JP2006013480A5 - - Google Patents

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Publication number
JP2006013480A5
JP2006013480A5 JP2005154536A JP2005154536A JP2006013480A5 JP 2006013480 A5 JP2006013480 A5 JP 2006013480A5 JP 2005154536 A JP2005154536 A JP 2005154536A JP 2005154536 A JP2005154536 A JP 2005154536A JP 2006013480 A5 JP2006013480 A5 JP 2006013480A5
Authority
JP
Japan
Prior art keywords
conductive layer
insulating film
forming
insulating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005154536A
Other languages
English (en)
Japanese (ja)
Other versions
JP5089027B2 (ja
JP2006013480A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005154536A priority Critical patent/JP5089027B2/ja
Priority claimed from JP2005154536A external-priority patent/JP5089027B2/ja
Publication of JP2006013480A publication Critical patent/JP2006013480A/ja
Publication of JP2006013480A5 publication Critical patent/JP2006013480A5/ja
Application granted granted Critical
Publication of JP5089027B2 publication Critical patent/JP5089027B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005154536A 2004-05-28 2005-05-26 半導体装置 Expired - Fee Related JP5089027B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005154536A JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004159939 2004-05-28
JP2004159939 2004-05-28
JP2005154536A JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2006013480A JP2006013480A (ja) 2006-01-12
JP2006013480A5 true JP2006013480A5 (enExample) 2008-07-10
JP5089027B2 JP5089027B2 (ja) 2012-12-05

Family

ID=35780280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005154536A Expired - Fee Related JP5089027B2 (ja) 2004-05-28 2005-05-26 半導体装置

Country Status (1)

Country Link
JP (1) JP5089027B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007099689A1 (ja) * 2006-02-28 2007-09-07 Pioneer Corporation 有機トランジスタ及びその製造方法
WO2007099690A1 (ja) * 2006-02-28 2007-09-07 Pioneer Corporation 有機トランジスタ及びその製造方法
US7678701B2 (en) * 2006-07-31 2010-03-16 Eastman Kodak Company Flexible substrate with electronic devices formed thereon
JP5205894B2 (ja) * 2007-09-21 2013-06-05 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
JP5489429B2 (ja) * 2008-07-09 2014-05-14 富士フイルム株式会社 薄膜電界効果型トランジスタ
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
JP5886491B2 (ja) * 2010-11-12 2016-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102238180B1 (ko) 2014-08-05 2021-04-08 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조방법
WO2020049956A1 (ja) * 2018-09-03 2020-03-12 富士フイルム株式会社 有機薄膜トランジスタ、および、有機薄膜トランジスタの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018152B2 (ja) * 1976-04-23 1985-05-09 工業技術院長 太陽電池装置の作製方法
JP3047246B2 (ja) * 1990-09-26 2000-05-29 株式会社リコー Ｄｒａｍバッテリバックアップ方法
JP4094179B2 (ja) * 1998-08-21 2008-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3787839B2 (ja) * 2002-04-22 2006-06-21 セイコーエプソン株式会社 デバイスの製造方法、デバイス及び電子機器
JP4490650B2 (ja) * 2002-04-26 2010-06-30 東芝モバイルディスプレイ株式会社 Ｅｌ表示装置の駆動方法、およびｅｌ表示装置

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