JP4601287B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP4601287B2
JP4601287B2 JP2003420916A JP2003420916A JP4601287B2 JP 4601287 B2 JP4601287 B2 JP 4601287B2 JP 2003420916 A JP2003420916 A JP 2003420916A JP 2003420916 A JP2003420916 A JP 2003420916A JP 4601287 B2 JP4601287 B2 JP 4601287B2
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Japan
Prior art keywords
line
memory
potential
semiconductor
memory cell
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003420916A
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English (en)
Japanese (ja)
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JP2004221554A5 (enExample
JP2004221554A (ja
Inventor
哲也 石丸
望 松崎
均 久米
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2003420916A priority Critical patent/JP4601287B2/ja
Priority to US10/743,783 priority patent/US6972997B2/en
Publication of JP2004221554A publication Critical patent/JP2004221554A/ja
Priority to US11/251,963 priority patent/US7130223B2/en
Publication of JP2004221554A5 publication Critical patent/JP2004221554A5/ja
Application granted granted Critical
Publication of JP4601287B2 publication Critical patent/JP4601287B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2003420916A 2002-12-26 2003-12-18 不揮発性半導体記憶装置 Expired - Fee Related JP4601287B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003420916A JP4601287B2 (ja) 2002-12-26 2003-12-18 不揮発性半導体記憶装置
US10/743,783 US6972997B2 (en) 2002-12-26 2003-12-24 Nonvolatile semiconductor memory device
US11/251,963 US7130223B2 (en) 2002-12-26 2005-10-18 Nonvolatile semiconductor memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002375921 2002-12-26
JP2003420916A JP4601287B2 (ja) 2002-12-26 2003-12-18 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2004221554A JP2004221554A (ja) 2004-08-05
JP2004221554A5 JP2004221554A5 (enExample) 2007-02-08
JP4601287B2 true JP4601287B2 (ja) 2010-12-22

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Family Applications (1)

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JP2003420916A Expired - Fee Related JP4601287B2 (ja) 2002-12-26 2003-12-18 不揮発性半導体記憶装置

Country Status (2)

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US (2) US6972997B2 (enExample)
JP (1) JP4601287B2 (enExample)

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JP4664707B2 (ja) 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
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JP5007017B2 (ja) * 2004-06-30 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JP5014591B2 (ja) * 2005-05-24 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
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Publication number Publication date
US20040155234A1 (en) 2004-08-12
US6972997B2 (en) 2005-12-06
US20060050557A1 (en) 2006-03-09
US7130223B2 (en) 2006-10-31
JP2004221554A (ja) 2004-08-05

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