JP2006237593A - 記憶装置および半導体装置 - Google Patents

記憶装置および半導体装置 Download PDF

Info

Publication number
JP2006237593A
JP2006237593A JP2006020105A JP2006020105A JP2006237593A JP 2006237593 A JP2006237593 A JP 2006237593A JP 2006020105 A JP2006020105 A JP 2006020105A JP 2006020105 A JP2006020105 A JP 2006020105A JP 2006237593 A JP2006237593 A JP 2006237593A
Authority
JP
Japan
Prior art keywords
conductive layer
memory
semiconductor device
layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006020105A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006237593A5 (enExample
Inventor
Mikio Yugawa
幹央 湯川
Hiroko Abe
寛子 安部
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006020105A priority Critical patent/JP2006237593A/ja
Publication of JP2006237593A publication Critical patent/JP2006237593A/ja
Publication of JP2006237593A5 publication Critical patent/JP2006237593A5/ja
Withdrawn legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2006020105A 2005-01-31 2006-01-30 記憶装置および半導体装置 Withdrawn JP2006237593A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006020105A JP2006237593A (ja) 2005-01-31 2006-01-30 記憶装置および半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005024596 2005-01-31
JP2006020105A JP2006237593A (ja) 2005-01-31 2006-01-30 記憶装置および半導体装置

Publications (2)

Publication Number Publication Date
JP2006237593A true JP2006237593A (ja) 2006-09-07
JP2006237593A5 JP2006237593A5 (enExample) 2009-01-29

Family

ID=37044842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006020105A Withdrawn JP2006237593A (ja) 2005-01-31 2006-01-30 記憶装置および半導体装置

Country Status (1)

Country Link
JP (1) JP2006237593A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103717A (ja) * 2006-10-18 2008-05-01 Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi Ｐ―ｎ接合素子及びその製造方法、ｐ−ｎ接合素子を利用するトランジスタ
WO2008059940A1 (en) * 2006-11-17 2008-05-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and method for manufacturing the same, and semiconductor device
JP2009016368A (ja) * 2007-06-29 2009-01-22 Ricoh Co Ltd メモリーデバイス
JP2010251630A (ja) * 2009-04-20 2010-11-04 Toppan Printing Co Ltd 情報記録素子及び情報記録装置並びにその製造方法
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
US8451651B2 (en) 2010-02-19 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016507905A (ja) * 2013-02-19 2016-03-10 京東方科技集團股▲ふん▼有限公司 薄膜トランジスター及びその製作方法、表示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442960A (ja) * 1990-06-06 1992-02-13 Matsushita Electron Corp 半導体集積回路のプログラマブル素子
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
JP2003068854A (ja) * 2001-08-23 2003-03-07 Seiko Epson Corp 配線間接続方法、配線間接続部材及びその製造方法
WO2004017436A2 (de) * 2002-07-26 2004-02-26 Infineon Technologies Ag Nichtflüchtiges speicherelement sowie zugehörige herstellungsverfahren und speicherelementanordnungen
JP2004509458A (ja) * 2000-09-13 2004-03-25 シーメンス　アクチエンゲゼルシヤフト 有機データメモリ、有機データメモリによるｉｄタグ（ｒｆｉｄタグ）、および有機データメモリの使用法
JP2004220591A (ja) * 2002-12-27 2004-08-05 Semiconductor Energy Lab Co Ltd カード及び前記カードを用いた記帳システム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442960A (ja) * 1990-06-06 1992-02-13 Matsushita Electron Corp 半導体集積回路のプログラマブル素子
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
JP2004509458A (ja) * 2000-09-13 2004-03-25 シーメンス　アクチエンゲゼルシヤフト 有機データメモリ、有機データメモリによるｉｄタグ（ｒｆｉｄタグ）、および有機データメモリの使用法
JP2003068854A (ja) * 2001-08-23 2003-03-07 Seiko Epson Corp 配線間接続方法、配線間接続部材及びその製造方法
WO2004017436A2 (de) * 2002-07-26 2004-02-26 Infineon Technologies Ag Nichtflüchtiges speicherelement sowie zugehörige herstellungsverfahren und speicherelementanordnungen
JP2004220591A (ja) * 2002-12-27 2004-08-05 Semiconductor Energy Lab Co Ltd カード及び前記カードを用いた記帳システム

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103717A (ja) * 2006-10-18 2008-05-01 Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi Ｐ―ｎ接合素子及びその製造方法、ｐ−ｎ接合素子を利用するトランジスタ
WO2008059940A1 (en) * 2006-11-17 2008-05-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and method for manufacturing the same, and semiconductor device
JP2008182193A (ja) * 2006-11-17 2008-08-07 Semiconductor Energy Lab Co Ltd 記憶素子及びその作製方法、半導体装置
US8841642B2 (en) 2006-11-17 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Memory element and method for manufacturing the same, and semiconductor device
US8431997B2 (en) 2007-02-26 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device and method for manufacturing the same
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
US8753967B2 (en) 2007-02-26 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
JP2009016368A (ja) * 2007-06-29 2009-01-22 Ricoh Co Ltd メモリーデバイス
JP2010251630A (ja) * 2009-04-20 2010-11-04 Toppan Printing Co Ltd 情報記録素子及び情報記録装置並びにその製造方法
US8451651B2 (en) 2010-02-19 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2022145763A (ja) * 2010-02-19 2022-10-04 株式会社半導体エネルギー研究所 半導体装置
JP7293470B2 (ja) 2010-02-19 2023-06-19 株式会社半導体エネルギー研究所 半導体装置
JP2016507905A (ja) * 2013-02-19 2016-03-10 京東方科技集團股▲ふん▼有限公司 薄膜トランジスター及びその製作方法、表示装置

Similar Documents

Publication Publication Date Title
JP5521006B2 (ja) 半導体装置
JP6041961B2 (ja) 半導体装置および電子機器
US8295104B2 (en) Semiconductor device
EP1760798B1 (en) Semiconductor device and manufacturing method thereof
KR101371264B1 (ko) 기억 소자 및 반도체 장치
KR20080048423A (ko) 기억장치 및 반도체 장치
US7700984B2 (en) Semiconductor device including memory cell
KR101125174B1 (ko) 기억장치 및 반도체장치
JP5354884B2 (ja) 半導体装置の作製方法
JP5121183B2 (ja) 半導体装置及びその作製方法
US8288197B2 (en) Method for manufacturing a semiconductor device including a memory device comprising an insulator mixture region in a conductive layer
JP5046524B2 (ja) 記憶素子、記憶装置、及び電子機器
JP2006237593A (ja) 記憶装置および半導体装置
JP4912671B2 (ja) 半導体装置
JP5230119B2 (ja) 半導体装置及びその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081210

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110114

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111025

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20111107