JP2014086722A5 - - Google Patents

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Publication number
JP2014086722A5
JP2014086722A5 JP2013182777A JP2013182777A JP2014086722A5 JP 2014086722 A5 JP2014086722 A5 JP 2014086722A5 JP 2013182777 A JP2013182777 A JP 2013182777A JP 2013182777 A JP2013182777 A JP 2013182777A JP 2014086722 A5 JP2014086722 A5 JP 2014086722A5
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JP
Japan
Prior art keywords
cell
transistor
bit line
read
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013182777A
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English (en)
Japanese (ja)
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JP6069137B2 (ja
JP2014086722A (ja
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Priority to JP2013182777A priority Critical patent/JP6069137B2/ja
Priority claimed from JP2013182777A external-priority patent/JP6069137B2/ja
Publication of JP2014086722A publication Critical patent/JP2014086722A/ja
Publication of JP2014086722A5 publication Critical patent/JP2014086722A5/ja
Application granted granted Critical
Publication of JP6069137B2 publication Critical patent/JP6069137B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013182777A 2013-09-04 2013-09-04 不揮発性半導体記憶装置 Active JP6069137B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013182777A JP6069137B2 (ja) 2013-09-04 2013-09-04 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013182777A JP6069137B2 (ja) 2013-09-04 2013-09-04 不揮発性半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2012231439A Division JP5556873B2 (ja) 2012-10-19 2012-10-19 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2014086722A JP2014086722A (ja) 2014-05-12
JP2014086722A5 true JP2014086722A5 (enExample) 2016-01-21
JP6069137B2 JP6069137B2 (ja) 2017-02-01

Family

ID=50789458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013182777A Active JP6069137B2 (ja) 2013-09-04 2013-09-04 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JP6069137B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9524785B2 (en) * 2015-04-01 2016-12-20 Ememory Technology Inc. Memory unit with voltage passing device
JP6276447B1 (ja) * 2017-03-24 2018-02-07 株式会社フローディア 不揮発性半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196758A (ja) * 2005-01-14 2006-07-27 Renesas Technology Corp 半導体装置
JP4857682B2 (ja) * 2005-09-16 2012-01-18 セイコーエプソン株式会社 半導体集積回路装置及び電子機器
JP4901325B2 (ja) * 2006-06-22 2012-03-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5338680B2 (ja) * 2007-12-05 2013-11-13 凸版印刷株式会社 不揮発性半導体メモリ素子、および不揮発性半導体メモリ装置
JP5467809B2 (ja) * 2009-07-16 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2011123958A (ja) * 2009-12-11 2011-06-23 Renesas Electronics Corp 半導体装置

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