JP2005293563A5 - - Google Patents

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Publication number
JP2005293563A5
JP2005293563A5 JP2005063588A JP2005063588A JP2005293563A5 JP 2005293563 A5 JP2005293563 A5 JP 2005293563A5 JP 2005063588 A JP2005063588 A JP 2005063588A JP 2005063588 A JP2005063588 A JP 2005063588A JP 2005293563 A5 JP2005293563 A5 JP 2005293563A5
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JP
Japan
Prior art keywords
circuit
memory
logic
demodulation
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005063588A
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English (en)
Japanese (ja)
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JP4652087B2 (ja
JP2005293563A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005063588A priority Critical patent/JP4652087B2/ja
Priority claimed from JP2005063588A external-priority patent/JP4652087B2/ja
Publication of JP2005293563A publication Critical patent/JP2005293563A/ja
Publication of JP2005293563A5 publication Critical patent/JP2005293563A5/ja
Application granted granted Critical
Publication of JP4652087B2 publication Critical patent/JP4652087B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005063588A 2004-03-11 2005-03-08 半導体装置 Expired - Fee Related JP4652087B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005063588A JP4652087B2 (ja) 2004-03-11 2005-03-08 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004068450 2004-03-11
JP2005063588A JP4652087B2 (ja) 2004-03-11 2005-03-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2005293563A JP2005293563A (ja) 2005-10-20
JP2005293563A5 true JP2005293563A5 (enExample) 2008-03-27
JP4652087B2 JP4652087B2 (ja) 2011-03-16

Family

ID=34975788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005063588A Expired - Fee Related JP4652087B2 (ja) 2004-03-11 2005-03-08 半導体装置

Country Status (5)

Country Link
US (1) US7675795B2 (enExample)
JP (1) JP4652087B2 (enExample)
KR (1) KR101098406B1 (enExample)
CN (1) CN1930580B (enExample)
WO (1) WO2005088532A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7699232B2 (en) * 2004-02-06 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7663473B2 (en) * 2004-02-12 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes
US20060255159A1 (en) * 2005-05-11 2006-11-16 Fec Co., Ltd.., And The Government Of Malaysia Power supply circuit in IC chip for non-contact IC card
US7675796B2 (en) 2005-12-27 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100764438B1 (ko) * 2006-07-18 2007-10-05 주식회사 하이닉스반도체 Ｒｆｉｄ 장치
US8463332B2 (en) * 2006-08-31 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Wireless communication device
KR100909801B1 (ko) * 2007-07-10 2009-07-29 주식회사 하이닉스반도체 Ｒｆｉｄ 태그 및 그의 동작 방법
KR100881823B1 (ko) * 2007-08-31 2009-02-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 포함하는 ｒｆｉｄ 장치
US20090088618A1 (en) 2007-10-01 2009-04-02 Arneson Michael R System and Method for Manufacturing a Swallowable Sensor Device
JP5106031B2 (ja) * 2007-10-12 2012-12-26 パナソニック株式会社 半導体記憶装置及びその製造方法並びに半導体スイッチング装置
JP2009163843A (ja) * 2008-01-09 2009-07-23 Panasonic Corp 半導体記憶装置及びその製造方法
KR100983700B1 (ko) * 2008-04-18 2010-09-24 주식회사 하이닉스반도체 Ｒｆｉｄ 장치
CN102160178B (zh) 2008-09-19 2013-06-19 株式会社半导体能源研究所 半导体器件
WO2010038601A1 (en) * 2008-09-30 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US7933138B2 (en) * 2009-01-30 2011-04-26 Texas Instruments Incorporated F-RAM device with current mirror sense amp
US9024761B2 (en) * 2009-03-17 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for persistent ID flag for RFID applications
JP2010231828A (ja) * 2009-03-26 2010-10-14 Elpida Memory Inc 半導体記憶装置
JP5524767B2 (ja) * 2009-09-02 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
CN102751244B (zh) * 2011-04-20 2014-03-12 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法、射频识别芯片及其形成方法
CN115867968A (zh) 2020-08-03 2023-03-28 株式会社半导体能源研究所 半导体装置的驱动方法
KR20230069128A (ko) 2020-09-22 2023-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법
KR20230071154A (ko) 2020-09-25 2023-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609453B1 (en) * 1992-06-25 2002-10-23 Denso Corporation Mobile object identification device
JP3607032B2 (ja) * 1996-06-03 2005-01-05 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ及びその駆動方法
JP4042182B2 (ja) * 1997-07-03 2008-02-06 セイコーエプソン株式会社 Ｉｃカードの製造方法及び薄膜集積回路装置の製造方法
JPH1173481A (ja) 1997-08-28 1999-03-16 Hitachi Ltd 非接触型ｉｃカード
JPH11120797A (ja) * 1997-10-15 1999-04-30 Toshiba Microelectronics Corp 強誘電体メモリ及びそのスクリーニング方法
JPH11297963A (ja) * 1998-04-10 1999-10-29 Toshiba Corp 電荷蓄積容量素子及びその製造方法、半導体記憶装置及びこれを用いたｉｄカード
JP2000035991A (ja) * 1998-05-11 2000-02-02 Sony Corp 履歴情報記録装置及びこれを備えた製品
JP2000020665A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
JP4231148B2 (ja) * 1998-12-04 2009-02-25 大日本印刷株式会社 携帯可能記憶媒体及びその発行方法
JP3614747B2 (ja) * 2000-03-07 2005-01-26 Ｎｅｃエレクトロニクス株式会社 昇圧回路、それを搭載したｉｃカード及びそれを搭載した電子機器
JP2003163331A (ja) * 2001-11-28 2003-06-06 Ricoh Co Ltd 不揮発性有機半導体記憶素子及びそれを有する非接触情報管理表示装置
JP3940014B2 (ja) * 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型ｉｃカード
JP2004056089A (ja) 2002-05-31 2004-02-19 Sharp Corp Ｉｃカード
US7699232B2 (en) * 2004-02-06 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7663473B2 (en) * 2004-02-12 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes

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