-09-06 2024-01-15 에스케이하이닉스 주식회사 저항 변화 메모리층을 구비하는 비휘발성 메모리 장치
CN112490128B (zh) * 2019-09-12 2024-11-19 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
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