JP4664707B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4664707B2
JP4664707B2 JP2005062063A JP2005062063A JP4664707B2 JP 4664707 B2 JP4664707 B2 JP 4664707B2 JP 2005062063 A JP2005062063 A JP 2005062063A JP 2005062063 A JP2005062063 A JP 2005062063A JP 4664707 B2 JP4664707 B2 JP 4664707B2
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JP
Japan
Prior art keywords
gate
channel
field effect
effect transistor
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005062063A
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English (en)
Japanese (ja)
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JP2006012382A5 (enExample
JP2006012382A (ja
Inventor
大 久本
感 安井
哲也 石丸
紳一郎 木村
大介 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2005062063A priority Critical patent/JP4664707B2/ja
Priority to TW094114586A priority patent/TWI390535B/zh
Priority to KR1020050043978A priority patent/KR101064765B1/ko
Priority to US11/137,518 priority patent/US7212444B2/en
Priority to CN200510074348A priority patent/CN100595923C/zh
Priority to CN2010101130343A priority patent/CN101847437B/zh
Publication of JP2006012382A publication Critical patent/JP2006012382A/ja
Priority to US11/727,592 priority patent/US7443731B2/en
Publication of JP2006012382A5 publication Critical patent/JP2006012382A5/ja
Priority to US12/233,670 priority patent/US7751255B2/en
Priority to US12/787,158 priority patent/US8064261B2/en
Application granted granted Critical
Publication of JP4664707B2 publication Critical patent/JP4664707B2/ja
Priority to US13/269,425 priority patent/US8472258B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2005062063A 2004-05-27 2005-03-07 半導体記憶装置 Expired - Lifetime JP4664707B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2005062063A JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置
TW094114586A TWI390535B (zh) 2004-05-27 2005-05-05 半導體記憶裝置
KR1020050043978A KR101064765B1 (ko) 2004-05-27 2005-05-25 반도체 기억 장치
US11/137,518 US7212444B2 (en) 2004-05-27 2005-05-26 Semiconductor nonvolatile memory device
CN2010101130343A CN101847437B (zh) 2004-05-27 2005-05-27 半导体存储器件的操作方法
CN200510074348A CN100595923C (zh) 2004-05-27 2005-05-27 集成半导体非易失性存储器的控制方法
US11/727,592 US7443731B2 (en) 2004-05-27 2007-03-27 Semiconductor nonvolatile memory device
US12/233,670 US7751255B2 (en) 2004-05-27 2008-09-19 Semiconductor nonvolatile memory device
US12/787,158 US8064261B2 (en) 2004-05-27 2010-05-25 Semiconductor nonvolatile memory device
US13/269,425 US8472258B2 (en) 2004-05-27 2011-10-07 Semiconductor nonvolatile memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004157209 2004-05-27
JP2005062063A JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008000095A Division JP2008153678A (ja) 2004-05-27 2008-01-04 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2006012382A JP2006012382A (ja) 2006-01-12
JP2006012382A5 JP2006012382A5 (enExample) 2008-02-21
JP4664707B2 true JP4664707B2 (ja) 2011-04-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005062063A Expired - Lifetime JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置

Country Status (5)

Country Link
US (5) US7212444B2 (enExample)
JP (1) JP4664707B2 (enExample)
KR (1) KR101064765B1 (enExample)
CN (1) CN101847437B (enExample)
TW (1) TWI390535B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147488B2 (en) 2016-09-21 2018-12-04 Renesas Electronics Corporation Semiconductor device

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JP4664707B2 (ja) 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5038741B2 (ja) * 2007-02-27 2012-10-03 ルネサスエレクトロニクス株式会社 不揮発性メモリ用電圧生成回路及び不揮発性メモリの書込み及び消去の方法
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN101652816B (zh) * 2007-04-05 2013-10-09 Nxp股份有限公司 存储器单元、存储器阵列和对存储器单元进行编程的方法
JP2008270343A (ja) * 2007-04-17 2008-11-06 Renesas Technology Corp 不揮発性半導体記憶装置
KR101401558B1 (ko) 2007-08-20 2014-06-09 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 및 소거 방법들,그리고 그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8565019B2 (en) * 2007-11-20 2013-10-22 Kabushiki Kaisha Toshiba Method for controlling threshold value in nonvolatile semiconductor memory device
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
JP5422886B2 (ja) * 2007-12-25 2014-02-19 凸版印刷株式会社 半導体装置
JP5365028B2 (ja) * 2008-03-03 2013-12-11 富士通セミコンダクター株式会社 半導体記憶装置
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
JP2010267341A (ja) * 2009-05-15 2010-11-25 Renesas Electronics Corp 半導体装置
JP5316299B2 (ja) * 2009-08-07 2013-10-16 富士通セミコンダクター株式会社 半導体メモリ、システムおよび半導体メモリの動作方法
JP2011076685A (ja) * 2009-10-01 2011-04-14 Fujitsu Semiconductor Ltd 不揮発性半導体記憶装置及びその書き込み方法
JP2011210969A (ja) 2010-03-30 2011-10-20 Renesas Electronics Corp 半導体装置およびその製造方法
KR101177215B1 (ko) 2010-10-26 2012-08-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
EP2498258B1 (en) * 2011-03-11 2016-01-13 eMemory Technology Inc. Non-volatile memory device with program current clamp and related method
US9894501B2 (en) * 2012-03-30 2018-02-13 Arris Enterprises Llc Handover of on-hold session between fixed packet network and cellular network
US9378821B1 (en) 2013-01-18 2016-06-28 Cypress Semiconductor Corporation Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
JP5596822B2 (ja) * 2013-06-18 2014-09-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN103700399A (zh) * 2014-01-07 2014-04-02 上海华虹宏力半导体制造有限公司 闪存及对应的编程方法、读取方法和擦除方法
WO2016133753A1 (en) * 2015-02-20 2016-08-25 Magna International Inc. Vehicle twist axle assembly
WO2016164229A1 (en) * 2015-04-09 2016-10-13 Silicon Storage Technology, Inc. System and method for programming split-gate, non-volatile memory cells
CN106158027B (zh) * 2015-04-09 2020-02-07 硅存储技术公司 用于对分离栅式非易失性存储器单元编程的系统和方法
TWI733626B (zh) * 2020-07-07 2021-07-11 旺宏電子股份有限公司 記憶體裝置之操作方法

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JP2000251485A (ja) * 1999-02-26 2000-09-14 Sony Corp 不揮発性半導体記憶装置およびそのデータ書き込み方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147488B2 (en) 2016-09-21 2018-12-04 Renesas Electronics Corporation Semiconductor device

Also Published As

Publication number Publication date
US20100232231A1 (en) 2010-09-16
US7212444B2 (en) 2007-05-01
US20050265080A1 (en) 2005-12-01
TW200620296A (en) 2006-06-16
US7751255B2 (en) 2010-07-06
CN101847437A (zh) 2010-09-29
US7443731B2 (en) 2008-10-28
US8472258B2 (en) 2013-06-25
US20070183206A1 (en) 2007-08-09
JP2006012382A (ja) 2006-01-12
KR20060046172A (ko) 2006-05-17
CN101847437B (zh) 2012-06-20
US8064261B2 (en) 2011-11-22
TWI390535B (zh) 2013-03-21
KR101064765B1 (ko) 2011-09-14
US20090014775A1 (en) 2009-01-15
US20120026798A1 (en) 2012-02-02

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