JP5184856B2 - P―n接合素子及びその製造方法、p−n接合素子を利用するダイオード - Google Patents
P―n接合素子及びその製造方法、p−n接合素子を利用するダイオード Download PDFInfo
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- 238000005859 coupling reaction Methods 0.000 claims description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 40
- 239000002041 carbon nanotube Substances 0.000 claims description 40
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- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 5
- 239000003522 acrylic cement Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 5
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- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920000728 polyester Polymers 0.000 claims description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
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- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
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- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical group CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- H—ELECTRICITY
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Description
図1を参照すると、本実施例に係るP−N結合素子10は、N型有機複合層(伝導電子が多数キャリアである)12と、P型有機複合層(正孔が多数キャリアである)14と、を含む。前記N型有機複合層12は、第一ポリマー材料122と、該第一ポリマー材料122に均一に分布されている複数の導電粒子124と、を含む。前記P型有機複合層14は、第二ポリマー材料142と、該第二ポリマー材料142に均一に分布されている複数のカーボンナノチューブ144と、を含む。前記N型有機複合層12及び前記P型有機複合層14は、それぞれ厚さが数μm〜0.2mmにされる。前記第一ポリマー材料122及び前記第二ポリマー材料142としては、同じ材料でも異なる材料でも利用されることができる。前記第一ポリマー材料122及び前記第二ポリマー材料142は、ポリエチレン・グリコール、ポリエステル、シリカゲル、エポキシ樹脂、嫌気性接着剤、アクリル接着剤などのいずれか一種である。
図3を参照すると、本実施例に係るP−N結合素子20を利用する有機ダイオード30は、陰極電極32と、陽極電極34と、該陰極電極32及び該陽極電極34の間に設置されたP−N結合素子20と、を含む。前記P−N結合素子20は、P型有機複合層24と、N型有機複合層22と、を含む。本実施例のP−N結合素子20は、実施例1のP−N結合素子10と同じであるが、前記P−N結合素子20の製造方法も、前記P−N結合素子10の製造方法と同じである。
12 N型有機複合層
122 第一ポリマー
124 導電粒子
14 P型有機複合層
142 第二ポリマー
144 カーボンナノチューブ
20 P−N結合素子
22 N型有機複合層
24 P型有機複合層
30 有機ダイオード
32 陰極電極
34 陽極電極
Claims (8)
- P型有機複合層と、N型有機複合層と、を備えるP−N結合素子において、
前記N型有機複合層は、第一ポリマー及び該第一ポリマーに混合される複数の導電粒子を含み、
前記P型有機複合層は、第二ポリマー及び該第二ポリマーに混合される複数のカーボンナノチューブを含み、
前記第一ポリマー及び前記第二ポリマーは、ポリエチレン・グリコール、ポリエステル、シリカゲル、エポキシ樹脂、嫌気性接着剤、アクリル接着剤のいずれか一種であることを特徴とするP−N結合素子。 - 前記N型有機複合層の第一ポリマー及び前記P型有機複合層の第二ポリマーは、同じ材料又は異なる材料からなることを特徴とする、請求項1に記載のP−N結合素子。
- 前記導電粒子は、酸化亜鉛であることを特徴とする、請求項1に記載のP−N結合素子。
- 前記導電粒子の含有量が30wt%〜50wt%であり、
前記カーボンナノチューブの含有量が0.01wt%〜30wt%であることを特徴とする、請求項1に記載のP−N結合素子。 - 基板を提供するステップと、
第二ポリマー及び複数のカーボンナノチューブを混合して前記基板に塗布して、P型有機複合層を形成するステップと、
第一ポリマー及び複数の導電粒子を混合して前記P型有機複合層に塗布して、N型有機複合層を形成するステップと、
前記基板を除去するステップと、
を含むP−N結合素子の製造方法であって、前記第一ポリマー及び前記第二ポリマーは、ポリエチレン・グリコール、ポリエステル、シリカゲル、エポキシ樹脂、嫌気性接着剤、アクリル接着剤のいずれか一種であることを特徴とするP−N結合素子の製造方法。 - 前記P型有機複合層を形成するステップにおいて、前記カーボンナノチューブを純化する工程を行うことを特徴とする、請求項5に記載のP−N結合素子の製造方法。
- 陰極電極と、陽極電極と、前記陰極電極及び前記陽極電極の間に設置されるP−N結合素子と、を含む有機ダイオードにおいて、
前記P−N結合素子は、P型有機複合層と、N型有機複合層と、を備え、
前記N型有機複合層は、第一ポリマー及び該第一ポリマーに混合される複数の導電粒子を含み、
前記P型有機複合層は、第二ポリマー及び該第二ポリマーに混合される複数のカーボンナノチューブを含み、
前記第一ポリマー及び前記第二ポリマーは、ポリエチレン・グリコール、ポリエステル、シリカゲル、エポキシ樹脂、嫌気性接着剤、アクリル接着剤のいずれか一種であることを特徴とする有機ダイオード。 - 前記陰極電極及び前記陽極電極は、導電金属である金からなることを特徴とする、請求項7に記載の有機ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2006100631907A CN101165937A (zh) | 2006-10-18 | 2006-10-18 | 有机复合物p-n结及其制备方法以及应用该p-n结的有机复合物二极管 |
CN200610063190.7 | 2006-10-18 |
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JP2008103717A JP2008103717A (ja) | 2008-05-01 |
JP5184856B2 true JP5184856B2 (ja) | 2013-04-17 |
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US (1) | US7858973B2 (ja) |
JP (1) | JP5184856B2 (ja) |
CN (1) | CN101165937A (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1808909A1 (de) * | 2006-01-11 | 2007-07-18 | Novaled AG | Elekrolumineszente Lichtemissionseinrichtung |
CN101626062B (zh) * | 2008-07-11 | 2011-05-04 | 清华大学 | 有机复合材料二极管 |
CN102064279B (zh) * | 2010-11-29 | 2012-10-31 | 黑龙江大学 | Pn结及制造方法并采用该pn结的二极管 |
CN102903849B (zh) * | 2011-07-29 | 2015-07-01 | 清华大学 | 肖特基二极管及其制备方法 |
CN104538541A (zh) * | 2014-11-26 | 2015-04-22 | 辽宁师范大学 | 新型碳纳米管基有机复合热电材料 |
CN104518078A (zh) * | 2014-11-26 | 2015-04-15 | 辽宁师范大学 | 导电聚合物复合热电材料 |
CN105336792B (zh) * | 2015-11-02 | 2019-03-01 | 京东方科技集团股份有限公司 | 碳纳米管半导体器件及其制备方法 |
CN105990525B (zh) * | 2016-04-29 | 2018-11-09 | 中国科学院物理研究所 | 一种太阳能电池及其制备方法 |
CN111653638A (zh) * | 2020-07-02 | 2020-09-11 | 河北大学 | 一种多交界面结太阳电池及其制备方法 |
CN113161472B (zh) * | 2021-03-22 | 2023-04-07 | 东莞理工学院 | 一种柔性有机热电复合薄膜、其制备方法及其应用 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001156321A (ja) * | 1999-03-09 | 2001-06-08 | Fuji Xerox Co Ltd | 半導体装置およびその製造方法 |
US6661029B1 (en) * | 2000-03-31 | 2003-12-09 | General Electric Company | Color tunable organic electroluminescent light source |
JP3936151B2 (ja) * | 2000-05-08 | 2007-06-27 | 双葉電子工業株式会社 | 有機el素子 |
EP1416069B1 (en) * | 2001-08-09 | 2010-10-27 | Asahi Kasei Kabushiki Kaisha | Organic semiconductor film and method for manufacture thereof |
JP3977669B2 (ja) * | 2002-03-07 | 2007-09-19 | 双葉電子工業株式会社 | 有機el素子 |
JP3636154B2 (ja) * | 2002-03-27 | 2005-04-06 | ソニー株式会社 | 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法 |
DE10219121A1 (de) * | 2002-04-29 | 2003-11-27 | Infineon Technologies Ag | Siliziumpartikel als Additive zur Verbesserung der Ladungsträgermobilität in organischen Halbleitern |
EP1388903B1 (en) | 2002-08-09 | 2016-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent device |
US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
US7910469B2 (en) * | 2002-09-25 | 2011-03-22 | Konica Minolta Holdings, Inc. | Electrical circuit, thin film transistor, method for manufacturing electric circuit and method for manufacturing thin film transistor |
JP4586334B2 (ja) * | 2003-05-07 | 2010-11-24 | ソニー株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP2007527107A (ja) * | 2003-06-11 | 2007-09-20 | ナノレッジ | 表面上に少なくとも一つの複合色素を有するチューブ状ナノ構造を少なくとも1種類備えた装置 |
US7655961B2 (en) * | 2003-10-02 | 2010-02-02 | Maxdem Incorporated | Organic diodes and materials |
JP2005150410A (ja) * | 2003-11-17 | 2005-06-09 | Japan Science & Technology Agency | 薄膜トランジスタ |
JP2005268550A (ja) * | 2004-03-18 | 2005-09-29 | Japan Science & Technology Agency | 有機半導体及びそれを用いた半導体装置並びにそれらの製造方法 |
JP2005294737A (ja) * | 2004-04-05 | 2005-10-20 | Asahi Kasei Corp | 縮合多環芳香族化合物薄膜の製造方法 |
JP4710251B2 (ja) * | 2004-05-28 | 2011-06-29 | 凸版印刷株式会社 | 金属酸化物膜の製造方法 |
JP4977968B2 (ja) * | 2004-06-15 | 2012-07-18 | 三菱化学株式会社 | 電子素子の製造方法 |
US7211824B2 (en) * | 2004-09-27 | 2007-05-01 | Nitto Denko Corporation | Organic semiconductor diode |
JP2006237593A (ja) * | 2005-01-31 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 記憶装置および半導体装置 |
JP2006265534A (ja) * | 2005-02-22 | 2006-10-05 | Toray Ind Inc | 重合体コンポジット |
JP4752283B2 (ja) * | 2005-02-24 | 2011-08-17 | 富士ゼロックス株式会社 | カーボンナノチューブを用いた太陽電池 |
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US7858973B2 (en) | 2010-12-28 |
US20090032806A1 (en) | 2009-02-05 |
CN101165937A (zh) | 2008-04-23 |
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