JP2014038684A5 - - Google Patents
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- Publication number
- JP2014038684A5 JP2014038684A5 JP2013147153A JP2013147153A JP2014038684A5 JP 2014038684 A5 JP2014038684 A5 JP 2014038684A5 JP 2013147153 A JP2013147153 A JP 2013147153A JP 2013147153 A JP2013147153 A JP 2013147153A JP 2014038684 A5 JP2014038684 A5 JP 2014038684A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- drain
- source
- memory element
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013147153A JP6143590B2 (ja) | 2012-07-18 | 2013-07-15 | 記憶素子及びプログラマブルロジックデバイス |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012159449 | 2012-07-18 | ||
| JP2012159449 | 2012-07-18 | ||
| JP2013147153A JP6143590B2 (ja) | 2012-07-18 | 2013-07-15 | 記憶素子及びプログラマブルロジックデバイス |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017093215A Division JP6325149B2 (ja) | 2012-07-18 | 2017-05-09 | 記憶素子、及びプログラマブルロジックデバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014038684A JP2014038684A (ja) | 2014-02-27 |
| JP2014038684A5 true JP2014038684A5 (enExample) | 2016-08-25 |
| JP6143590B2 JP6143590B2 (ja) | 2017-06-07 |
Family
ID=49945804
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013147153A Expired - Fee Related JP6143590B2 (ja) | 2012-07-18 | 2013-07-15 | 記憶素子及びプログラマブルロジックデバイス |
| JP2017093215A Expired - Fee Related JP6325149B2 (ja) | 2012-07-18 | 2017-05-09 | 記憶素子、及びプログラマブルロジックデバイス |
| JP2018076041A Active JP6516897B2 (ja) | 2012-07-18 | 2018-04-11 | 半導体装置 |
| JP2019077487A Withdrawn JP2019153796A (ja) | 2012-07-18 | 2019-04-16 | 半導体装置 |
| JP2021014819A Withdrawn JP2021073724A (ja) | 2012-07-18 | 2021-02-02 | 半導体装置 |
| JP2022125349A Withdrawn JP2022159399A (ja) | 2012-07-18 | 2022-08-05 | 記憶素子 |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017093215A Expired - Fee Related JP6325149B2 (ja) | 2012-07-18 | 2017-05-09 | 記憶素子、及びプログラマブルロジックデバイス |
| JP2018076041A Active JP6516897B2 (ja) | 2012-07-18 | 2018-04-11 | 半導体装置 |
| JP2019077487A Withdrawn JP2019153796A (ja) | 2012-07-18 | 2019-04-16 | 半導体装置 |
| JP2021014819A Withdrawn JP2021073724A (ja) | 2012-07-18 | 2021-02-02 | 半導体装置 |
| JP2022125349A Withdrawn JP2022159399A (ja) | 2012-07-18 | 2022-08-05 | 記憶素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8934299B2 (enExample) |
| JP (6) | JP6143590B2 (enExample) |
| KR (6) | KR102107591B1 (enExample) |
| TW (2) | TWI608569B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011065258A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6333028B2 (ja) * | 2013-04-19 | 2018-05-30 | 株式会社半導体エネルギー研究所 | 記憶装置及び半導体装置 |
| JP6625328B2 (ja) * | 2014-03-06 | 2019-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| JP6677449B2 (ja) * | 2014-03-13 | 2020-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| US9401364B2 (en) * | 2014-09-19 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| US9281305B1 (en) * | 2014-12-05 | 2016-03-08 | National Applied Research Laboratories | Transistor device structure |
| US9953695B2 (en) | 2015-12-29 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and semiconductor wafer |
| US11114138B2 (en) | 2017-09-15 | 2021-09-07 | Groq, Inc. | Data structures with multiple read ports |
| US11243880B1 (en) | 2017-09-15 | 2022-02-08 | Groq, Inc. | Processor architecture |
| US11868804B1 (en) | 2019-11-18 | 2024-01-09 | Groq, Inc. | Processor instruction dispatch configuration |
| US11360934B1 (en) | 2017-09-15 | 2022-06-14 | Groq, Inc. | Tensor streaming processor architecture |
| US11170307B1 (en) | 2017-09-21 | 2021-11-09 | Groq, Inc. | Predictive model compiler for generating a statically scheduled binary with known resource constraints |
| US10754621B2 (en) * | 2018-08-30 | 2020-08-25 | Groq, Inc. | Tiled switch matrix data permutation circuit |
| US12340300B1 (en) | 2018-09-14 | 2025-06-24 | Groq, Inc. | Streaming processor architecture |
| US11204976B2 (en) | 2018-11-19 | 2021-12-21 | Groq, Inc. | Expanded kernel generation |
| TWI863940B (zh) * | 2019-01-25 | 2024-12-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及包括該半導體裝置的電子裝置 |
| US11908947B2 (en) | 2019-08-08 | 2024-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE112020004469T5 (de) | 2019-09-20 | 2022-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| CN114902414A (zh) | 2019-12-27 | 2022-08-12 | 株式会社半导体能源研究所 | 半导体装置 |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6196595A (ja) * | 1984-10-17 | 1986-05-15 | Toshiba Corp | 半導体記憶装置 |
| JPS62257698A (ja) * | 1986-04-30 | 1987-11-10 | Oki Electric Ind Co Ltd | 半導体スタテイツクメモリセル |
| JPH02218093A (ja) * | 1989-02-17 | 1990-08-30 | Nec Corp | メモリセル回路 |
| JPH06162764A (ja) * | 1992-11-17 | 1994-06-10 | Toshiba Corp | 半導体記憶装置 |
| JP4103968B2 (ja) | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
| JPH1131932A (ja) * | 1997-05-13 | 1999-02-02 | Nippon Steel Corp | メモリトランジスタを備えた半導体装置ならびに増幅回路及び増幅度可変方法ならびに記憶媒体 |
| JP2001202775A (ja) * | 2000-01-19 | 2001-07-27 | Ind Technol Res Inst | 再書き込み擬似ｓｒａｍ及びその再書き込み方法 |
| JP2005056452A (ja) * | 2003-08-04 | 2005-03-03 | Hitachi Ltd | メモリ及び半導体装置 |
| JP4418254B2 (ja) * | 2004-02-24 | 2010-02-17 | 株式会社ルネサステクノロジ | 半導体集積回路 |
| US7834827B2 (en) * | 2004-07-30 | 2010-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and driving method thereof |
| US7619916B2 (en) * | 2006-07-06 | 2009-11-17 | Stmicroelectronics Pvt. Ltd. | 8-T SRAM cell circuit, system and method for low leakage current |
| JP5179791B2 (ja) * | 2006-07-21 | 2013-04-10 | 株式会社Ｇｅｎｕｓｉｏｎ | 不揮発性半導体記憶装置、不揮発性半導体記憶装置の状態決定方法および半導体集積回路装置 |
| TWI585730B (zh) * | 2006-09-29 | 2017-06-01 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
| JP2009043804A (ja) * | 2007-08-07 | 2009-02-26 | Panasonic Corp | 半導体記憶装置、メモリ搭載ｌｓｉ、及び半導体記憶装置の製造方法 |
| KR101731772B1 (ko) * | 2008-11-28 | 2017-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 표시 장치를 포함하는 전자 장치 |
| JP5781720B2 (ja) | 2008-12-15 | 2015-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| KR102748818B1 (ko) * | 2009-10-29 | 2024-12-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| MY187143A (en) | 2010-01-20 | 2021-09-03 | Semiconductor Energy Lab | Semiconductor device |
| KR101926336B1 (ko) * | 2010-02-05 | 2019-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011099360A1 (en) * | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| WO2011114866A1 (en) | 2010-03-17 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| KR101891065B1 (ko) | 2010-03-19 | 2018-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치 구동 방법 |
| WO2011129233A1 (en) | 2010-04-16 | 2011-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011162147A1 (en) | 2010-06-23 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101859361B1 (ko) | 2010-07-16 | 2018-05-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9343480B2 (en) * | 2010-08-16 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5674594B2 (ja) * | 2010-08-27 | 2015-02-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
| US8829512B2 (en) * | 2010-12-28 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI621121B (zh) * | 2011-01-05 | 2018-04-11 | Semiconductor Energy Laboratory Co., Ltd. | 儲存元件、儲存裝置、及信號處理電路 |
| JP5337859B2 (ja) * | 2011-11-02 | 2013-11-06 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び液晶表示装置 |
| JP5288654B2 (ja) * | 2011-11-02 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| WO2013146039A1 (ja) * | 2012-03-30 | 2013-10-03 | シャープ株式会社 | 半導体記憶装置 |
| WO2013164958A1 (en) * | 2012-05-02 | 2013-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| US8952723B2 (en) * | 2013-02-13 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device and semiconductor device |
| TW201513128A (zh) * | 2013-07-05 | 2015-04-01 | Semiconductor Energy Lab | 半導體裝置 |
| US9378844B2 (en) * | 2013-07-31 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor whose gate is electrically connected to capacitor |
| US9401364B2 (en) * | 2014-09-19 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| US9424890B2 (en) * | 2014-12-01 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US9583177B2 (en) * | 2014-12-10 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device including memory device |
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2013
- 2013-07-03 KR KR1020130077925A patent/KR102107591B1/ko not_active Expired - Fee Related
- 2013-07-12 US US13/940,312 patent/US8934299B2/en active Active
- 2013-07-15 JP JP2013147153A patent/JP6143590B2/ja not_active Expired - Fee Related
- 2013-07-15 TW TW102125223A patent/TWI608569B/zh not_active IP Right Cessation
- 2013-07-15 TW TW106132988A patent/TWI638431B/zh not_active IP Right Cessation
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2015
- 2015-01-07 US US14/591,062 patent/US9985636B2/en not_active Expired - Fee Related
-
2017
- 2017-05-09 JP JP2017093215A patent/JP6325149B2/ja not_active Expired - Fee Related
-
2018
- 2018-04-11 JP JP2018076041A patent/JP6516897B2/ja active Active
-
2019
- 2019-04-16 JP JP2019077487A patent/JP2019153796A/ja not_active Withdrawn
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2020
- 2020-04-27 KR KR1020200050665A patent/KR102150574B1/ko active Active
- 2020-08-25 KR KR1020200107219A patent/KR102210818B1/ko active Active
-
2021
- 2021-01-26 KR KR1020210010749A patent/KR102368444B1/ko active Active
- 2021-02-02 JP JP2021014819A patent/JP2021073724A/ja not_active Withdrawn
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2022
- 2022-02-22 KR KR1020220022841A patent/KR102436903B1/ko active Active
- 2022-08-05 JP JP2022125349A patent/JP2022159399A/ja not_active Withdrawn
- 2022-08-22 KR KR1020220104765A patent/KR102556197B1/ko active Active