CN1574062A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1574062A
CN1574062A CNA2004100455022A CN200410045502A CN1574062A CN 1574062 A CN1574062 A CN 1574062A CN A2004100455022 A CNA2004100455022 A CN A2004100455022A CN 200410045502 A CN200410045502 A CN 200410045502A CN 1574062 A CN1574062 A CN 1574062A
Authority
CN
China
Prior art keywords
memory cell
writing
erasing
semiconductor device
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004100455022A
Other languages
English (en)
Chinese (zh)
Inventor
松崎望
石丸哲也
水野真
桥本孝司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Publication of CN1574062A publication Critical patent/CN1574062A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/107—Programming all cells in an array, sector or block to the same state prior to flash erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNA2004100455022A 2003-05-28 2004-05-28 半导体器件 Pending CN1574062A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP150226/2003 2003-05-28
JP2003150226 2003-05-28
JP2004129233A JP4593159B2 (ja) 2003-05-28 2004-04-26 半導体装置
JP129233/2004 2004-04-26

Publications (1)

Publication Number Publication Date
CN1574062A true CN1574062A (zh) 2005-02-02

Family

ID=33566714

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004100455022A Pending CN1574062A (zh) 2003-05-28 2004-05-28 半导体器件

Country Status (5)

Country Link
US (1) US8054680B2 (enExample)
JP (1) JP4593159B2 (enExample)
KR (1) KR20040103781A (enExample)
CN (1) CN1574062A (enExample)
TW (1) TW200506952A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101692350B (zh) * 2007-10-18 2012-02-15 旺宏电子股份有限公司 硅-氧化物-氮化物-氧化物-硅型与非门闪存的擦除法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007193862A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 不揮発性半導体記憶装置
JP4965948B2 (ja) * 2006-09-21 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
JP5068053B2 (ja) * 2006-10-02 2012-11-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置およびその動作方法
JP2008270343A (ja) * 2007-04-17 2008-11-06 Renesas Technology Corp 不揮発性半導体記憶装置
JP5238208B2 (ja) 2007-09-27 2013-07-17 株式会社東芝 不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置
JP5166095B2 (ja) * 2008-03-31 2013-03-21 株式会社東芝 不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8379454B2 (en) * 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
KR102170975B1 (ko) * 2013-10-31 2020-10-28 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 불량 워드라인 탐지 방법
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882469A (en) * 1971-11-30 1975-05-06 Texas Instruments Inc Non-volatile variable threshold memory cell
JPH02137196A (ja) * 1988-11-17 1990-05-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5408115A (en) * 1994-04-04 1995-04-18 Motorola Inc. Self-aligned, split-gate EEPROM device
JP3123921B2 (ja) * 1995-05-18 2001-01-15 三洋電機株式会社 半導体装置および不揮発性半導体メモリ
US6469343B1 (en) * 1998-04-02 2002-10-22 Nippon Steel Corporation Multi-level type nonvolatile semiconductor memory device
JPH11134881A (ja) * 1997-10-31 1999-05-21 Sanyo Electric Co Ltd 不揮発性多値メモリ装置及びそのデータの消去方法
JP2000021181A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
KR100357644B1 (ko) * 1999-02-19 2002-10-25 미쓰비시덴키 가부시키가이샤 비휘발성 반도체 기억장치 및 그 구동방법, 동작방법 및제조방법
TW546840B (en) * 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
JP3980874B2 (ja) * 2001-11-30 2007-09-26 スパンション エルエルシー 半導体記憶装置及びその駆動方法
JP2003257192A (ja) * 2002-03-06 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置および不揮発性半導体記憶装置
KR100456596B1 (ko) * 2002-05-08 2004-11-09 삼성전자주식회사 부유트랩형 비휘발성 기억소자의 소거 방법
US6894931B2 (en) * 2002-06-20 2005-05-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP2004303918A (ja) * 2003-03-31 2004-10-28 Renesas Technology Corp 半導体装置の製造方法および半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101692350B (zh) * 2007-10-18 2012-02-15 旺宏电子股份有限公司 硅-氧化物-氮化物-氧化物-硅型与非门闪存的擦除法

Also Published As

Publication number Publication date
US8054680B2 (en) 2011-11-08
JP2005011490A (ja) 2005-01-13
JP4593159B2 (ja) 2010-12-08
TW200506952A (en) 2005-02-16
US20050006698A1 (en) 2005-01-13
KR20040103781A (ko) 2004-12-09

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C06 Publication
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SE01 Entry into force of request for substantive examination
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Owner name: RENESAS ELECTRONICS CORPORATION

Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP.

Effective date: 20101019

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: TOKYO TO, JAPAN TO: KANAGAWA PREFECTURE, JAPAN

TA01 Transfer of patent application right

Effective date of registration: 20101019

Address after: Kanagawa

Applicant after: Renesas Electronics Corporation

Address before: Tokyo, Japan, Japan

Applicant before: Renesas Technology Corp.

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20050202