JP2006237593A5 - - Google Patents

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Publication number
JP2006237593A5
JP2006237593A5 JP2006020105A JP2006020105A JP2006237593A5 JP 2006237593 A5 JP2006237593 A5 JP 2006237593A5 JP 2006020105 A JP2006020105 A JP 2006020105A JP 2006020105 A JP2006020105 A JP 2006020105A JP 2006237593 A5 JP2006237593 A5 JP 2006237593A5
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JP
Japan
Prior art keywords
layer
semiconductor device
conductive layer
transistor
convex portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006020105A
Other languages
English (en)
Japanese (ja)
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JP2006237593A (ja
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Publication date
Application filed filed Critical
Priority to JP2006020105A priority Critical patent/JP2006237593A/ja
Priority claimed from JP2006020105A external-priority patent/JP2006237593A/ja
Publication of JP2006237593A publication Critical patent/JP2006237593A/ja
Publication of JP2006237593A5 publication Critical patent/JP2006237593A5/ja
Withdrawn legal-status Critical Current

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JP2006020105A 2005-01-31 2006-01-30 記憶装置および半導体装置 Withdrawn JP2006237593A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006020105A JP2006237593A (ja) 2005-01-31 2006-01-30 記憶装置および半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005024596 2005-01-31
JP2006020105A JP2006237593A (ja) 2005-01-31 2006-01-30 記憶装置および半導体装置

Publications (2)

Publication Number Publication Date
JP2006237593A JP2006237593A (ja) 2006-09-07
JP2006237593A5 true JP2006237593A5 (enExample) 2009-01-29

Family

ID=37044842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006020105A Withdrawn JP2006237593A (ja) 2005-01-31 2006-01-30 記憶装置および半導体装置

Country Status (1)

Country Link
JP (1) JP2006237593A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101165937A (zh) * 2006-10-18 2008-04-23 清华大学 有机复合物p-n结及其制备方法以及应用该p-n结的有机复合物二极管
EP2076924B1 (en) * 2006-11-17 2017-03-08 Semiconductor Energy Laboratory Co, Ltd. Unerasable memory element and method for manufacturing the same
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
JP2009016368A (ja) * 2007-06-29 2009-01-22 Ricoh Co Ltd メモリーデバイス
JP2010251630A (ja) * 2009-04-20 2010-11-04 Toppan Printing Co Ltd 情報記録素子及び情報記録装置並びにその製造方法
WO2011102233A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103165471A (zh) * 2013-02-19 2013-06-19 京东方科技集团股份有限公司 薄膜晶体管及其制作方法和显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442960A (ja) * 1990-06-06 1992-02-13 Matsushita Electron Corp 半導体集積回路のプログラマブル素子
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
DE10045192A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
JP2003068854A (ja) * 2001-08-23 2003-03-07 Seiko Epson Corp 配線間接続方法、配線間接続部材及びその製造方法
TWI233204B (en) * 2002-07-26 2005-05-21 Infineon Technologies Ag Nonvolatile memory element and associated production methods and memory element arrangements
JP4393859B2 (ja) * 2002-12-27 2010-01-06 株式会社半導体エネルギー研究所 記録媒体の作製方法

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