TWI390535B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI390535B
TWI390535B TW094114586A TW94114586A TWI390535B TW I390535 B TWI390535 B TW I390535B TW 094114586 A TW094114586 A TW 094114586A TW 94114586 A TW94114586 A TW 94114586A TW I390535 B TWI390535 B TW I390535B
Authority
TW
Taiwan
Prior art keywords
gate
channel
field effect
effect transistor
semiconductor substrate
Prior art date
Application number
TW094114586A
Other languages
English (en)
Chinese (zh)
Other versions
TW200620296A (en
Inventor
Digh Hisamoto
Kan Yasui
Tetsuya Ishimaru
Shinichiro Kimura
Daiske Okada
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200620296A publication Critical patent/TW200620296A/zh
Application granted granted Critical
Publication of TWI390535B publication Critical patent/TWI390535B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
TW094114586A 2004-05-27 2005-05-05 半導體記憶裝置 TWI390535B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004157209 2004-05-27
JP2005062063A JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置

Publications (2)

Publication Number Publication Date
TW200620296A TW200620296A (en) 2006-06-16
TWI390535B true TWI390535B (zh) 2013-03-21

Family

ID=35425012

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094114586A TWI390535B (zh) 2004-05-27 2005-05-05 半導體記憶裝置

Country Status (5)

Country Link
US (5) US7212444B2 (enExample)
JP (1) JP4664707B2 (enExample)
KR (1) KR101064765B1 (enExample)
CN (1) CN101847437B (enExample)
TW (1) TWI390535B (enExample)

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JP4664707B2 (ja) 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5038741B2 (ja) * 2007-02-27 2012-10-03 ルネサスエレクトロニクス株式会社 不揮発性メモリ用電圧生成回路及び不揮発性メモリの書込み及び消去の方法
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN101652816B (zh) * 2007-04-05 2013-10-09 Nxp股份有限公司 存储器单元、存储器阵列和对存储器单元进行编程的方法
JP2008270343A (ja) * 2007-04-17 2008-11-06 Renesas Technology Corp 不揮発性半導体記憶装置
KR101401558B1 (ko) 2007-08-20 2014-06-09 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 및 소거 방법들,그리고 그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8565019B2 (en) * 2007-11-20 2013-10-22 Kabushiki Kaisha Toshiba Method for controlling threshold value in nonvolatile semiconductor memory device
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
JP5422886B2 (ja) * 2007-12-25 2014-02-19 凸版印刷株式会社 半導体装置
JP5365028B2 (ja) * 2008-03-03 2013-12-11 富士通セミコンダクター株式会社 半導体記憶装置
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
JP2010267341A (ja) * 2009-05-15 2010-11-25 Renesas Electronics Corp 半導体装置
JP5316299B2 (ja) * 2009-08-07 2013-10-16 富士通セミコンダクター株式会社 半導体メモリ、システムおよび半導体メモリの動作方法
JP2011076685A (ja) * 2009-10-01 2011-04-14 Fujitsu Semiconductor Ltd 不揮発性半導体記憶装置及びその書き込み方法
JP2011210969A (ja) 2010-03-30 2011-10-20 Renesas Electronics Corp 半導体装置およびその製造方法
KR101177215B1 (ko) 2010-10-26 2012-08-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
EP2498258B1 (en) * 2011-03-11 2016-01-13 eMemory Technology Inc. Non-volatile memory device with program current clamp and related method
US9894501B2 (en) * 2012-03-30 2018-02-13 Arris Enterprises Llc Handover of on-hold session between fixed packet network and cellular network
US9378821B1 (en) 2013-01-18 2016-06-28 Cypress Semiconductor Corporation Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
JP5596822B2 (ja) * 2013-06-18 2014-09-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN103700399A (zh) * 2014-01-07 2014-04-02 上海华虹宏力半导体制造有限公司 闪存及对应的编程方法、读取方法和擦除方法
WO2016133753A1 (en) * 2015-02-20 2016-08-25 Magna International Inc. Vehicle twist axle assembly
WO2016164229A1 (en) * 2015-04-09 2016-10-13 Silicon Storage Technology, Inc. System and method for programming split-gate, non-volatile memory cells
CN106158027B (zh) * 2015-04-09 2020-02-07 硅存储技术公司 用于对分离栅式非易失性存储器单元编程的系统和方法
JP2018049674A (ja) 2016-09-21 2018-03-29 ルネサスエレクトロニクス株式会社 半導体装置
TWI733626B (zh) * 2020-07-07 2021-07-11 旺宏電子股份有限公司 記憶體裝置之操作方法

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US5914896A (en) * 1996-08-01 1999-06-22 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices
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JPH1187658A (ja) 1997-09-05 1999-03-30 Mitsubishi Electric Corp メモリセルおよびそれを備える不揮発性半導体記憶装置
FR2770326B1 (fr) * 1997-10-28 2001-12-28 Sgs Thomson Microelectronics Procede d'ecriture dans une memoire non volatile modifiable electriquement
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JP2000251485A (ja) * 1999-02-26 2000-09-14 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
JP2002109890A (ja) * 2000-10-03 2002-04-12 Hitachi Ltd 不揮発性半導体メモリ
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
US6958940B2 (en) * 2002-02-28 2005-10-25 Renesas Technology Corp. Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array
JP2003346484A (ja) * 2002-05-23 2003-12-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2004023044A (ja) * 2002-06-20 2004-01-22 Toshiba Corp 不揮発性半導体記憶装置
US6894931B2 (en) 2002-06-20 2005-05-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP2004071094A (ja) * 2002-08-08 2004-03-04 Renesas Technology Corp 不揮発性半導体記憶装置
JP4601287B2 (ja) 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7035147B2 (en) * 2003-06-17 2006-04-25 Macronix International Co., Ltd. Overerase protection of memory cells for nonvolatile memory
US7187590B2 (en) * 2004-04-26 2007-03-06 Macronix International Co., Ltd. Method and system for self-convergent erase in charge trapping memory cells
US7313649B2 (en) * 2004-04-28 2007-12-25 Matsushita Electric Industrial Co., Ltd. Flash memory and program verify method for flash memory
JP4664707B2 (ja) * 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置

Also Published As

Publication number Publication date
US20100232231A1 (en) 2010-09-16
US7212444B2 (en) 2007-05-01
US20050265080A1 (en) 2005-12-01
TW200620296A (en) 2006-06-16
US7751255B2 (en) 2010-07-06
CN101847437A (zh) 2010-09-29
US7443731B2 (en) 2008-10-28
JP4664707B2 (ja) 2011-04-06
US8472258B2 (en) 2013-06-25
US20070183206A1 (en) 2007-08-09
JP2006012382A (ja) 2006-01-12
KR20060046172A (ko) 2006-05-17
CN101847437B (zh) 2012-06-20
US8064261B2 (en) 2011-11-22
KR101064765B1 (ko) 2011-09-14
US20090014775A1 (en) 2009-01-15
US20120026798A1 (en) 2012-02-02

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