JP6069137B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP6069137B2
JP6069137B2 JP2013182777A JP2013182777A JP6069137B2 JP 6069137 B2 JP6069137 B2 JP 6069137B2 JP 2013182777 A JP2013182777 A JP 2013182777A JP 2013182777 A JP2013182777 A JP 2013182777A JP 6069137 B2 JP6069137 B2 JP 6069137B2
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cell
transistor
bit line
read
memory device
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Japanese (ja)
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JP2014086722A5 (enExample
JP2014086722A (ja
Inventor
谷口　泰弘
泰弘 谷口
秀男 葛西
秀男 葛西
裕 品川
裕 品川
奥山　幸祐
幸祐 奥山
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Floadia Corp
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Floadia Corp
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  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2013182777A 2013-09-04 2013-09-04 不揮発性半導体記憶装置 Active JP6069137B2 (ja)

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JP2013182777A JP6069137B2 (ja) 2013-09-04 2013-09-04 不揮発性半導体記憶装置

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JP2013182777A JP6069137B2 (ja) 2013-09-04 2013-09-04 不揮発性半導体記憶装置

Related Parent Applications (1)

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JP2012231439A Division JP5556873B2 (ja) 2012-10-19 2012-10-19 不揮発性半導体記憶装置

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JP2014086722A JP2014086722A (ja) 2014-05-12
JP2014086722A5 JP2014086722A5 (enExample) 2016-01-21
JP6069137B2 true JP6069137B2 (ja) 2017-02-01

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9524785B2 (en) * 2015-04-01 2016-12-20 Ememory Technology Inc. Memory unit with voltage passing device
JP6276447B1 (ja) * 2017-03-24 2018-02-07 株式会社フローディア 不揮発性半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196758A (ja) * 2005-01-14 2006-07-27 Renesas Technology Corp 半導体装置
JP4857682B2 (ja) * 2005-09-16 2012-01-18 セイコーエプソン株式会社 半導体集積回路装置及び電子機器
JP4901325B2 (ja) * 2006-06-22 2012-03-21 ルネサスエレクトロニクス株式会社 半導体装置
JP5338680B2 (ja) * 2007-12-05 2013-11-13 凸版印刷株式会社 不揮発性半導体メモリ素子、および不揮発性半導体メモリ装置
JP5467809B2 (ja) * 2009-07-16 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2011123958A (ja) * 2009-12-11 2011-06-23 Renesas Electronics Corp 半導体装置

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