JP2008103717A - P―n接合素子及びその製造方法、p−n接合素子を利用するトランジスタ - Google Patents
P―n接合素子及びその製造方法、p−n接合素子を利用するトランジスタ Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 89
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 41
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 39
- 229920000642 polymer Polymers 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 25
- 230000008878 coupling Effects 0.000 claims description 40
- 238000010168 coupling process Methods 0.000 claims description 40
- 238000005859 coupling reaction Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000003522 acrylic cement Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 15
- 239000002861 polymer material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000000498 ball milling Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000011837 pasties Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical group CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
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Abstract
【解決手段】本発明に係るP−N結合素子は、P型有機複合層と、N型有機複合層と、を備える。前記N型有機複合層は、第一ポリマー及び該第一ポリマーに混合される複数の導電粒子を含む。前記P型有機複合層は、第二ポリマー及び該第二ポリマーに混合される複数のカーボンナノチューブを含む。さらに、本発明は、P−N結合素子の製造方法も提供する。また、本発明は、P−N結合素子を利用する有機トランジスタを提供する。
【選択図】図1
Description
図1を参照すると、本実施例に係るP−N結合素子10は、N型有機複合層(伝導電子が多数キャリアである)12と、P型有機複合層(正孔が多数キャリアである)14と、を含む。前記N型有機複合層12は、第一ポリマー材料122と、該第一ポリマー材料122に均一に分布されている複数の導電粒子124と、を含む。前記P型有機複合層14は、第二ポリマー材料142と、該第二ポリマー材料142に均一に分布されている複数のカーボンナノチューブ144と、を含む。前記N型有機複合層12及び前記P型有機複合層14は、それぞれ厚さが数μm〜0.2mmにされる。前記第一ポリマー材料122及び前記第二ポリマー材料142としては、同じ材料でも異なる材料でも利用されることができる。前記第一ポリマー材料122及び前記第二ポリマー材料142は、ポリエチレン・グリコール、ポリエステル、シリカゲル、エポキシ樹脂、嫌気性接着剤、アクリル接着剤などのいずれか一種である。
図3を参照すると、本実施例に係るP−N結合素子20を利用する有機トランジスタ30は、陰極電極32と、陽極電極34と、該陰極電極32及び該陽極電極34の間に設置されたP−N結合素子20と、を含む。前記P−N結合素子20は、P型有機複合層24と、N型有機複合層22と、を含む。本実施例のP−N結合素子20は、実施例1のP−N結合素子10と同じであるが、前記P−N結合素子20の製造方法も、前記P−N結合素子10の製造方法と同じである。
12 N型有機複合層
122 第一ポリマー
124 導電粒子
14 P型有機複合層
142 第二ポリマー
144 カーボンナノチューブ
20 P−N結合素子
22 N型有機複合層
24 P型有機複合層
30 有機トランジスタ
32 陰極電極
34 陽極電極
Claims (9)
- P型有機複合層と、N型有機複合層と、を備えるP−N結合素子において、
前記N型有機複合層は、第一ポリマー及び該第一ポリマーに混合される複数の導電粒子を含み、
前記P型有機複合層は、第二ポリマー及び該第二ポリマーに混合される複数のカーボンナノチューブを含むことを特徴とするP−N結合素子。 - 前記N型有機複合層の第一ポリマー及び前記P型有機複合層の第二ポリマーは、同じ材料又は異なる材料からなることを特徴とする、請求項1に記載のP−N結合素子。
- 前記第一ポリマー及び前記第二ポリマーは、ポリエチレン・グリコール、ポリエステル、シリカゲル、エポキシ樹脂、嫌気性接着剤、アクリル接着剤のいずれか一種であることを特徴とする、請求項1に記載のP−N結合素子。
- 前記導電粒子は、酸化亜鉛であることを特徴とする、請求項1に記載のP−N結合素子。
- 前記導電粒子の含有量が30wt%〜50wt%であり、
前記カーボンナノチューブの含有量が0.01wt%〜30wt%であることを特徴とする、請求項1に記載のP−N結合素子。 - 基板を提供するステップと、
第二ポリマー及び複数のカーボンナノチューブを混合して前記基板に塗布して、P型有機複合層を形成するステップと、
第一ポリマー及び複数の導電粒子を混合して前記P型有機複合層に塗布して、N型有機複合層を形成するステップと、
前記基板を除去するステップと、
を含むことを特徴とするP−N結合素子の製造方法。 - 前記P型有機複合層を形成するステップにおいて、前記カーボンナノチューブを純化する工程を行うことを特徴とする、請求項6に記載のP−N結合素子の製造方法。
- 陰極電極と、陽極電極と、前記陰極電極及び前記陽極電極の間に設置されるP−N結合素子と、を含む有機トランジスタにおいて、
前記P−N結合素子は、P型有機複合層と、N型有機複合層と、を備え、
前記N型有機複合層は、第一ポリマー及び該第一ポリマーに混合される複数の導電粒子を含み、
前記P型有機複合層は、第二ポリマー及び該第二ポリマーに混合される複数のカーボンナノチューブを含むことを特徴とする有機トランジスタ。 - 前記陰極電極及び前記陽極電極は、導電金属である金からなることを特徴とする、請求項8に記載の有機トランジスタ。
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Application Number | Priority Date | Filing Date | Title |
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CNA2006100631907A CN101165937A (zh) | 2006-10-18 | 2006-10-18 | 有机复合物p-n结及其制备方法以及应用该p-n结的有机复合物二极管 |
CN200610063190.7 | 2006-10-18 |
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JP2008103717A true JP2008103717A (ja) | 2008-05-01 |
JP5184856B2 JP5184856B2 (ja) | 2013-04-17 |
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EP1808909A1 (de) * | 2006-01-11 | 2007-07-18 | Novaled AG | Elekrolumineszente Lichtemissionseinrichtung |
CN101626062B (zh) * | 2008-07-11 | 2011-05-04 | 清华大学 | 有机复合材料二极管 |
CN102064279B (zh) * | 2010-11-29 | 2012-10-31 | 黑龙江大学 | Pn结及制造方法并采用该pn结的二极管 |
CN102903849B (zh) * | 2011-07-29 | 2015-07-01 | 清华大学 | 肖特基二极管及其制备方法 |
CN104538541A (zh) * | 2014-11-26 | 2015-04-22 | 辽宁师范大学 | 新型碳纳米管基有机复合热电材料 |
CN104518078A (zh) * | 2014-11-26 | 2015-04-15 | 辽宁师范大学 | 导电聚合物复合热电材料 |
CN105336792B (zh) * | 2015-11-02 | 2019-03-01 | 京东方科技集团股份有限公司 | 碳纳米管半导体器件及其制备方法 |
CN105990525B (zh) * | 2016-04-29 | 2018-11-09 | 中国科学院物理研究所 | 一种太阳能电池及其制备方法 |
CN111653638A (zh) * | 2020-07-02 | 2020-09-11 | 河北大学 | 一种多交界面结太阳电池及其制备方法 |
CN113161472B (zh) * | 2021-03-22 | 2023-04-07 | 东莞理工学院 | 一种柔性有机热电复合薄膜、其制备方法及其应用 |
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JP5184856B2 (ja) | 2013-04-17 |
US20090032806A1 (en) | 2009-02-05 |
CN101165937A (zh) | 2008-04-23 |
US7858973B2 (en) | 2010-12-28 |
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