JP4881552B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4881552B2
JP4881552B2 JP2004261751A JP2004261751A JP4881552B2 JP 4881552 B2 JP4881552 B2 JP 4881552B2 JP 2004261751 A JP2004261751 A JP 2004261751A JP 2004261751 A JP2004261751 A JP 2004261751A JP 4881552 B2 JP4881552 B2 JP 4881552B2
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JP
Japan
Prior art keywords
semiconductor device
misfet
well
gate electrode
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004261751A
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English (en)
Japanese (ja)
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JP2006080247A5 (enExample
JP2006080247A (ja
Inventor
和佳 志波
泰弘 谷口
保志 岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
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Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004261751A priority Critical patent/JP4881552B2/ja
Priority to TW094116894A priority patent/TWI424532B/zh
Priority to US11/206,968 priority patent/US7313026B2/en
Priority to KR1020050076135A priority patent/KR101067093B1/ko
Publication of JP2006080247A publication Critical patent/JP2006080247A/ja
Publication of JP2006080247A5 publication Critical patent/JP2006080247A5/ja
Priority to US11/925,106 priority patent/US7466599B2/en
Priority to US12/270,346 priority patent/US20090154253A1/en
Application granted granted Critical
Publication of JP4881552B2 publication Critical patent/JP4881552B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2004261751A 2004-09-09 2004-09-09 半導体装置 Expired - Fee Related JP4881552B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004261751A JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置
TW094116894A TWI424532B (zh) 2004-09-09 2005-05-24 半導體裝置
US11/206,968 US7313026B2 (en) 2004-09-09 2005-08-19 Semiconductor device
KR1020050076135A KR101067093B1 (ko) 2004-09-09 2005-08-19 반도체 장치
US11/925,106 US7466599B2 (en) 2004-09-09 2007-10-26 Semiconductor device
US12/270,346 US20090154253A1 (en) 2004-09-09 2008-11-13 semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004261751A JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2006080247A JP2006080247A (ja) 2006-03-23
JP2006080247A5 JP2006080247A5 (enExample) 2007-10-18
JP4881552B2 true JP4881552B2 (ja) 2012-02-22

Family

ID=35996040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004261751A Expired - Fee Related JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置

Country Status (4)

Country Link
US (3) US7313026B2 (enExample)
JP (1) JP4881552B2 (enExample)
KR (1) KR101067093B1 (enExample)
TW (1) TWI424532B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
JP4800109B2 (ja) * 2005-09-13 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2007123830A (ja) * 2005-09-29 2007-05-17 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
KR100735753B1 (ko) * 2005-10-04 2007-07-06 삼성전자주식회사 공유된 비트라인을 갖는 플래쉬 메모리 소자 및 그의제조방법
JP4901325B2 (ja) 2006-06-22 2012-03-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5228195B2 (ja) * 2007-04-20 2013-07-03 インターチップ株式会社 不揮発性メモリ内蔵シフトレジスタ
US8072035B2 (en) 2007-06-11 2011-12-06 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP5280716B2 (ja) * 2007-06-11 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI358067B (en) * 2007-12-19 2012-02-11 Powerchip Technology Corp Integrated circuits and discharge circuits
US7639536B2 (en) * 2008-03-07 2009-12-29 United Microelectronics Corp. Storage unit of single-conductor non-volatile memory cell and method of erasing the same
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2010087357A (ja) * 2008-10-01 2010-04-15 Toshiba Corp 不揮発性半導体記憶装置
US10046141B2 (en) 2008-12-30 2018-08-14 Biosense Webster, Inc. Deflectable sheath introducer
KR20110047819A (ko) * 2009-10-30 2011-05-09 주식회사 하이닉스반도체 반도체 장치의 단위 블록 회로
CA2789440C (en) * 2010-03-10 2020-03-24 Probiodrug Ag Heterocyclic inhibitors of glutaminyl cyclase (qc, ec 2.3.2.5)
US8958245B2 (en) 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
US9042174B2 (en) 2010-06-17 2015-05-26 Ememory Technology Inc. Non-volatile memory cell
JP5705053B2 (ja) * 2011-07-26 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2013102119A (ja) * 2011-11-07 2013-05-23 Ememory Technology Inc 不揮発性メモリーセル
US9361982B2 (en) * 2014-02-04 2016-06-07 Stmicroelectronics S.R.L. Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
US20250063728A1 (en) * 2023-08-15 2025-02-20 Ememory Technology Inc. Antifuse-type one time programming memory and associated bias voltage control method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3083547B2 (ja) 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
DE4311358C2 (de) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
JPH07240473A (ja) * 1994-03-01 1995-09-12 Fujitsu Ltd 半導体記憶装置およびその製造方法
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5892709A (en) * 1997-05-09 1999-04-06 Motorola, Inc. Single level gate nonvolatile memory device and method for accessing the same
JP4212178B2 (ja) * 1999-03-12 2009-01-21 株式会社東芝 半導体集積回路の製造方法
JP2002541669A (ja) * 1999-03-31 2002-12-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性メモリセルを有する半導体デバイス
JP2001185633A (ja) * 1999-12-15 2001-07-06 Texas Instr Inc <Ti> Ｅｅｐｒｏｍデバイス
JP4072300B2 (ja) 1999-12-22 2008-04-09 日本特殊陶業株式会社 セラミック積層構造の配線基板
JP4530464B2 (ja) * 2000-03-09 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
US6788574B1 (en) * 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell
FR2838554B1 (fr) * 2002-04-15 2004-07-09 St Microelectronics Sa Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
CN1669155A (zh) 2002-05-09 2005-09-14 伊皮杰有限公司 伪非易失性直接隧穿浮栅器件
JP3957561B2 (ja) * 2002-05-24 2007-08-15 株式会社リコー 半導体装置
JP4601287B2 (ja) * 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム

Also Published As

Publication number Publication date
TWI424532B (zh) 2014-01-21
US7313026B2 (en) 2007-12-25
US20080056011A1 (en) 2008-03-06
TW200610101A (en) 2006-03-16
US20090154253A1 (en) 2009-06-18
US20060050566A1 (en) 2006-03-09
KR20060053161A (ko) 2006-05-19
KR101067093B1 (ko) 2011-09-22
US7466599B2 (en) 2008-12-16
JP2006080247A (ja) 2006-03-23

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