JP2004221554A5 - - Google Patents

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Publication number
JP2004221554A5
JP2004221554A5 JP2003420916A JP2003420916A JP2004221554A5 JP 2004221554 A5 JP2004221554 A5 JP 2004221554A5 JP 2003420916 A JP2003420916 A JP 2003420916A JP 2003420916 A JP2003420916 A JP 2003420916A JP 2004221554 A5 JP2004221554 A5 JP 2004221554A5
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JP
Japan
Prior art keywords
semiconductor
conductor
potential
memory device
insulating film
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JP2003420916A
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English (en)
Japanese (ja)
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JP4601287B2 (ja
JP2004221554A (ja
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Priority to JP2003420916A priority Critical patent/JP4601287B2/ja
Priority claimed from JP2003420916A external-priority patent/JP4601287B2/ja
Priority to US10/743,783 priority patent/US6972997B2/en
Publication of JP2004221554A publication Critical patent/JP2004221554A/ja
Priority to US11/251,963 priority patent/US7130223B2/en
Publication of JP2004221554A5 publication Critical patent/JP2004221554A5/ja
Application granted granted Critical
Publication of JP4601287B2 publication Critical patent/JP4601287B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003420916A 2002-12-26 2003-12-18 不揮発性半導体記憶装置 Expired - Fee Related JP4601287B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003420916A JP4601287B2 (ja) 2002-12-26 2003-12-18 不揮発性半導体記憶装置
US10/743,783 US6972997B2 (en) 2002-12-26 2003-12-24 Nonvolatile semiconductor memory device
US11/251,963 US7130223B2 (en) 2002-12-26 2005-10-18 Nonvolatile semiconductor memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002375921 2002-12-26
JP2003420916A JP4601287B2 (ja) 2002-12-26 2003-12-18 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2004221554A JP2004221554A (ja) 2004-08-05
JP2004221554A5 true JP2004221554A5 (enExample) 2007-02-08
JP4601287B2 JP4601287B2 (ja) 2010-12-22

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JP2003420916A Expired - Fee Related JP4601287B2 (ja) 2002-12-26 2003-12-18 不揮発性半導体記憶装置

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US (2) US6972997B2 (enExample)
JP (1) JP4601287B2 (enExample)

Families Citing this family (75)

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US8492826B2 (en) 2007-10-09 2013-07-23 Genusion, Inc. Non-volatile semiconductor memory device and manufacturing method thereof
JP2009146497A (ja) * 2007-12-13 2009-07-02 Renesas Technology Corp 半導体装置
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US7843730B2 (en) * 2008-01-16 2010-11-30 Freescale Semiconductor, Inc. Non-volatile memory with reduced charge fluence
US8274829B2 (en) * 2008-06-09 2012-09-25 Aplus Flash Technology, Inc. Row-decoder and source-decoder structures suitable for erase in unit of page, sector and chip of a NOR-type flash operating below +/− 10V BVDS
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JP5300773B2 (ja) * 2010-03-29 2013-09-25 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
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CN111129017B (zh) * 2019-12-26 2022-06-07 华虹半导体(无锡)有限公司 Otp存储器及其制造方法
CN113013256B (zh) * 2021-02-04 2024-06-14 上海华力集成电路制造有限公司 分栅monos闪存及其制造方法
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