JP5459999B2 - 不揮発性半導体記憶素子、不揮発性半導体装置及び不揮発性半導体素子の動作方法 - Google Patents
不揮発性半導体記憶素子、不揮発性半導体装置及び不揮発性半導体素子の動作方法 Download PDFInfo
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- JP5459999B2 JP5459999B2 JP2008206291A JP2008206291A JP5459999B2 JP 5459999 B2 JP5459999 B2 JP 5459999B2 JP 2008206291 A JP2008206291 A JP 2008206291A JP 2008206291 A JP2008206291 A JP 2008206291A JP 5459999 B2 JP5459999 B2 JP 5459999B2
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- 239000004065 semiconductor Substances 0.000 title claims description 185
- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 53
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 50
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 39
- 229920005591 polysilicon Polymers 0.000 claims description 39
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 239000000470 constituent Substances 0.000 claims description 18
- 230000006870 function Effects 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 101100445369 Solanum lycopersicum EOT1 gene Proteins 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
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- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910003855 HfAlO Inorganic materials 0.000 description 5
- 229910004129 HfSiO Inorganic materials 0.000 description 5
- 229910006501 ZrSiO Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 229910010052 TiAlO Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910007875 ZrAlO Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
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Description
図1は、本発明の第1の実施形態に係わる不揮発性半導体記憶素子を示す断面図である。ここで、不揮発性半導体記憶素子とは、不揮発性半導体記憶装置の構成要素となる個々の部品で、独立した固有の機能をもっているものである。また、不揮発性半導体装置とは、不揮発性半導体記憶素子を複数含む装置でものである。
以下では、上部絶縁層6、即ち、透過絶縁層6a、電荷捕獲層6b、ブロック層6cの材料について説明する。上部絶縁層6に関して、電荷捕獲層6bの電子トラップ準位密度は、ブロック層6c及び透過絶縁層6aのトラップ準位密度と比べて大きい材料を用いる。
ここで、EOT1,EOT2,EOT3はそれぞれ透過絶縁層6a、電荷捕獲層6b、ブロック層6cの酸化膜換算膜厚である。そして、εSiをSiの誘電率、各膜の膜厚、誘電率をそれぞれTn、εnとすると、酸化膜換算膜厚EOTnは、以下の関係式で与えられる。
また、2層以上の積層膜の場合は、酸化膜換算膜厚EOTnは、以下の関係式で与えられる。
また、φ、ψ、Vpassはそれぞれ導電性電荷蓄積層5の仕事関数あるいは電子親和力、真空準位を基準とした電荷捕獲層6aのトラップ準位、NAND型フラッシュメモリの読み出し時に、読み出しセルと同一ビットライン上の非選択セルに与えられた最も大きな電圧である。
ここで、読み出し時の電圧印加による電荷捕獲層6bのトラップ準位のエネルギー変化Vrは、上部絶縁層6に印加される電圧をVIPDとするとき、電荷捕獲層6b/ブロック層6c界面において以下の(式5)で与えられる最大値をとる。
(式4)に(式5)を代入し、
φ-(ψ+(EOT1+EOT2)/(EOT1+EOT2+EOT3)×VIPD)>0 (式6)
が得られる。
φ-(ψ+(EOT1+EOT2)/(EOT1+EOT2+EOT3)×Vpass)>0 (式7)
が得られる。なお、Vpassは0Vを上回り、かつ10V以下の範囲とする。
(EOT1+EOT2)/(EOT1+EOT2+EOT3)<(φ-ψ)/Vpass (式8)
またEOTn(n=1〜3)>0であることから、
0<(EOT1+EOT2)/(EOT1+EOT2+EOT3)<(φ-ψ)/Vpass (式9)
となる。
図3は、本発明の第2の実施形態に係わる不揮発性半導体記憶素子を示す断面図である。
また、制御ゲート7、導電性電荷蓄積層5の材料としては、第1の実施形態と同様の材料を用いる。
図5は、本発明の第3の実施形態に係る不揮発性半導体記憶素子を示す断面図である。
ここで、EOT1,EOT2,はそれぞれ透過絶縁層36a、電荷捕獲層36bの酸化膜換算膜厚である。また、EOTtotalは、トンネル絶縁膜4、非導電性電荷蓄積層35、上部絶縁層36の酸化膜換算膜厚の総和である。また、Veraseは、消去動作時の半導体基板1と制御ゲート7の電位差である。また、φ、ψは、それぞれ、制御ゲート7の仕事関数、真空準位を基準とした電荷捕獲層36bのトラップ準位を示す。
一方、消去動作時においては電子を電荷捕獲層36のトラップ準位に捕獲する必要があるために、消去動作時においては、制御ゲート7の仕事関数が、電荷捕獲層36bのトラップ準位を上回ることが好ましい。したがって、消去バイアスにおける電荷捕獲層36bのトラップ準位の電圧降下の最大値をVfとするとき、以下の関係式を満たすことが好ましい。
ここで、消去バイアスによる電荷捕獲層36bのトラップ準位の電圧降下の最大値Vfは、消去動作時のチャネル領域と制御ゲート7の電位差をVeraseとするとき、以下の関係式で与えられる。
(式12)、(式13)、(式14)より、
0<φ-ψ≦(EOT1+EOT2)/(EOTtotal)×Verase (式15)
となる。
図7は、本発明の第4の実施形態に係る不揮発性半導体記憶素子を示す断面図である。
なお、本実施形態の不揮発性半導体記憶素子の製造プロセスは、電荷捕獲層46b上に制御ゲート7を形成し、電荷捕獲層46b上に透過絶縁層を形成しない点で第3の実施形態の製造プロセスと異なる以外は同じである。
図8は、本発明の第5の実施形態に係る不揮発性半導体記憶装置にかかるNAND型フラッシュメモリを示すブロック図である。図8に示されるように、本実施形態にかかる不揮発性半導体記憶装置は、例えば、第1の実施形態にかかる不揮発性半導体記憶素子が配列されて形成されたメモリセルアレイ51と、前記不揮発性半導体記憶素子にデータが書き込まれた後に、デトラップパルスをメモリセルの制御ゲート7に供給して、上部絶縁層6から電荷を引き抜くデトラップパルス供給回路59とを具備したことを特徴とする。
2・・・n+型ソース領域
3・・・n+型ドレイン領域
4・・・トンネル絶縁膜
5・・・導電性電荷蓄積層
6、26、36、46・・・上部絶縁層
6a、36a・・・透過絶縁層
6b、26b、36b、46b・・・電荷捕獲層
6c、26c、36c、46c・・・ブロック層
7・・・制御ゲート
35・・・非導電性電荷蓄積層
51・・・メモリセルアレイ
52・・・ロウデコーダ
53・・・カラムデコーダ
54・・・カラムセレクタ
55・・・センスアンプ&ラッチ回路
56・・・読み出し出力回路
57・・・書き込み入力回路
58・・・書き込み/制御回路
59・・・デトラップパルス供給回路
60・・・NANDセルユニット
Claims (19)
- 半導体基板と、
前記半導体基板の表面内に、チャネル領域を挟んで互いに離間して設けられたソース領域及びドレイン領域と、
前記チャネル領域上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられたポリシリコン層と、
前記ポリシリコン層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた制御ゲートとを備え、
前記第2の絶縁膜は、第1絶縁層、第2絶縁層と第3絶縁層とを含む積層構造であり、
前記第3絶縁層と前記第2絶縁層との間に前記第1絶縁層が配置され、
前記第3絶縁層は前記第2絶縁膜よりも前記半導体基板側に配置され、
前記第1絶縁層は、前記第2絶縁層の構成元素及びHfを含む膜であり、
前記第1絶縁層のトラップ準位密度が、前記第2絶縁層のトラップ準位密度と比べて大きく、前記第3絶縁層の膜厚は、前記第2絶縁層の膜厚と比べて薄いことを特徴とする不揮発性半導体記憶素子。 - 半導体基板と、
前記半導体基板の表面内に、チャネル領域を挟んで互いに離間して設けられたソース領域及びドレイン領域と、
前記チャネル領域上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられたポリシリコン層と、
前記ポリシリコン層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた制御ゲートとを備え、
前記第2の絶縁膜は、第1絶縁層、第2絶縁層と第3絶縁層とを含む積層構造であり、
前記第3絶縁層と前記第2絶縁層との間に前記第1絶縁層が配置され、
前記第3絶縁層は前記第2絶縁膜よりも前記半導体基板側に配置され、
前記第2絶縁層は、SiO2膜、SiON膜、SiN膜、Al2O3膜、LaAlSiO膜、又はこれらの膜を積層した膜を含み、前記第1絶縁層は前記第2絶縁層の構成元素及びHfを含む膜であり、前記第3絶縁層の膜厚は、前記第2絶縁層の膜厚と比べて薄いことを特徴とする不揮発性半導体記憶素子。 - 前記第2絶縁層は、SiO2膜、SiON膜、SiN膜、Al2O3膜、LaAlSiO膜、又はこれらの膜を積層した膜を含むことを特徴とする請求項1記載の不揮発性半導体記憶素子。
- 前記第1絶縁層は、前記第2絶縁層と同一構成元素から成る膜を含み、かつ、前記第1絶縁層の構成元素の組成比が、前記第2絶縁層の構成元素の組成比と比べて化学量論比との差異が大きい組成比であることを特徴とする請求項1乃至請求項3にいずれかに記載の不揮発性半導体記憶素子。
- 前記第1絶縁層は、SiN膜を含むことを特徴とする請求項1、又は請求項3記載の不揮発性半導体記憶素子。
- 前記第1絶縁層は、前記第2絶縁層の構成元素及びZrを含む膜であることを特徴とする請求項1、又は請求項3記載の不揮発性半導体記憶素子。
- 前記第1絶縁層は、Ti、Y、Zr、若しくはHfの酸化物、窒化物、又は酸窒化物からなる膜を含むことを特徴とする請求項1、又は請求項3記載の不揮発性半導体記憶素子。
- 前記第3絶縁層のトラップ準位密度は、前記第1絶縁層のトラップ準位密度と比べて小さいことを特徴とする請求項1又は請求項2記載の不揮発性半導体記憶素子。
- 前記第3絶縁層は、前記第1絶縁層と同一構成元素から成る膜を含み、かつ、前記第3絶縁層の構成元素の組成比が、前記第1絶縁層の構成元素の組成比と比べて化学量論比からの差異が小さい組成比であることを特徴とする請求項1、2または8のいずれかに記載の不揮発性半導体記憶素子。
- 前記第3絶縁層は、前記第2絶縁層と同一の材料から成る膜であることを特徴とする請求項1、2、8または9のいずれかに記載の不揮発性半導体素子。
- 前記第3絶縁層は、SiO2を含む層、または、SiO2の酸素原子の一部を窒素で置換した膜であることを特徴とする請求項1乃至請求項10いずれか1項記載の不揮発性半導体記憶素子。
- 前記ポリシリコン層は不純物が高濃度にドープされた導電層であり、
前記第1絶縁層は、前記第2絶縁層と、前記ポリシリコン層との間に設けられることを特徴とする請求項1乃至請求項11いずれか1項記載の不揮発性半導体記憶素子。 - 前記ポリシリコン層に代えて非導電性のシリコン窒化膜層を有し、
前記第1絶縁層は、前記第2絶縁層と、前記制御ゲートとの間に設けられることを特徴とする請求項1乃至請求項11いずれか1項記載の不揮発性半導体記憶素子。 - メモリセルアレイを構成する複数の請求項1乃至請求項12いずれか1項記載の不揮発性半導体記憶素子において、
読み出し時において読み出しが行われない前記不揮発性半導体記憶素子の前記制御ゲートへ印加される電圧をVpass、
前記不揮発性半導体記憶素子の前記ポリシリコン層の仕事関数あるいは電子親和力をφ、
前記不揮発性半導体記憶素子の前記第1絶縁層の真空準位を基準としたトラップ準位をψ、
前記第3絶縁層、前記第1絶縁層、前記第2絶縁層の酸化膜換算膜厚をそれぞれEOT1、EOT2、EOT3とするとき、
0<(EOT1+EOT2)/(EOT1+EOT2+EOT3)<(φ-ψ)/Vpass
の関係を満たすことを特徴とする不揮発性半導体記憶素子。 - 請求項13に記載の不揮発性半導体記憶素子において、
消去時における前記制御ゲートと基板間の電圧をVerase、
前記不揮発性半導体記憶素子の前記制御ゲートの仕事関数、又は電子親和力をφ、
前記不揮発性半導体記憶素子の前記第1絶縁層の真空準位を基準としたトラップ準位をψ、
前記第3絶縁層、前記第1絶縁層の酸化膜換算膜厚をそれぞれ、EOT1、EOT2、
前記第1の絶縁膜、前記シリコン窒化膜層、前記第2の絶縁膜の酸化膜換算膜厚の和をEOTtotalとするとき、
0<φ-ψ≦(EOT1+EOT2)/(EOTtotal)×Verase
の関係を満たすことを特徴とする不揮発性半導体記憶素子。 - 複数の請求項1乃至請求項12、又は請求項14いずれか1項記載の不揮発性半導体記憶素子が配列されたメモリセルアレイと、
前記ポリシリコン層にデータが書き込まれた後に、デトラップパルスを前記制御ゲートに印加して、前記第1絶縁層から電荷を引き抜くデトラップパルス供給回路とを具備することを特徴とする不揮発性半導体記憶装置。 - 請求項13、又は請求項15に記載の不揮発性半導体記憶素子が配列されたメモリセルアレイと、
前記シリコン窒化膜層からデータを消去後に、デトラップパルスを前記制御ゲートに印加して、前記第1絶縁層から電荷を引き抜くデトラップパルス供給回路とを具備することを特徴とする不揮発性半導体記憶装置。 - 請求項1乃至請求項12、又は請求項14いずれか1項記載の不揮発性半導体記憶素子の動作方法であって、
前記制御ゲートと前記半導体基板間に第2の極性の電圧を印加することにより前記第2の極性とは逆の極性の第1の極性の電荷を半導体基板から前記ポリシリコン層に注入するとともに第1の極性の電荷を前記第1絶縁層にトラップさせる工程と、
前記制御ゲートと前記半導体基板間に、第1の極性の電圧を印加することにより前記第1絶縁層にトラップされた第1の極性の電荷を前記第1絶縁層から前記ポリシリコン層へ放出する工程とを有することを特徴とする不揮発性半導体記憶素子の動作方法。 - 請求項13、又は請求項15に記載の不揮発性半導体記憶素子の動作方法であって、
前記制御ゲートと前記半導体基板間に第1の極性の電圧を印加することにより第1の極性の電荷を前記シリコン窒化膜層から前記半導体基板へ放出するとともに第1の極性の電荷を前記第1絶縁層にトラップさせる工程と、
前記制御ゲートと前記半導体基板間に、前記第1の極性とは逆の極性の第2の極性の電圧を印加することにより前記第1絶縁層にトラップされた第1の極性の電荷を前記第1絶縁層から前記制御ゲートへ放出する工程とを有することを特徴とする不揮発性半導体記憶素子の動作方法。
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JP2008098510A (ja) * | 2006-10-13 | 2008-04-24 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR100890040B1 (ko) * | 2006-10-23 | 2009-03-25 | 주식회사 하이닉스반도체 | 전하트랩층을 갖는 불휘발성 메모리소자 및 그 제조방법 |
JP4855958B2 (ja) * | 2007-01-25 | 2012-01-18 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP4372174B2 (ja) | 2007-03-28 | 2009-11-25 | 株式会社東芝 | 不揮発性半導体メモリ及びその製造方法 |
JP5238208B2 (ja) | 2007-09-27 | 2013-07-17 | 株式会社東芝 | 不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置 |
JP5166095B2 (ja) | 2008-03-31 | 2013-03-21 | 株式会社東芝 | 不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置 |
JP5459650B2 (ja) | 2008-09-22 | 2014-04-02 | 株式会社東芝 | 不揮発性半導体記憶装置のメモリセル |
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US20150187792A1 (en) | 2015-07-02 |
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US20100034023A1 (en) | 2010-02-11 |
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US20150194520A1 (en) | 2015-07-09 |
US9620653B2 (en) | 2017-04-11 |
US8058681B2 (en) | 2011-11-15 |
US20140001536A1 (en) | 2014-01-02 |
US20160104802A1 (en) | 2016-04-14 |
US20130010535A1 (en) | 2013-01-10 |
US9246014B2 (en) | 2016-01-26 |
US9252290B2 (en) | 2016-02-02 |
US9012978B2 (en) | 2015-04-21 |
US20130343122A1 (en) | 2013-12-26 |
US8987809B2 (en) | 2015-03-24 |
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