TWI424532B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI424532B
TWI424532B TW094116894A TW94116894A TWI424532B TW I424532 B TWI424532 B TW I424532B TW 094116894 A TW094116894 A TW 094116894A TW 94116894 A TW94116894 A TW 94116894A TW I424532 B TWI424532 B TW I424532B
Authority
TW
Taiwan
Prior art keywords
misfet
gate
volatile memory
semiconductor device
data
Prior art date
Application number
TW094116894A
Other languages
English (en)
Chinese (zh)
Other versions
TW200610101A (en
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200610101A publication Critical patent/TW200610101A/zh
Application granted granted Critical
Publication of TWI424532B publication Critical patent/TWI424532B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW094116894A 2004-09-09 2005-05-24 半導體裝置 TWI424532B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004261751A JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置

Publications (2)

Publication Number Publication Date
TW200610101A TW200610101A (en) 2006-03-16
TWI424532B true TWI424532B (zh) 2014-01-21

Family

ID=35996040

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116894A TWI424532B (zh) 2004-09-09 2005-05-24 半導體裝置

Country Status (4)

Country Link
US (3) US7313026B2 (enExample)
JP (1) JP4881552B2 (enExample)
KR (1) KR101067093B1 (enExample)
TW (1) TWI424532B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
JP4800109B2 (ja) * 2005-09-13 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2007123830A (ja) * 2005-09-29 2007-05-17 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
KR100735753B1 (ko) * 2005-10-04 2007-07-06 삼성전자주식회사 공유된 비트라인을 갖는 플래쉬 메모리 소자 및 그의제조방법
JP4901325B2 (ja) 2006-06-22 2012-03-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5228195B2 (ja) * 2007-04-20 2013-07-03 インターチップ株式会社 不揮発性メモリ内蔵シフトレジスタ
US8072035B2 (en) 2007-06-11 2011-12-06 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP5280716B2 (ja) * 2007-06-11 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI358067B (en) * 2007-12-19 2012-02-11 Powerchip Technology Corp Integrated circuits and discharge circuits
US7639536B2 (en) * 2008-03-07 2009-12-29 United Microelectronics Corp. Storage unit of single-conductor non-volatile memory cell and method of erasing the same
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2010087357A (ja) * 2008-10-01 2010-04-15 Toshiba Corp 不揮発性半導体記憶装置
US10046141B2 (en) 2008-12-30 2018-08-14 Biosense Webster, Inc. Deflectable sheath introducer
KR20110047819A (ko) * 2009-10-30 2011-05-09 주식회사 하이닉스반도체 반도체 장치의 단위 블록 회로
CA2789440C (en) * 2010-03-10 2020-03-24 Probiodrug Ag Heterocyclic inhibitors of glutaminyl cyclase (qc, ec 2.3.2.5)
US8958245B2 (en) 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
US9042174B2 (en) 2010-06-17 2015-05-26 Ememory Technology Inc. Non-volatile memory cell
JP5705053B2 (ja) * 2011-07-26 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2013102119A (ja) * 2011-11-07 2013-05-23 Ememory Technology Inc 不揮発性メモリーセル
US9361982B2 (en) * 2014-02-04 2016-06-07 Stmicroelectronics S.R.L. Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
US20250063728A1 (en) * 2023-08-15 2025-02-20 Ememory Technology Inc. Antifuse-type one time programming memory and associated bias voltage control method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610854A (en) * 1994-03-01 1997-03-11 Fujitsu Limited Semiconductor memory device and fabrication process thereof
JP2001185633A (ja) * 1999-12-15 2001-07-06 Texas Instr Inc <Ti> Ｅｅｐｒｏｍデバイス
JP2001257324A (ja) * 2000-03-09 2001-09-21 Hitachi Ltd 半導体集積回路
TW563229B (en) * 2000-07-12 2003-11-21 Chartered Semicoductor Mfg Ltd Flash memory cell structure with improved channel punch-through characteristics
US6788574B1 (en) * 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3083547B2 (ja) 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
DE4311358C2 (de) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5892709A (en) * 1997-05-09 1999-04-06 Motorola, Inc. Single level gate nonvolatile memory device and method for accessing the same
JP4212178B2 (ja) * 1999-03-12 2009-01-21 株式会社東芝 半導体集積回路の製造方法
JP2002541669A (ja) * 1999-03-31 2002-12-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性メモリセルを有する半導体デバイス
JP4072300B2 (ja) 1999-12-22 2008-04-09 日本特殊陶業株式会社 セラミック積層構造の配線基板
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
FR2838554B1 (fr) * 2002-04-15 2004-07-09 St Microelectronics Sa Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
CN1669155A (zh) 2002-05-09 2005-09-14 伊皮杰有限公司 伪非易失性直接隧穿浮栅器件
JP3957561B2 (ja) * 2002-05-24 2007-08-15 株式会社リコー 半導体装置
JP4601287B2 (ja) * 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610854A (en) * 1994-03-01 1997-03-11 Fujitsu Limited Semiconductor memory device and fabrication process thereof
JP2001185633A (ja) * 1999-12-15 2001-07-06 Texas Instr Inc <Ti> Ｅｅｐｒｏｍデバイス
JP2001257324A (ja) * 2000-03-09 2001-09-21 Hitachi Ltd 半導体集積回路
TW563229B (en) * 2000-07-12 2003-11-21 Chartered Semicoductor Mfg Ltd Flash memory cell structure with improved channel punch-through characteristics
US6788574B1 (en) * 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell

Also Published As

Publication number Publication date
US7313026B2 (en) 2007-12-25
US20080056011A1 (en) 2008-03-06
TW200610101A (en) 2006-03-16
US20090154253A1 (en) 2009-06-18
US20060050566A1 (en) 2006-03-09
JP4881552B2 (ja) 2012-02-22
KR20060053161A (ko) 2006-05-19
KR101067093B1 (ko) 2011-09-22
US7466599B2 (en) 2008-12-16
JP2006080247A (ja) 2006-03-23

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