JP2012142066A5 - - Google Patents

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Publication number
JP2012142066A5
JP2012142066A5 JP2011275497A JP2011275497A JP2012142066A5 JP 2012142066 A5 JP2012142066 A5 JP 2012142066A5 JP 2011275497 A JP2011275497 A JP 2011275497A JP 2011275497 A JP2011275497 A JP 2011275497A JP 2012142066 A5 JP2012142066 A5 JP 2012142066A5
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JP
Japan
Prior art keywords
transistor
electrically connected
drain
source
bit line
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JP2011275497A
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English (en)
Japanese (ja)
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JP2012142066A (ja
JP5839976B2 (ja
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Priority to JP2011275497A priority Critical patent/JP5839976B2/ja
Priority claimed from JP2011275497A external-priority patent/JP5839976B2/ja
Publication of JP2012142066A publication Critical patent/JP2012142066A/ja
Publication of JP2012142066A5 publication Critical patent/JP2012142066A5/ja
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Publication of JP5839976B2 publication Critical patent/JP5839976B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011275497A 2010-12-17 2011-12-16 半導体装置 Expired - Fee Related JP5839976B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011275497A JP5839976B2 (ja) 2010-12-17 2011-12-16 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010281631 2010-12-17
JP2010281631 2010-12-17
JP2011275497A JP5839976B2 (ja) 2010-12-17 2011-12-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2012142066A JP2012142066A (ja) 2012-07-26
JP2012142066A5 true JP2012142066A5 (enExample) 2014-12-25
JP5839976B2 JP5839976B2 (ja) 2016-01-06

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Family Applications (1)

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JP2011275497A Expired - Fee Related JP5839976B2 (ja) 2010-12-17 2011-12-16 半導体装置

Country Status (4)

Country Link
US (1) US8686415B2 (enExample)
JP (1) JP5839976B2 (enExample)
KR (1) KR101883503B1 (enExample)
TW (1) TWI525622B (enExample)

Families Citing this family (14)

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US8593858B2 (en) * 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP6405097B2 (ja) 2013-02-28 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
KR20150128823A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9716100B2 (en) 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
JP6538426B2 (ja) * 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP6667267B2 (ja) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 半導体装置
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
WO2016092416A1 (en) * 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
KR20160117222A (ko) 2015-03-30 2016-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 검사 방법
US9589611B2 (en) 2015-04-01 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
JP6963463B2 (ja) 2016-11-10 2021-11-10 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器

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KR101803254B1 (ko) 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5407949B2 (ja) * 2010-03-11 2014-02-05 ソニー株式会社 不揮発性記憶装置及びデータ書き込み方法
WO2011145738A1 (en) * 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8593858B2 (en) * 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8520426B2 (en) * 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
KR101666551B1 (ko) * 2010-09-10 2016-10-25 삼성전자주식회사 전압 발생기, 그것을 포함하는 불휘발성 메모리 장치 및 그것의 전압 발생 방법

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