KR101067093B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR101067093B1
KR101067093B1 KR1020050076135A KR20050076135A KR101067093B1 KR 101067093 B1 KR101067093 B1 KR 101067093B1 KR 1020050076135 A KR1020050076135 A KR 1020050076135A KR 20050076135 A KR20050076135 A KR 20050076135A KR 101067093 B1 KR101067093 B1 KR 101067093B1
Authority
KR
South Korea
Prior art keywords
well
data
misfet
nonvolatile memory
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050076135A
Other languages
English (en)
Korean (ko)
Other versions
KR20060053161A (ko
Inventor
가즈요시 시바
야스히로 다니구찌
야스시 오까
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 르네사스 일렉트로닉스 가부시키가이샤 filed Critical 르네사스 일렉트로닉스 가부시키가이샤
Publication of KR20060053161A publication Critical patent/KR20060053161A/ko
Application granted granted Critical
Publication of KR101067093B1 publication Critical patent/KR101067093B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020050076135A 2004-09-09 2005-08-19 반도체 장치 Expired - Fee Related KR101067093B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00261751 2004-09-09
JP2004261751A JP4881552B2 (ja) 2004-09-09 2004-09-09 半導体装置

Publications (2)

Publication Number Publication Date
KR20060053161A KR20060053161A (ko) 2006-05-19
KR101067093B1 true KR101067093B1 (ko) 2011-09-22

Family

ID=35996040

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050076135A Expired - Fee Related KR101067093B1 (ko) 2004-09-09 2005-08-19 반도체 장치

Country Status (4)

Country Link
US (3) US7313026B2 (enExample)
JP (1) JP4881552B2 (enExample)
KR (1) KR101067093B1 (enExample)
TW (1) TWI424532B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
JP4800109B2 (ja) * 2005-09-13 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2007123830A (ja) * 2005-09-29 2007-05-17 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
KR100735753B1 (ko) * 2005-10-04 2007-07-06 삼성전자주식회사 공유된 비트라인을 갖는 플래쉬 메모리 소자 및 그의제조방법
JP4901325B2 (ja) 2006-06-22 2012-03-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5228195B2 (ja) * 2007-04-20 2013-07-03 インターチップ株式会社 不揮発性メモリ内蔵シフトレジスタ
US8072035B2 (en) 2007-06-11 2011-12-06 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP5280716B2 (ja) * 2007-06-11 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI358067B (en) * 2007-12-19 2012-02-11 Powerchip Technology Corp Integrated circuits and discharge circuits
US7639536B2 (en) * 2008-03-07 2009-12-29 United Microelectronics Corp. Storage unit of single-conductor non-volatile memory cell and method of erasing the same
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2010087357A (ja) * 2008-10-01 2010-04-15 Toshiba Corp 不揮発性半導体記憶装置
US10046141B2 (en) 2008-12-30 2018-08-14 Biosense Webster, Inc. Deflectable sheath introducer
KR20110047819A (ko) * 2009-10-30 2011-05-09 주식회사 하이닉스반도체 반도체 장치의 단위 블록 회로
CA2789440C (en) * 2010-03-10 2020-03-24 Probiodrug Ag Heterocyclic inhibitors of glutaminyl cyclase (qc, ec 2.3.2.5)
US8958245B2 (en) 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
US9042174B2 (en) 2010-06-17 2015-05-26 Ememory Technology Inc. Non-volatile memory cell
JP5705053B2 (ja) * 2011-07-26 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2013102119A (ja) * 2011-11-07 2013-05-23 Ememory Technology Inc 不揮発性メモリーセル
US9361982B2 (en) * 2014-02-04 2016-06-07 Stmicroelectronics S.R.L. Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
US20250063728A1 (en) * 2023-08-15 2025-02-20 Ememory Technology Inc. Antifuse-type one time programming memory and associated bias voltage control method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030161192A1 (en) 2000-09-12 2003-08-28 Toshio Kobayashi Nonvolatile semiconductor memory device and methods for operating and producing the same
US20040155234A1 (en) 2002-12-26 2004-08-12 Renesas Technology Corp. Nonvolatile semiconductor memory device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3083547B2 (ja) 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
DE4311358C2 (de) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
JPH07240473A (ja) * 1994-03-01 1995-09-12 Fujitsu Ltd 半導体記憶装置およびその製造方法
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5892709A (en) * 1997-05-09 1999-04-06 Motorola, Inc. Single level gate nonvolatile memory device and method for accessing the same
JP4212178B2 (ja) * 1999-03-12 2009-01-21 株式会社東芝 半導体集積回路の製造方法
JP2002541669A (ja) * 1999-03-31 2002-12-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性メモリセルを有する半導体デバイス
JP2001185633A (ja) * 1999-12-15 2001-07-06 Texas Instr Inc <Ti> Ｅｅｐｒｏｍデバイス
JP4072300B2 (ja) 1999-12-22 2008-04-09 日本特殊陶業株式会社 セラミック積層構造の配線基板
JP4530464B2 (ja) * 2000-03-09 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics
US6788574B1 (en) * 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell
FR2838554B1 (fr) * 2002-04-15 2004-07-09 St Microelectronics Sa Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
CN1669155A (zh) 2002-05-09 2005-09-14 伊皮杰有限公司 伪非易失性直接隧穿浮栅器件
JP3957561B2 (ja) * 2002-05-24 2007-08-15 株式会社リコー 半導体装置
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030161192A1 (en) 2000-09-12 2003-08-28 Toshio Kobayashi Nonvolatile semiconductor memory device and methods for operating and producing the same
US20040155234A1 (en) 2002-12-26 2004-08-12 Renesas Technology Corp. Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
TWI424532B (zh) 2014-01-21
US7313026B2 (en) 2007-12-25
US20080056011A1 (en) 2008-03-06
TW200610101A (en) 2006-03-16
US20090154253A1 (en) 2009-06-18
US20060050566A1 (en) 2006-03-09
JP4881552B2 (ja) 2012-02-22
KR20060053161A (ko) 2006-05-19
US7466599B2 (en) 2008-12-16
JP2006080247A (ja) 2006-03-23

Similar Documents

Publication Publication Date Title
US7466599B2 (en) Semiconductor device
US8351255B2 (en) Semiconductor device
JP4800109B2 (ja) 半導体装置
US7050330B2 (en) Multi-state NROM device
US8344444B2 (en) Semiconductor device having a nonvolatile memory cell with a cap insulating film formed over a selection gate electrode
CN104752435A (zh) 半导体器件
JP2009016462A (ja) 半導体装置およびその製造方法
US20080211001A1 (en) Semiconductor device and a method of manufacturing the same
US20020060332A1 (en) Semiconductor integrated circuit device and manufacturing method thereof
JP2967346B2 (ja) 不揮発性メモリ装置の製造方法
US7655520B2 (en) Non-volatile memory having three states and method for manufacturing the same
KR20050030099A (ko) 불휘발성 반도체 기억 장치 및 그 제조 방법
US7291882B2 (en) Programmable and erasable digital switch device and fabrication method and operating method thereof
US7439133B2 (en) Memory structure and method of manufacturing a memory array
JPH11289021A (ja) 半導体集積回路装置およびその製造方法ならびにマイクロコンピュータ
JP5374546B2 (ja) 半導体装置
CN100438038C (zh) 非易失性存储器及其制造方法与操作方法
US8188536B2 (en) Memory device and manufacturing method and operating method thereof
JP2005340297A (ja) 半導体装置およびその製造方法
JPH01289170A (ja) 不揮発性半導体記憶装置
JP2011009640A (ja) 半導体集積回路装置
KR20070030711A (ko) 반도체장치
JP2006128375A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140825

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150819

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20160818

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170822

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190906

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240917

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240917