JP2008135729A5 - - Google Patents
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- Publication number
- JP2008135729A5 JP2008135729A5 JP2007276352A JP2007276352A JP2008135729A5 JP 2008135729 A5 JP2008135729 A5 JP 2008135729A5 JP 2007276352 A JP2007276352 A JP 2007276352A JP 2007276352 A JP2007276352 A JP 2007276352A JP 2008135729 A5 JP2008135729 A5 JP 2008135729A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- conductive layer
- electrode
- voltage value
- level voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 230000006870 function Effects 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007276352A JP5214213B2 (ja) | 2006-10-24 | 2007-10-24 | 記憶装置の駆動方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006288788 | 2006-10-24 | ||
| JP2006288788 | 2006-10-24 | ||
| JP2007276352A JP5214213B2 (ja) | 2006-10-24 | 2007-10-24 | 記憶装置の駆動方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008135729A JP2008135729A (ja) | 2008-06-12 |
| JP2008135729A5 true JP2008135729A5 (enExample) | 2010-12-09 |
| JP5214213B2 JP5214213B2 (ja) | 2013-06-19 |
Family
ID=39560313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007276352A Expired - Fee Related JP5214213B2 (ja) | 2006-10-24 | 2007-10-24 | 記憶装置の駆動方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5214213B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5268192B2 (ja) * | 2009-02-26 | 2013-08-21 | 株式会社半導体エネルギー研究所 | Ｏｔｐメモリの検査方法、ｏｔｐメモリの作製方法、および半導体装置の作製方法 |
| WO2011152286A1 (en) * | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN110071136A (zh) * | 2018-01-21 | 2019-07-30 | 成都海存艾匹科技有限公司 | 三维纵向电编程存储器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745792A (ja) * | 1992-12-18 | 1995-02-14 | Texas Instr Inc <Ti> | アンチヒューズとそれをプログラムする方法 |
| JP3559580B2 (ja) * | 1993-12-17 | 2004-09-02 | 財団法人国際科学振興財団 | 半導体装置 |
| JP3682305B2 (ja) * | 1993-12-17 | 2005-08-10 | 財団法人国際科学振興財団 | 半導体装置の製造方法 |
| JPH07263647A (ja) * | 1994-02-04 | 1995-10-13 | Canon Inc | 電子回路装置 |
| JP3501416B2 (ja) * | 1994-04-28 | 2004-03-02 | 忠弘 大見 | 半導体装置 |
| JPH08139197A (ja) * | 1994-11-11 | 1996-05-31 | Tadahiro Omi | シリサイド反応を利用した半導体装置 |
| JPH1056066A (ja) * | 1996-08-08 | 1998-02-24 | Matsushita Electron Corp | アンチヒューズ素子およびその製造方法 |
| JP2000123592A (ja) * | 1998-10-19 | 2000-04-28 | Mitsubishi Electric Corp | 半導体装置 |
| JP4045245B2 (ja) * | 2004-02-12 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体装置 |
-
2007
- 2007-10-24 JP JP2007276352A patent/JP5214213B2/ja not_active Expired - Fee Related
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