JP2007142448A5 - - Google Patents
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- Publication number
- JP2007142448A5 JP2007142448A5 JP2007000919A JP2007000919A JP2007142448A5 JP 2007142448 A5 JP2007142448 A5 JP 2007142448A5 JP 2007000919 A JP2007000919 A JP 2007000919A JP 2007000919 A JP2007000919 A JP 2007000919A JP 2007142448 A5 JP2007142448 A5 JP 2007142448A5
- Authority
- JP
- Japan
- Prior art keywords
- drain
- vsub
- source
- charge storage
- storage layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000002784 hot electron Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 239000002159 nanocrystal Substances 0.000 claims 2
- 239000000615 nonconductor Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000005641 tunneling Effects 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007000919A JP4113559B2 (ja) | 2004-11-01 | 2007-01-09 | 不揮発性半導体記憶装置およびその書込方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004318333 | 2004-11-01 | ||
| JP2007000919A JP4113559B2 (ja) | 2004-11-01 | 2007-01-09 | 不揮発性半導体記憶装置およびその書込方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005014780A Division JP3962769B2 (ja) | 2004-11-01 | 2005-01-21 | 不揮発性半導体記憶装置およびその書込方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007142448A JP2007142448A (ja) | 2007-06-07 |
| JP2007142448A5 true JP2007142448A5 (enExample) | 2008-03-06 |
| JP4113559B2 JP4113559B2 (ja) | 2008-07-09 |
Family
ID=38204842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007000919A Expired - Fee Related JP4113559B2 (ja) | 2004-11-01 | 2007-01-09 | 不揮発性半導体記憶装置およびその書込方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4113559B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08140508A (ja) * | 1994-11-25 | 1996-06-04 | Norin Suisansyo Sochi Shikenjo | 潅水自動制御装置 |
| JP2010079977A (ja) * | 2008-09-25 | 2010-04-08 | Toppan Printing Co Ltd | 定電流型電源回路を有する不揮発性半導体メモリ装置 |
| US8837219B2 (en) | 2011-09-30 | 2014-09-16 | Ememory Technology Inc. | Method of programming nonvolatile memory |
| JP2013218758A (ja) | 2012-04-06 | 2013-10-24 | Genusion:Kk | 不揮発性半導体記憶装置 |
| JP5853853B2 (ja) | 2012-05-09 | 2016-02-09 | 富士通セミコンダクター株式会社 | 半導体記憶装置及びその駆動方法 |
-
2007
- 2007-01-09 JP JP2007000919A patent/JP4113559B2/ja not_active Expired - Fee Related
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