CN101432820B - 用于擦除及程序化内存器件的方法 - Google Patents
用于擦除及程序化内存器件的方法 Download PDFInfo
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- CN101432820B CN101432820B CN2007800148670A CN200780014867A CN101432820B CN 101432820 B CN101432820 B CN 101432820B CN 2007800148670 A CN2007800148670 A CN 2007800148670A CN 200780014867 A CN200780014867 A CN 200780014867A CN 101432820 B CN101432820 B CN 101432820B
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 25
- 238000012163 sequencing technique Methods 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000006386 neutralization reaction Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000005641 tunneling Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
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- 230000000717 retained effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/399,130 US7394702B2 (en) | 2006-04-05 | 2006-04-05 | Methods for erasing and programming memory devices |
US11/399,130 | 2006-04-05 | ||
PCT/US2007/008683 WO2007114955A2 (en) | 2006-04-05 | 2007-04-05 | Methods for erasing and programming memory devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101432820A CN101432820A (zh) | 2009-05-13 |
CN101432820B true CN101432820B (zh) | 2012-11-28 |
Family
ID=38564154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800148670A Active CN101432820B (zh) | 2006-04-05 | 2007-04-05 | 用于擦除及程序化内存器件的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7394702B2 (zh) |
EP (1) | EP2005436A2 (zh) |
JP (1) | JP2009532911A (zh) |
KR (1) | KR101308692B1 (zh) |
CN (1) | CN101432820B (zh) |
TW (1) | TWI371101B (zh) |
WO (1) | WO2007114955A2 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI300931B (en) * | 2006-06-20 | 2008-09-11 | Macronix Int Co Ltd | Method of operating non-volatile memory device |
US20080023699A1 (en) * | 2006-07-26 | 2008-01-31 | Macronix International Co., Ltd. | A test structure and method for detecting charge effects during semiconductor processing |
US7596030B2 (en) * | 2006-08-01 | 2009-09-29 | Macronix International Co., Ltd. | Method for improving memory device cycling endurance by providing additional pulse |
US7916550B2 (en) * | 2006-11-17 | 2011-03-29 | Macronix International Co., Ltd. | Method and apparatus for operating nonvolatile memory with floating voltage at one of the source and drain regions |
US7652923B2 (en) * | 2007-02-02 | 2010-01-26 | Macronix International Co., Ltd. | Semiconductor device and memory and method of operating thereof |
JP2008227403A (ja) | 2007-03-15 | 2008-09-25 | Spansion Llc | 半導体装置およびその製造方法 |
JP5425378B2 (ja) * | 2007-07-30 | 2014-02-26 | スパンション エルエルシー | 半導体装置の製造方法 |
KR100877483B1 (ko) * | 2007-10-04 | 2009-01-07 | 주식회사 동부하이텍 | 플래시 메모리 소자 및 그 제조 방법 |
TWI442400B (zh) | 2010-02-22 | 2014-06-21 | Acer Inc | 記憶體元件之操作方法 |
US9368606B2 (en) | 2012-12-14 | 2016-06-14 | Cypress Semiconductor Corporation | Memory first process flow and device |
US20140167142A1 (en) | 2012-12-14 | 2014-06-19 | Spansion Llc | Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells |
US10014380B2 (en) | 2012-12-14 | 2018-07-03 | Cypress Semiconductor Corporation | Memory first process flow and device |
KR102293874B1 (ko) * | 2014-12-10 | 2021-08-25 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
TW439231B (en) * | 2000-01-11 | 2001-06-07 | Winbond Electronics Corp | Multi-level memory cell |
US6355514B1 (en) * | 2000-02-10 | 2002-03-12 | Advanced Micro Devices, Inc. | Dual bit isolation scheme for flash devices |
US6261904B1 (en) * | 2000-02-10 | 2001-07-17 | Advanced Micro Devices, Inc. | Dual bit isolation scheme for flash devices |
US6242306B1 (en) * | 2000-07-28 | 2001-06-05 | Advanced Micro Devices | Dual bit isolation scheme for flash memory devices having polysilicon floating gates |
US6538925B2 (en) | 2000-11-09 | 2003-03-25 | Innotech Corporation | Semiconductor memory device, method of manufacturing the same and method of driving the same |
US20030062567A1 (en) | 2001-09-28 | 2003-04-03 | Wei Zheng | Non volatile dielectric memory cell structure with high dielectric constant capacitive coupling layer |
EP1313149A1 (en) * | 2001-11-14 | 2003-05-21 | STMicroelectronics S.r.l. | Process for fabricating a dual charge storage location memory cell |
US6639271B1 (en) * | 2001-12-20 | 2003-10-28 | Advanced Micro Devices, Inc. | Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
US6914820B1 (en) * | 2002-05-06 | 2005-07-05 | Multi Level Memory Technology | Erasing storage nodes in a bi-directional nonvolatile memory cell |
US6735123B1 (en) * | 2002-06-07 | 2004-05-11 | Advanced Micro Devices, Inc. | High density dual bit flash memory cell with non planar structure |
US6906959B2 (en) * | 2002-11-27 | 2005-06-14 | Advanced Micro Devices, Inc. | Method and system for erasing a nitride memory device |
US6795342B1 (en) * | 2002-12-02 | 2004-09-21 | Advanced Micro Devices, Inc. | System for programming a non-volatile memory cell |
US6768160B1 (en) * | 2003-01-28 | 2004-07-27 | Advanced Micro Devices, Inc. | Non-volatile memory cell and method of programming for improved data retention |
US7184315B2 (en) * | 2003-11-04 | 2007-02-27 | Micron Technology, Inc. | NROM flash memory with self-aligned structural charge separation |
US7049651B2 (en) * | 2003-11-17 | 2006-05-23 | Infineon Technologies Ag | Charge-trapping memory device including high permittivity strips |
US6956254B2 (en) * | 2003-12-01 | 2005-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multilayered dual bit memory device with improved write/erase characteristics and method of manufacturing |
CN1677568A (zh) * | 2004-04-01 | 2005-10-05 | 上海宏力半导体制造有限公司 | 闪存的双位记忆胞结构 |
CN1719617A (zh) * | 2005-07-08 | 2006-01-11 | 北京大学 | 两端存储信息的双位闪存单元及其读取方法 |
-
2006
- 2006-04-05 US US11/399,130 patent/US7394702B2/en active Active
-
2007
- 2007-04-04 TW TW096111970A patent/TWI371101B/zh not_active IP Right Cessation
- 2007-04-05 JP JP2009504339A patent/JP2009532911A/ja active Pending
- 2007-04-05 EP EP07774953A patent/EP2005436A2/en not_active Withdrawn
- 2007-04-05 CN CN2007800148670A patent/CN101432820B/zh active Active
- 2007-04-05 WO PCT/US2007/008683 patent/WO2007114955A2/en active Application Filing
- 2007-04-05 KR KR1020087026872A patent/KR101308692B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2007114955A2 (en) | 2007-10-11 |
CN101432820A (zh) | 2009-05-13 |
US20070247923A1 (en) | 2007-10-25 |
KR20090006158A (ko) | 2009-01-14 |
JP2009532911A (ja) | 2009-09-10 |
EP2005436A2 (en) | 2008-12-24 |
KR101308692B1 (ko) | 2013-09-13 |
US7394702B2 (en) | 2008-07-01 |
WO2007114955A3 (en) | 2008-02-07 |
TW200746402A (en) | 2007-12-16 |
TWI371101B (en) | 2012-08-21 |
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Effective date of registration: 20160408 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
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TR01 | Transfer of patent right |
Effective date of registration: 20220624 Address after: California, USA Patentee after: Infineon Technology Co.,Ltd. Address before: California, USA Patentee before: CYPRESS SEMICONDUCTOR Corp. |
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