JP2017117509A5 - - Google Patents

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Publication number
JP2017117509A5
JP2017117509A5 JP2016246994A JP2016246994A JP2017117509A5 JP 2017117509 A5 JP2017117509 A5 JP 2017117509A5 JP 2016246994 A JP2016246994 A JP 2016246994A JP 2016246994 A JP2016246994 A JP 2016246994A JP 2017117509 A5 JP2017117509 A5 JP 2017117509A5
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JP
Japan
Prior art keywords
transistor
main electrode
memory cell
memorise
transistors
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Pending
Application number
JP2016246994A
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English (en)
Japanese (ja)
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JP2017117509A (ja
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Publication of JP2017117509A publication Critical patent/JP2017117509A/ja
Publication of JP2017117509A5 publication Critical patent/JP2017117509A5/ja
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JP2016246994A 2015-12-21 2016-12-20 メモリセル Pending JP2017117509A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15201495 2015-12-21
EP15201495.7 2015-12-21

Publications (2)

Publication Number Publication Date
JP2017117509A JP2017117509A (ja) 2017-06-29
JP2017117509A5 true JP2017117509A5 (enExample) 2019-12-12

Family

ID=54979498

Family Applications (1)

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JP2016246994A Pending JP2017117509A (ja) 2015-12-21 2016-12-20 メモリセル

Country Status (2)

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US (1) US9847109B2 (enExample)
JP (1) JP2017117509A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10937783B2 (en) 2016-11-29 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9966465B1 (en) * 2017-06-23 2018-05-08 United Microelectronics Corp. Non-volatile memory device
US10957373B2 (en) 2018-07-05 2021-03-23 Samsung Electronics Co., Ltd. Semiconductor memory device
US10839893B2 (en) * 2018-09-28 2020-11-17 Kneron (Taiwan) Co., Ltd. Memory cell with charge trap transistors and method thereof capable of storing data by trapping or detrapping charges
WO2021202575A1 (en) * 2020-03-31 2021-10-07 The Regents Of The University Of California Apparatus and method for changing the functionality of an integrated circuit using charge trap transistors
CN112349775B (zh) * 2020-09-16 2022-12-02 清华大学 超陡亚阈值摆幅器件及其制备方法
US12026605B2 (en) * 2020-12-03 2024-07-02 International Business Machines Corporation FeFET unit cells for neuromorphic computing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581501A (en) * 1995-08-17 1996-12-03 Altera Corporation Nonvolatile SRAM cells and cell arrays
US5648930A (en) * 1996-06-28 1997-07-15 Symbios Logic Inc. Non-volatile memory which is programmable from a power source
JP3378879B2 (ja) * 1997-12-10 2003-02-17 松下電器産業株式会社 不揮発性半導体記憶装置及びその駆動方法
US6002610A (en) * 1998-04-30 1999-12-14 Lucent Technologies Inc. Non-volatile memory element for programmable logic applications and operational methods therefor
JP4761646B2 (ja) * 2000-04-27 2011-08-31 株式会社半導体エネルギー研究所 不揮発性メモリ
US6577531B2 (en) * 2000-04-27 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
US7212438B2 (en) * 2005-02-25 2007-05-01 Infineon Technologies Ag Semiconductor device and method of operating a semiconductor device
US7301821B1 (en) * 2005-10-13 2007-11-27 Actel Corporation Volatile data storage in a non-volatile memory cell array
TW200812074A (en) * 2006-07-04 2008-03-01 Nxp Bv Non-volatile memory and-array
TWI466269B (zh) * 2006-07-14 2014-12-21 Semiconductor Energy Lab 非揮發性記憶體
JP5305620B2 (ja) * 2006-07-14 2013-10-02 株式会社半導体エネルギー研究所 不揮発性メモリ

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