CN101847437B - 半导体存储器件的操作方法 - Google Patents

半导体存储器件的操作方法 Download PDF

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Publication number
CN101847437B
CN101847437B CN2010101130343A CN201010113034A CN101847437B CN 101847437 B CN101847437 B CN 101847437B CN 2010101130343 A CN2010101130343 A CN 2010101130343A CN 201010113034 A CN201010113034 A CN 201010113034A CN 101847437 B CN101847437 B CN 101847437B
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China
Prior art keywords
raceway groove
storage unit
semiconductor substrate
voltage
grid
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Expired - Lifetime
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CN2010101130343A
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English (en)
Chinese (zh)
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CN101847437A (zh
Inventor
久本大
安井感
石丸哲也
木村绅一郎
冈田大介
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN2010101130343A 2004-05-27 2005-05-27 半导体存储器件的操作方法 Expired - Lifetime CN101847437B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004157209 2004-05-27
JP157209/2004 2004-05-27
JP2005062063A JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置
JP062063/2005 2005-03-07

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200510074348A Division CN100595923C (zh) 2004-05-27 2005-05-27 集成半导体非易失性存储器的控制方法

Publications (2)

Publication Number Publication Date
CN101847437A CN101847437A (zh) 2010-09-29
CN101847437B true CN101847437B (zh) 2012-06-20

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CN2010101130343A Expired - Lifetime CN101847437B (zh) 2004-05-27 2005-05-27 半导体存储器件的操作方法

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US (5) US7212444B2 (enExample)
JP (1) JP4664707B2 (enExample)
KR (1) KR101064765B1 (enExample)
CN (1) CN101847437B (enExample)
TW (1) TWI390535B (enExample)

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JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN101652816B (zh) * 2007-04-05 2013-10-09 Nxp股份有限公司 存储器单元、存储器阵列和对存储器单元进行编程的方法
JP2008270343A (ja) * 2007-04-17 2008-11-06 Renesas Technology Corp 不揮発性半導体記憶装置
KR101401558B1 (ko) 2007-08-20 2014-06-09 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 및 소거 방법들,그리고 그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8565019B2 (en) * 2007-11-20 2013-10-22 Kabushiki Kaisha Toshiba Method for controlling threshold value in nonvolatile semiconductor memory device
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
JP5422886B2 (ja) * 2007-12-25 2014-02-19 凸版印刷株式会社 半導体装置
JP5365028B2 (ja) * 2008-03-03 2013-12-11 富士通セミコンダクター株式会社 半導体記憶装置
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
JP2010267341A (ja) * 2009-05-15 2010-11-25 Renesas Electronics Corp 半導体装置
JP5316299B2 (ja) * 2009-08-07 2013-10-16 富士通セミコンダクター株式会社 半導体メモリ、システムおよび半導体メモリの動作方法
JP2011076685A (ja) * 2009-10-01 2011-04-14 Fujitsu Semiconductor Ltd 不揮発性半導体記憶装置及びその書き込み方法
JP2011210969A (ja) 2010-03-30 2011-10-20 Renesas Electronics Corp 半導体装置およびその製造方法
KR101177215B1 (ko) 2010-10-26 2012-08-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
EP2498258B1 (en) * 2011-03-11 2016-01-13 eMemory Technology Inc. Non-volatile memory device with program current clamp and related method
US9894501B2 (en) * 2012-03-30 2018-02-13 Arris Enterprises Llc Handover of on-hold session between fixed packet network and cellular network
US9378821B1 (en) 2013-01-18 2016-06-28 Cypress Semiconductor Corporation Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
JP5596822B2 (ja) * 2013-06-18 2014-09-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN103700399A (zh) * 2014-01-07 2014-04-02 上海华虹宏力半导体制造有限公司 闪存及对应的编程方法、读取方法和擦除方法
WO2016133753A1 (en) * 2015-02-20 2016-08-25 Magna International Inc. Vehicle twist axle assembly
WO2016164229A1 (en) * 2015-04-09 2016-10-13 Silicon Storage Technology, Inc. System and method for programming split-gate, non-volatile memory cells
CN106158027B (zh) * 2015-04-09 2020-02-07 硅存储技术公司 用于对分离栅式非易失性存储器单元编程的系统和方法
JP2018049674A (ja) 2016-09-21 2018-03-29 ルネサスエレクトロニクス株式会社 半導体装置
TWI733626B (zh) * 2020-07-07 2021-07-11 旺宏電子股份有限公司 記憶體裝置之操作方法

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US5642312A (en) * 1988-06-08 1997-06-24 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache

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FR2770326B1 (fr) * 1997-10-28 2001-12-28 Sgs Thomson Microelectronics Procede d'ecriture dans une memoire non volatile modifiable electriquement
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JP2000251485A (ja) * 1999-02-26 2000-09-14 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
JP2002109890A (ja) * 2000-10-03 2002-04-12 Hitachi Ltd 不揮発性半導体メモリ
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
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JP2003346484A (ja) * 2002-05-23 2003-12-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2004023044A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 不揮発性半導体記憶装置
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JP2004071094A (ja) * 2002-08-08 2004-03-04 Renesas Technology Corp 不揮発性半導体記憶装置
JP4601287B2 (ja) 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
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JP4664707B2 (ja) * 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US5642312A (en) * 1988-06-08 1997-06-24 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache

Also Published As

Publication number Publication date
US20100232231A1 (en) 2010-09-16
US7212444B2 (en) 2007-05-01
US20050265080A1 (en) 2005-12-01
TW200620296A (en) 2006-06-16
US7751255B2 (en) 2010-07-06
CN101847437A (zh) 2010-09-29
US7443731B2 (en) 2008-10-28
JP4664707B2 (ja) 2011-04-06
US8472258B2 (en) 2013-06-25
US20070183206A1 (en) 2007-08-09
JP2006012382A (ja) 2006-01-12
KR20060046172A (ko) 2006-05-17
US8064261B2 (en) 2011-11-22
TWI390535B (zh) 2013-03-21
KR101064765B1 (ko) 2011-09-14
US20090014775A1 (en) 2009-01-15
US20120026798A1 (en) 2012-02-02

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Granted publication date: 20120620

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