KR101064765B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR101064765B1
KR101064765B1 KR1020050043978A KR20050043978A KR101064765B1 KR 101064765 B1 KR101064765 B1 KR 101064765B1 KR 1020050043978 A KR1020050043978 A KR 1020050043978A KR 20050043978 A KR20050043978 A KR 20050043978A KR 101064765 B1 KR101064765 B1 KR 101064765B1
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KR
South Korea
Prior art keywords
gate
channel
semiconductor substrate
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020050043978A
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English (en)
Korean (ko)
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KR20060046172A (ko
Inventor
다이 히사모또
간 야스이
데쯔야 이시마루
신이찌로 기무라
다이스께 오까다
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20060046172A publication Critical patent/KR20060046172A/ko
Application granted granted Critical
Publication of KR101064765B1 publication Critical patent/KR101064765B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
KR1020050043978A 2004-05-27 2005-05-25 반도체 기억 장치 Expired - Lifetime KR101064765B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004157209 2004-05-27
JPJP-P-2004-00157209 2004-05-27
JP2005062063A JP4664707B2 (ja) 2004-05-27 2005-03-07 半導体記憶装置
JPJP-P-2005-00062063 2005-03-07

Publications (2)

Publication Number Publication Date
KR20060046172A KR20060046172A (ko) 2006-05-17
KR101064765B1 true KR101064765B1 (ko) 2011-09-14

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KR1020050043978A Expired - Lifetime KR101064765B1 (ko) 2004-05-27 2005-05-25 반도체 기억 장치

Country Status (5)

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US (5) US7212444B2 (enExample)
JP (1) JP4664707B2 (enExample)
KR (1) KR101064765B1 (enExample)
CN (1) CN101847437B (enExample)
TW (1) TWI390535B (enExample)

Cited By (1)

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KR20170134722A (ko) * 2015-04-09 2017-12-06 실리콘 스토리지 테크놀로지 인크 분리형 게이트, 비휘발성 메모리 셀들을 프로그래밍하기 위한 시스템 및 방법

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JP4664707B2 (ja) 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5038741B2 (ja) * 2007-02-27 2012-10-03 ルネサスエレクトロニクス株式会社 不揮発性メモリ用電圧生成回路及び不揮発性メモリの書込み及び消去の方法
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN101652816B (zh) * 2007-04-05 2013-10-09 Nxp股份有限公司 存储器单元、存储器阵列和对存储器单元进行编程的方法
JP2008270343A (ja) * 2007-04-17 2008-11-06 Renesas Technology Corp 不揮発性半導体記憶装置
KR101401558B1 (ko) 2007-08-20 2014-06-09 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 및 소거 방법들,그리고 그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8565019B2 (en) * 2007-11-20 2013-10-22 Kabushiki Kaisha Toshiba Method for controlling threshold value in nonvolatile semiconductor memory device
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
JP5422886B2 (ja) * 2007-12-25 2014-02-19 凸版印刷株式会社 半導体装置
JP5365028B2 (ja) * 2008-03-03 2013-12-11 富士通セミコンダクター株式会社 半導体記憶装置
JP2009301691A (ja) * 2008-06-17 2009-12-24 Renesas Technology Corp 不揮発性半導体記憶装置
JP2010267341A (ja) * 2009-05-15 2010-11-25 Renesas Electronics Corp 半導体装置
JP5316299B2 (ja) * 2009-08-07 2013-10-16 富士通セミコンダクター株式会社 半導体メモリ、システムおよび半導体メモリの動作方法
JP2011076685A (ja) * 2009-10-01 2011-04-14 Fujitsu Semiconductor Ltd 不揮発性半導体記憶装置及びその書き込み方法
JP2011210969A (ja) 2010-03-30 2011-10-20 Renesas Electronics Corp 半導体装置およびその製造方法
KR101177215B1 (ko) 2010-10-26 2012-08-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
EP2498258B1 (en) * 2011-03-11 2016-01-13 eMemory Technology Inc. Non-volatile memory device with program current clamp and related method
US9894501B2 (en) * 2012-03-30 2018-02-13 Arris Enterprises Llc Handover of on-hold session between fixed packet network and cellular network
US9378821B1 (en) 2013-01-18 2016-06-28 Cypress Semiconductor Corporation Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
JP5596822B2 (ja) * 2013-06-18 2014-09-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
CN103700399A (zh) * 2014-01-07 2014-04-02 上海华虹宏力半导体制造有限公司 闪存及对应的编程方法、读取方法和擦除方法
WO2016133753A1 (en) * 2015-02-20 2016-08-25 Magna International Inc. Vehicle twist axle assembly
WO2016164229A1 (en) * 2015-04-09 2016-10-13 Silicon Storage Technology, Inc. System and method for programming split-gate, non-volatile memory cells
JP2018049674A (ja) 2016-09-21 2018-03-29 ルネサスエレクトロニクス株式会社 半導体装置
TWI733626B (zh) * 2020-07-07 2021-07-11 旺宏電子股份有限公司 記憶體裝置之操作方法

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JP4601287B2 (ja) 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7035147B2 (en) * 2003-06-17 2006-04-25 Macronix International Co., Ltd. Overerase protection of memory cells for nonvolatile memory
US7187590B2 (en) * 2004-04-26 2007-03-06 Macronix International Co., Ltd. Method and system for self-convergent erase in charge trapping memory cells
US7313649B2 (en) * 2004-04-28 2007-12-25 Matsushita Electric Industrial Co., Ltd. Flash memory and program verify method for flash memory
JP4664707B2 (ja) * 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170134722A (ko) * 2015-04-09 2017-12-06 실리콘 스토리지 테크놀로지 인크 분리형 게이트, 비휘발성 메모리 셀들을 프로그래밍하기 위한 시스템 및 방법
KR102134505B1 (ko) * 2015-04-09 2020-07-15 실리콘 스토리지 테크놀로지 인크 분리형 게이트, 비휘발성 메모리 셀들을 프로그래밍하기 위한 시스템 및 방법

Also Published As

Publication number Publication date
US20100232231A1 (en) 2010-09-16
US7212444B2 (en) 2007-05-01
US20050265080A1 (en) 2005-12-01
TW200620296A (en) 2006-06-16
US7751255B2 (en) 2010-07-06
CN101847437A (zh) 2010-09-29
US7443731B2 (en) 2008-10-28
JP4664707B2 (ja) 2011-04-06
US8472258B2 (en) 2013-06-25
US20070183206A1 (en) 2007-08-09
JP2006012382A (ja) 2006-01-12
KR20060046172A (ko) 2006-05-17
CN101847437B (zh) 2012-06-20
US8064261B2 (en) 2011-11-22
TWI390535B (zh) 2013-03-21
US20090014775A1 (en) 2009-01-15
US20120026798A1 (en) 2012-02-02

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